7MBP150RTB060 [FUJI]
IPM-R3;
| 型号： | 7MBP150RTB060 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | IPM-R3 运动控制电子器件 信号电路 电动机控制 |
| 文件： | 总9页 (文件大小：785K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
7MBP150RTB060
IPM-R3 series
600V / 150A 7 in one-package
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Symbol
Rating
Max.
Unit
Item
Min.
V
DC
VDC
450
500
400
600
150
300
150
431
50
0
0
V
Bus voltage
Surge
VDC(surge)
V
(between terminal P and N)
Collector-Emitter voltage
Collector current
Shortoperating VSC
200
V
VCES *1
0
A
DC
IC
-
A
1ms
ICP
-IC
-
A
Duty=68.2%
*2
-
W
A
Collector power dissipation One transistor
PC *3
IC
-
Collector current
DC
-
A
1ms
ICP
100
50
-
A
Forward Current of Diode
IF
-
W
V
Collector power dissipation One transistor
Input voltage of power supply for Pre-Driver
Input signal voltage
PC *3
VCC *4
Vin *5
Iin
198
20
-
-0.5
V
Vcc+0.5
3
-0.5
mA
V
Input signal current
-
Alarm signal voltage
VALM *6
IALM *7
Tj
Vcc
20
-0.5
mA
°C
°C
°C
kV
N·m
N·m
Alarm signal current
-
-
Fig.1 Measurement of case temperature
Junction temperature
150
100
Operating case temperature
Storage temperature
Top
-20
Tstg
125
AC2.5
-40
Isolating voltage (Case-Terminal)
Viso *8
-
-
-
3.5 *9
3.5 *9
Screw torque
Mounting (M5)
Terminal (M5)
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB,
N and U or V or W or DB.
*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.47/(150 x 2.6)x100=68.2%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.29=431W [Inverter]
Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Break]
*4 : Vcc shall be applied to the input voltage between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*5 : Vin shall be applied to the input voltage between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*6 : VALM shall be spplied to the voltage between terminal No. 16 and 10.
*7 : IALM shall be applied to the input current to terminal No. 16.
*8 : 50Hz/60Hz sine wave 1 minute.
*9 : Recommendable Value : 2.5 to 3.0 N·m
Weight
Item
Symbol
Min.
Typ.
Max.
Unit
Weight
*9 : (For 1 device, Case is under the device)
Wt
-
450
-
g
7MBP150RTB060
IGBT-IPM
Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Item
Symbol
Condition
Min.
Typ.
Max.
1.0
2.3
-
Unit
mA
ICES
-
-
VCE=600V Vin terminal open.
Collector current at off signal input
Collector-Emitter saturation voltage
VCE(sat)
VF
-
-
V
Ic=150A
Terminal
Chip
-
1.8
-
-
2.6
-
V
Ic=150A
Terminal
Chip
Forward voltage of FWD
-
1.6
-
-
-
1.0
2.2
-
mA
V
VCE=600V Vin terminal open.
ICES
Collector current at off signal input
Collector-Emitter saturation voltage
-
Ic=50A
Terminal
Chip
VCE(sat)
-
1.75
-
-
-
3.3
-
V
V
-Ic=50A
Terminal
Chip
VF
Forward voltage of Diode
1.9
1.2
-
-
-
-
-
-
µs
ton
toff
trr
VDC=300V,Tj=125°C
Turn-on time
3.6
0.3
-
IC=150A Fig.1, Fig.6
Turn-off time
-
VDC=300V, IC=150A Fig.1, Fig.6
Internal wiring inductance=50nH
Main circuit wiring inductace=54nH
Reverse recovery time
Maximum Avalanche Energy
(A non-repetition)
170
mJ
PAV
Control circuit
Item
Symbol
Iccp
Condition
Min.
Typ.
