7MBR50SB-060 [ETC]
7 PIM IGBT ; 7 PIM IGBT\n
| 型号： | 7MBR50SB-060 |
| 厂家： | 
ETC |
| 描述： | 7 PIM IGBT
|
| 文件： | 总7页 (文件大小：595K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT Modules
7MBR50SB060
IGBT MODULE (S series)
600V / 50A / PIM
Features
· Low VCE(sat)
· Compact package
· P.C. board mount
· Converter diode bridge, Dynamic brake circuit
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Symbol
VCES
VGES
IC
Condition
Rating
600
Unit
V
Collector-Emitter voltage
Gate-Emitter voltage
V
±20
50
Continuous
1ms
A
Collector current
A
100
ICP
A
50
-IC
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
1 device
W
V
200
PC
600
VCES
VGES
IC
V
±20
Continuous
1ms
A
30
A
60
ICP
Collector power dissipation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
1 device
W
V
120
PC
600
VRRM
VRRM
IO
V
800
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
A
50
Surge current (Non-Repetitive)
A
350
IFSM
I2t
I2t
(Non-Repetitive)
A2s
°C
°C
V
613
+150
-40 to +125
AC 2500
AC 2500
3.5 *1
Operating junction temperature
Storage temperature
Tj
Tstg
AC : 1 minute
Isolation between terminal and copper base *2 Viso
voltage between thermistor and others *3
Mounting screw torque
V
N·m
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
should be connected together and shorted to copper base.
7MBR50SB060
IGBT Modules
Electrical characteristics (Tj=25°C unless otherwise specified)
Item
Symbol
Condition
Characteristics
Typ.
Unit
Min.
Max.
1.0
mA
µA
V
ICES
Zero gate voltage collector current
Gate-Emitter leakage current
VCE=600V, VGE=0V
VCE=0V, VGE=±20V
VCE=20V, IC=50mA
VGE=15V, Ic=50A chip
IGES
0.2
8.5
5.5
7.8
VGE(th)
VCE(sat)
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
1.8
V
1.95
terminal
2.4
5000
pF
µs
Cies
ton
tr
Input capacitance
Turn-on time
VGE=0V, VCE=10V, f=1MHz
VCC=300V
0.45
0.25
0.08
0.40
0.05
1.75
1.9
1.2
0.6
IC=50A
tr(i)
toff
tf
VGE=±15V
Turn-off
RG=51Ω
1.0
0.35
V
VF
Forward on voltage
IF=50A
chip
terminal
2.6
0.3
1.0
0.2
µs
mA
µA
V
trr
Reverse recovery time of FRD
Zero gate voltage collector current
Gate-Emitter leakage current
IF=50A
ICES
IGES
VCE(sat)
VCES=600V, VGE=0V
VCE=0V, VGE=±20V
IC=30A, VGE=15V chip
1.8
Collector-Emitter saturation voltage
1.95
0.45
0.25
0.40
0.05
terminal
2.4
1.2
0.6
1.0
0.35
1.0
µs
ton
tr
Turn-on time
Turn-off time
VCC=300V
IC=30A
toff
tf
VGE=±15V
RG=82Ω
VR=600V
IF=50A
mA
V
IRRM
VFM
Reverse current
1.1
1.2
Forward on voltage
chip
terminal
1.5
1.0
mA
IRRM
Reverse current
Resistance
VR=800V
T=25°C
5000
Ω
R
465
495
520
T=100°C
T=25/50°C
3305
3375
3450
K
B
B value
Thermal resistance Characteristics
Item
Symbol
Condition
Characteristics
Typ.
Unit
Min.
Max.
Inverter IGBT
Inverter FWD
Brake IGBT
0.63
1.33
Thermal resistance ( 1 device )
Rth(j-c)
Rth(c-f)
1.04 °C/W
0.90
Converter Diode
With thermal compound
Contact thermal resistance
*
0.05
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
[Thermistor]
[B rake]
[Inverter]
[Converter]
21(P)
22(P 1)
8
9
20(G u)
19(Eu)
18(G v)
17(Ev)
16(G w )
1(R)
2(S)
3(T)
15(Ew )
7(B)
4(U)
5(V)
6(W )
14(G b)
13(G x)
12(G y)
11(G z)
10(E n)
24(N 1)
23(N)
7MBR50SB060
IGBT Modules
Characteristics (Representative)
[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Tj= 125 oC (typ.)
Tj= 25 oC (typ.)
120
120
100
80
60
40
20
0
VGE= 20V
15V
15V
12V
12V
VGE= 20V
100
80
60
40
20
0
10V
10V
0
0
0
1
2
3
4
5
0
5
0
1
2
3
:
4
5
Collector - Emitter voltage
:
VCE [ V ]
Collector - Emitter voltage
VCE [ V ]
[ Inverter ]
[ Inverter ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25 oC (typ.)
