概述
数据手册7MBP200VEA060-50 概述
IGBT MODULE (V series) 600V / 200A / IPM IGBT模块（ V系列） 600V / 200A / IPM
7MBP200VEA060-50 数据手册
通过下载7MBP200VEA060-50数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载http://www.fujielectric.com/products/semiconductor/
7MBP200VEA060-50
IGBT MODULE (V series)
600V / 200A / IPM
IGBT Modules
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (T =25ºC, VCC=15V unless otherwise specified)
C
Items
Symbol
Min.
Max.
Units
Collector-Emitter Voltage (*1)
Short Circuit Voltage
V
CES
SC
0
600
400
200
400
200
714
100
200
100
423
20
V
V
V
200
DC
I
I
C
-
A
Collector Current
1ms
cp
-
A
Duty=88.6% (*2)
-I
C
-
A
Collector Power Dissipation 1 device (*3)
PC
-
W
A
DC
I
I
I
C
-
Collector Current
1ms
cp
F
-
A
Forward Current of Diode
Collector Power Dissipation 1 device (*3)
Supply Voltage of Pre-Driver (*4)
Input Signal Voltage (*5)
-
-
A
P
V
V
V
C
W
V
CC
in
-0.5
-0.5
-0.5
-
V
CC+0.5
V
Alarm Signal Voltage (*6)
Alarm Signal Current (*7)
Junction Temperature
ALM
VCC
V
I
ALM
20
150
mA
ºC
ºC
ºC
ºC
Vrms
T
T
T
T
j
-
Operating Case Temperature
Storage Temperature
opr
stg
sol
-20
-40
-
110
125
Solder Temperature (*8)
260
Isolating Voltage (*9)
Viso
-
AC2500
Terminal (M5)
Screw Torque
-
-
3.5
Nm
Mounting (M5)
Note *1: VCES shall be applied to the input voltage between all Collector and Emitter. [ P1- (U, V, W ,B), P2- (U, V, W, B), (U ,V ,W ,B)-N1, (U, V, W, B)-N2 ]
Note *2: Duty=125ºC/Rth(j-c)D /(I ×V Max.)×100
Note *3: P =125ºC/Rth(j-c)Q (Inverter & Brake)
F
F
C
Note *4: VCC shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 14 and 13.
Note *5: Vin shall be applied to the input voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 15~18 and 13.
Note *6: VALM shall be applied to the voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 19 and 13.
Note *7: IALM shall be applied to the input current to terminal No.4, 8, 12 and 19.
Note *8: Immersion time 10±1 sec. 1 time.
Note *9: Terminal to base, 50/60Hz sine wave 1 min. All terminals should be connected together during the test.
1
7MBP200VEA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical Characteristics (T
j
=25ºC, VCC=15V unless otherwise specified)
Symbol Conditions
Items
Min.
Typ.
Max.
Units
Collector Current at off signal input
I
CES
V
CE=600V
-
-
1.0
1.80
-
mA
V
Terminal
Chip
-
-
Collector-Emitter saturation voltage (*10)
V
CE(sat)
I
I
C
=200A
-
1.25
V
Terminal
Chip
-
-
2.35
-
V
Forward voltage of FWD (*10)
V
F
F
=200A
-
1.80
V
Collector Current at off signal input
Collector-Emitter saturation voltage (*10)
I
CES
V
CE=600V
-
-
1.0
1.90
-
mA
V
Terminal
Chip
-
-
V
CE(sat)
I
I
C
=100A
-
1.45
V
Terminal
Chip
-
-
-
2.40
-
V
Forward voltage of FWD (*10)
Switching time
V
F
F
=100A
1.95
V
t
t
on
off
1.1
-
-
-
-
µs
µs
VDC=300V, T
j
=125ºC, I =200A
C
2.1
t
rr
VDC=300V, I
F
=200A
-
-
0.3
µs
Supply current of P-side pre-driver (per one unit)
Supply current of N-side pre-driver
I
I
ccp
ccn
-
-
-
-
26
92
1.6
1.9
-
mA
mA
V
Switching Frequency= 0-15kHz
=-20~110ºC
T
C
V
inth(on)
inth(off)
ON
1.2
1.5
300
150
-
1.4
1.7
-
Input signal threshold voltage
Vin-GND
V
OFF
V
Inverter
Brake
A
Over Current Protection
Level
I
OC
T
j
=125ºC
-
-
A
Over Current Protection Delay time
Short Circuit Protection Delay time
t
t
dOC
SC
T
T
j
j
=125ºC
=125ºC
5
-
µs
µs
ºC
ºC
V
-
2
3
IGBT Chips Over Heating Protection Temperature Level TjOH
Surface of IGBT Chips
150
-
-
-
Over Heating Protection Hysteresis
Under Voltage Protection Level
T
jH
20
-
-
V
UV
H
11.0
0.2
1.0
2.5
5.0
960
12.5
-
Under Voltage Protection Hysteresis
V
0.5
2.0
4.0
8.0
1265
V
t
t
t
ALM(OC)
ALM(UV)
ALM(TjOH)
2.4
4.9
11.0
1570
ms
ms
ms
Ω
ALM-GND
=-20~110ºC
Alarm Signal Hold Time
VCC 10V
T
C
Resistance for current limit
R
ALM
Note *10: The Max value is a case where it measures from P2- (U, V, W, B), (U, V, W, B)-N2.