Max. Unit
Switching Trequency : 0 to 15kHz
Tc=-20 to 125°C Fig.7
ON
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
mA
mA
V
-
-
-
-
18
65
ICCN
Vin(th)
1.00
1.25
1.35
1.70
1.95
OFF
V
1.60
8.0
VZ
Rin=20k ohm
Input zener voltage
V
-
-
-
-
tALM
Tc=-20°C Fig.2
Tc=25°C Fig.2
Tc=125°C Fig.2
Alarm signal hold time
ms
ms
ms
ohm
1.1
-
-
-
2.0
-
4.0
1575
RALM
Limiting resistor for alarm
1425
1500
Protection Section ( Vcc=15V)
Item
Symbol
Condition
Tj=125°C
Min.
225
75
-
Typ.
Max. Unit
Over Current Protection Level of Inverter circuit
Over Current Protection Level of brake circuit
Over Current Protection Delay time
SC Protection Delay time
IOC
-
-
-
A
Tj=125°C
-
A
tDOC
tSC
Tj=125°C
5
-
-
µs
µs
°C
°C
°C
Tj=125°C Fig.4
surface of IGBT chips
-
8
IGBT Chip Over Heating
TjOH
TjH
150
-
-
-
Over Heating Protection Hysteresis
Over Heating Protection Temperature Level
Over Heating Protection Hysteresis
Under Voltage Protection Level
Under Voltage Protection Hysteresis
20
-
-
125
-
TCOH
TCH
VUV
VH
VDC=0V, Ic=0A, Case temperature
110
-
20
-
11.0
0.2
12.5
V
0.5
-
Thermal characteristics( Tc=25°C)
Item
Symbol
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
Min.
Typ.
Max.
Unit
°C/W
°C/W
°C/W
°C/W
Junction to Case thermal resistance
-
-
-
0.29
0.47
0.63
-
INV
Brake
IGBT
FWD
IGBT
-
-
-
Case to fin thermal resistance with compound
-
0.05
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Item
Condition
Min.
Typ.
Max.
Unit
Common mode rectangular noise
Pulse width 1µs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2µs, Fall time 50µs
±2.0
-
-
kV
Common mode lightning surge
±5.0
-
-
kV
Interval 20s, 10 times
Judge : no over-current, no miss operating
Recommendable value
Item
DC Bus Voltage
Symbol
VDC
VCC
-
Min.
-
Typ.
Max.
400
Unit
V
-
15.0
-
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
13.5
2.5
16.5
3.0
V
Nm
7MBP150RTB060
IGBT-IPM
Vin
on
Vin(th)
Vin(th)
trr
90%
50%
Ic
90%
10%
toff
ton
Figure 1. Switching Time Waveform Definitions
off
off
/Vin
on
on
Gate on
Gate off
alarm
Vge (Inside IPM)
normal
Fault (Inside IPM)
/ALM
2ms(typ.)
tALM>Max.
tALM
tALM>Max.
Fault : Over-current, Over-heat or Under-voltage
Figure 2. Input / Output Timing Diagram
tsc
Ic
Ic
Ic
IALM
IALM
IALM
Figure. 4 Definition of tsc
P
Vcc
20k
Vin
IPM
L
DC
+
DC
300V
CT
15V
P
U
VccU
Ic
HCPL-
4504
20k
DC
VinU
N
GND
15V
Sw1
Sw2
AC200V
+
Figure 6. Switching Characteristics Test Circuit
GNDU
Vcc
V
20k
W
N
DC
VinX
Icc
Vcc
Vin
P
U
15V
4700p
Noise
GND
I PM
DC
15V
V
Earth
P.G
+8V fsw
W
Cooling
Fin
GND
N
Figure 5. Noise Test Circuit
Figure 7. Icc Test Circuit
7MBP150RTB060
IGBT-IPM
Block diagram
P
U
V
VccU
3
VinU
2
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
GNDU
VccV
1
6
VinV
5
GNDV
VccW
4
9
VinW
8
GNDW
7
W
Vcc 11
VinX 13
GND 10
VinY 14
VinZ 15
B
N
VinDB 12
Pre-driver include following functions
1 Amplifier for drive
2 Short circuit protection
3 Under voltage lockout circuit
4 Over current protection
5 IGBT chip over heating protection
RALM
Over heating protection
circuit
ALM 16
1.5kΩ
Outline drawings, mm
Mass : 450g
7MBP150RTB060
IGBT-IPM
Characteristics
Control circuit characteristics (Respresentative)
Power supply current vs. Switching frequency
N-side
Input signal threshold voltage
vs. Power supply voltage
Tj=25°C
Tj=125°C
Tc=125°C
·········
·········
P-side