120
100
80
60
40
20
0
10
8
Tj= 25oC
Tj= 125o
C
6
4
Ic=100A
2
Ic= 50A
Ic= 25A
0
1
2
3
4
10
15
20
25
Collector - Emitter voltage
:
VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
[ Inverter ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=50A, Tj= 25 oC
[ Inverter ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
20000
10000
500
400
300
200
100
0
25
20
15
10
5
Cies
1000
Coes
Cres
100
0
5
10
15
20
25
30
35
50
100 200
150
250
300
Collector - Emitter voltage
:
VCE [ V ]
Gate charge : Qg [ nC ]
7MBR50SB060
IGBT Modules
[ Inverter ]
[ Inverter ]
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=51Ω, Tj=25°C
Vcc=300V, VGE=±15V, Rg=51Ω, Tj=125°C
1000
100
10
1000
100
10
toff
ton
tr
toff
ton
tr
tf
tf
0
20
40
60
80
0
0
0
20
40
60
80
Collector current
:
Ic [ A ]
Collector current : Ic [ A ]
[ Inverter ]
Switching time vs. Gate resistance (typ.)
Vcc=300V, Ic=50A, VGE=±15V, Tj=25°C
[ Inverter ]
Switching loss vs. Collector current (typ.)
Vcc=300V, VGE=±15V, Rg=51Ω
5000
1000
5
4
3
2
1
0
ton
Eon(125 oC)
Eoff(125 oC)
toff
tr
Eon(25 oC)
Eoff(25 oC)
tf
100
Err(125 oC)
Err(25 oC)
80
10
10
50
100
Rg
500
20
40
60
100
Gate resistance
:
[
Ω ]
Collector current
:
Ic [ A ]
[ Inverter ]
[ Inverter ]
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area
+VGE=15V, -VGE<15V, Rg>51Ω, Tj<125°C
Vcc=300V, Ic=50A, VGE=±15V, Tj=125°C
=
=
=
10
8
120
100
80
60
40
20
0
Eon
6
Eoff
4
2
Err
0
10
50
100
Rg
500
200 600
400
800
Gate resistance
:
[
Ω ]
Collector - Emitter voltage : VCE [ V ]
IGBT Modules
7MBR50SB060
[ Inverter ]
Forward current vs. Forward on voltage (typ.)
[ Inverter ]
Reverse recovery characteristics (typ.)
Vcc=300V, VGE=±15V, Rg=51Ω
120
100
80
60
40
20
0
300
Tj=125 o
C
Tj=25 o
C
100
trr(125 oC)
trr(25 oC)
Irr(125 oC)
Irr(25 oC)
10
0
1
2
VF [ V ]
3
2.0
1
0
20
40
60
80
Forward on voltage
:
Forward current : IF [ A ]
[ Converter ]
Forward current vs. Forward on voltage (typ.)
120
100
80
60
40
20
0
Tj= 125 o
C
Tj= 25 o
C
0.0
0.4
0.8
1.2
: VFM [ V ]
1.6
Forward on voltage
[ Thermistor ]
Temperature characteristic (typ.)
Transient thermal resistance
5
1
200
100
FWD[Inverter]
IGBT[Brake]
Conv. Diode
IGBT[Inverter]
10
0.1
1
0.01
0.1
0.001
0.01
Pulse width
0.1
Pw [ sec ]
-60
-40
-20
0
20
40
60
80
oC ]
100 120 140 160 180
:
Temperature
[
7MBR50SB060
IGBT Modules
[ Brake ]
[ Brake ]
Collector current vs. Collector-Emitter voltage
Tj= 125 oC (typ.)
Collector current vs. Collector-Emitter voltage
Tj= 25 oC (typ.)
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
VGE= 20V 15V
12V
12V
15V
VGE= 20V
10V
10V
0
0
0
1
2
3
4
5
0
5
0
1
2
3
:
4
5
Collector - Emitter voltage
:
VCE [ V ]
Collector - Emitter voltage
VCE [ V ]
[ Brake ]
[ Brake ]
Collector current vs. Collector-Emitter voltage
VGE=15V (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj= 25 oC (typ.)
70
60
50
40
30
20
10
0
10
8
Tj= 25oC
Tj= 125o
C
6
4
Ic= 60A
2
Ic= 30A
Ic= 15A
0
1
2
3
4
10
15
20
25
Collector - Emitter voltage
:
VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
[ Brake ]
Dynamic Gate charge (typ.)
Vcc=300V, Ic=30A, Tj= 25 oC
[ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25 oC
10000
1000
100
500
400
300
200
100
0
25
20
15
10
5
Cies
Coes
Cres
0
5
10
15
20
25
30
35
50
100
Gate charge : Qg [ nC ]
150
200
Collector - Emitter voltage
:
VCE [ V ]
IGBT Modules
7MBR50SB060
Outline Drawings, mm
122±1
110±0.3
8-R2.25±0.3
4-ø5.5±0.3
94.5±0.3
19.05
13.09
3.81 4=15.24 11.5+0.5
15.24
19.05
15.24
0
21
20
19
18
17
16
15
14
10
3.81
99.6±0.3
3.81
1
2
3
4
5
6
A
A
4.055
14.995
15.24
15.24
15.24
15.24
15.24
22.86
1.15±0.2
ø2.5±0.1
ø0.4
ø2.1±0.1
Section A-A
Shows theory dimensions
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
相关型号：
7MBR50SB120-50
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-24
FUJI
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