Thermal Characteristics (T = 25ºC)
C
Items
Symbol
Min.
Typ.
Max.
Units
IGBT
FWD
IGBT
FWD
R
R
R
R
R
th(j-c)Q
th(j-c)D
th(j-c)Q
th(j-c)D
th(c-f)
-
-
-
-
-
-
0.175
0.300
0.295
0.645
-
°C/W
°C/W
°C/W
°C/W
°C/W
Inverter
Brake
-
Junction to Case Thermal Resistance (*11)
-
-
Case to Fin Thermal Resistance with Compound
0.05
Note *11: For 1device, the measurement point of the case is just under the chip.
Noise Immunity (VDC=300V, VCC=15V)
Items
Conditions
Min.
±2.0
Typ.
Max.
Units
Pulse width 1μs, polarity ±, 10 min.
Judge : no over-current, no miss operating
Common mode rectangular noise
-
-
kV
Recommended Operating Conditions
Items
Symbol
Min.
-
Typ.
Max.
Units
V
DC Bus Voltage
VDC
-
400
16.5
20
Power Supply Voltage of Pre-Driver
Switching frequency of IPM
VCC
13.5
-
15.0
V
f
t
SW
-
-
-
kHz
µs
Arm shoot through blocking time for IPM's input signal
Screw Torque (M5)
dead
1.0
2.5
-
-
3.5
Nm
Weight
Items
Symbol
Min.
Typ.
Max.
Units
Weight
Wt
-
980
-
g
2
7MBP200VEA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Block Diagram
CC
V
U
P1
P2
③
VinU
②
④
Pre-Driver
Pre-Driver
ALMU
RALM
RALM
RALM
GNDU
U
①
⑦
CC
V
V
VinV
⑥
⑧
ALM V
GNDV
V
⑤
⑪
CC
V
W
VinW
⑩
⑫
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
ALM W
W
GNDW
⑨
⑭
CC
V
VinX
GND
VinY
⑯
⑬
⑰
VinZ
⑱
B
VinDB
ALM
⑮
⑲
N1
N2
RALM
Pre-drivers include following functions
1. Amplifier for driver
2. Short circuit protection
3. Under voltage lockout circuit
4. Over current protection
5. IGBT chip over heating protection
3
7MBP200VEA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Power supply current vs. Switching frequency
Tj = 25 (typ.)
Input signal threshold voltage
vs. Power supply voltage (typ.)
℃
200
150
100
50
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Low-side
High-side
TC =25~125
℃
V
V
inth(off)
inth(on)
VCC =17V
V
V
CC =15V
CC =13V
VCC =17V
V
V
CC =15V
CC =13V
0
0
5
10
15
20
25
12
13
14
15
16
17
18
Switchig frequency : fsw [ kHz ]
Power supply voltage : VCC [ V ]
Under voltage hysterisis
Under voltage vs. Junction temperature (typ.)
vs. Junction temperature (typ.)
1
15
12
9
0.8
0.6
0.4
0.2
0
6
3
0
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
Junction temperature : T
j
[
]
℃
Junction temperature : T
j
[
]
℃
Alarm hold time vs. Power supply voltage (typ.)
Over heating characteristics
jOH , TjH vs. VCC (typ.)