2.5
2.0
1.5
1.0
0.5
0
70
60
50
40
30
20
10
0
0
5
10
15
20
25
12
13
14
15
16
17
18
Switching frequency fsw (kHz)
Power supply voltage Vcc (V)
Under voltage hysterisis vs. Junction temperature
Under voltage vs. Junction temperature
14
1.0
0.8
0.6
0.4
0.2
0
12
10
8
6
4
2
0
20
40
60
80
100
120
140
20
40
60
80
100
120
140
Junction temperature Tj (°C)
Junction temperature Tj (°C)
Alarm hold time vs. Power supply voltage
Overheating characteristics TCOH,TjOH,TCH,TjH vs. VCC
3.0
2.5
2.0
1.5
1.0
0.5
200
150
100
50
0
0
12
13
14
15
16
17
18
12
13
14
15
16
17
18
Power supply voltage Vcc (V)
Power supply voltage Vcc (V)
7MBP150RTB060
IGBT-IPM
Main circuit characteristics (Respresentative)
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Tj=25°C(Terminal)
Tj=25°C(Chip)
240
240
200
160
120
80
200
160
120
80
40
40
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
3.5
Collector-Emitter voltage VCE (V)
Collector-Emitter voltage VCE (V)
Collector current vs. Collector-Emitter voltage
Tj=125°C(Terminal)
Collector current vs. Collector-Emitter voltage
Tj=125°C(Chip)
240
200
160
120
80
240
200
160
120
80
40
40
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
1.5
2
2.5
3
3.5
Collector-Emitter voltage VCE (V)
Collector-Emitter voltage VCE (V)
Forward current vs. Forward voltage
(Chip)
Forward current vs. Forward voltage
(Terminal)
300
250
200
150
100
50
300
250
200
150
100
50
0
0
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
Foeward voltage VF (V)
Foeward voltage VF (V)
7MBP150RTB060
IGBT-IPM
Switching Loss vs. Collector current
Edc=300V, Vcc=15V, Tj=125°C
Switching Loss vs. Collector current
Edc=300V, Vcc=15V, Tj=25°C
25
20
15
10
5
16
14
12
10
8
6
4
2
0
0
0
60
120
180
240
0
60
120
180
240
Collector current IC (A)
Collector current IC (A)
Reverse biased safe operating area
Transient thermal resistance
<
Vcc=15V, Tj 125°C
=
400
300
200
100
1
0.1
0.01
0
0
100
200
300
400
500
600
700
0.001
0.01
0.1
1
Collector-Emitter voltage VCE (V)
Pulse width Pw (sec.)
Power derating for IGBT (per device)
Power derating for FWD (per device)
500
400
300
200
100
300
250
200
150
100
50
0
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Case temperature Tc (°C)
Case temperature Tc (°C)
7MBP150RTB060
IGBT-IPM
Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=125°C
Switching time vs. Collector current
Edc=300V, Vcc=15V, Tj=25°C
10000
1000
100
10000
1000
100
10
10
0
50
100
150
200
250
0
50
100
150
200
250
Collector current Ic (A)
Collector current Ic (A)
Reverse recovery characteristics
trr, Irr, vs. IF
100
10
1
0
50
100
150
200
250
Foeward current IF (A)
7MBP150RTB060
IGBT-IPM
Dynamic brake characteristics (Respresentative)
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Tj=125°C (Terminal)
Tj=25°C (Terminal)
80
80
60
40
20
0
60
40
20
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Collector-Emitter voltage VCE (V)
Collector-Emitter voltage VCE (V)
Reverse biased safe operating area
Transient thermal resistance
<
Vcc=15V, Tj 125°C
=
200
150
100
50
1
0.1
0.01
0
0
100
200
300
400
500
600
700
0.001
0.01
0.1
1
Collector-Emitter voltage VCE (V)
Pulse width Pw (sec.)
Power derating for IGBT (per device)
250
200
150
100
50
0
0
20
40
60
80
100
120
140
160
Case temperature Tc (°C)
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