T
10
8
200
150
100
50
T
jOH
t
ALM(TjOH)
6
4
t
ALM(OC)
2
T
jH
0
0
12
13
14
15
16
17
18
12
13
14
15
16
17
18
Power supply voltage : VCC [ V ]
Power supply voltage : VCC [ V ]
4
7MBP200VEA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Inverter
Collector current vs. Collector-Emitter voltage
=25 [Chip] (typ.)
Collector current vs. Collector-Emitter voltage
T
j
℃
j
T =25℃ [Terminal] (typ.)
400
300
200
100
0
400
300
200
100
0
V
CC =15V
CC =17V
V
V
CC =15V
V
CC =17V
V
CC =13V
V
CC =13V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage
=125 [Chip] (typ.)
Collector current vs. Collector-Emitter voltage
=125 [Terminal] (typ.)
T
j
℃
T
j
℃
400
300
200
100
0
400
300
200
100
0
V
CC =15V
V
CC =15V
V
CC =17V
V
CC =17V
V
CC =13V
V
CC =13V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
Forward current vs. Forward voltage
[Chip] (typ.)
Forward current vs. Forward voltage
[Terminal] (typ.)
400
300
200
100
0
400
300
200
100
0
j
T =125℃
j
T =125℃
j
T =25℃
Tj =25℃
0.0
0.5
1.0
1.5
2.0
2.5
[ V ]
3.0
3.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Forward voltage : V
F
Forward voltage : V
F
[ V ]
5
7MBP200VEA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching Loss vs. Collector Current (typ.)
DC=300V, VCC=15V, T =25
Switching Loss vs. Collector Current (typ.)
V
j
℃
V
DC=300V, VCC=15V, T
j
=125
℃
20
15
10
5
20
15
10
5
E
E
on
off
E
E
on
off
E
rr
E
rr
0
0
0
0
0
100
200
Collector current : I
300
[ A ]
400
800
150
0
100
200
300
400
C
Collector current : I [ A ]
C
Reversed biased safe operating area
CC=15V, T 125 [Main Terminal] (min.)
Transient thermal resistance (max.)
V
j
≦
℃
600
500
400
300
200
100
0
10
1
FWD
IGBT
0.1
RBSOA
(Repetitive pulse)
0.01
200
400
600
0.001
0.01
0.1
1
10
Collector-Emitter voltage : VCE [ V ]
Pulse width : P [ sec ]
W
Power derating for IGBT (max.)
[per device]
Power derating for FWD (max.)
[per device]
600
400
200
0
800
600
400
200
0
0
50
100
150
50
100
Case Temperature : T
C
[
]
℃
Case Temperature : T
C
[
]
℃
6
7MBP200VEA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
DC=300V, VCC=15V ,T =25
Switching time vs. Collector current (typ.)
V
j
℃
VDC =300V, VCC=15V, T
j
=125
℃
10000
1000
100
10000
1000
100
t
t
on
off
t
t
on
off
t
f
t
f
10
10
0
100
200
Collector current : I
300
[ A ]
400
0
100
200
300
400
C
Collector current : I [ A ]
C
Reverse recovery characteristics (typ.)
Over current protection vs. Junction temperature (typ.)
t
rr, Irr vs. I
f
VCC =15V
1000
100
10
1000
800
600
400
200
0
t
rr
T
j
=125℃
t
I
rr
rr
T
T
j
j
=25℃
=125
I
rr
Tj=25℃
1
0
100
200
Forward current : I
300
[ A ]
400
0
20
40
60
80
100
120
140
F
Junction temperature : T
j
[
]
℃
7
7MBP200VEA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Brake
Collector current vs. Collector-Emitter voltage
=25 [Chip] (typ.)
Collector current vs. Collector-Emitter voltage
T
j
℃
j
T =25℃ [Terminal] (typ.)
200
150
100
50
200
150
100
50
V
CC =15V
V
CC =15V
V
CC =13V
V
CC =13V
VCC =17V
V
CC =17V
0
0
0.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
3.5
3.5
0.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
3.5
3.5
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage
=125 [Chip] (typ.)
Collector current vs. Collector-Emitter voltage
T
j
℃
T
j
=125
℃ [Terminal] (typ.)
200
150
100
50
200
150
100
50
V
CC =15V
VCC =13V
V
CC =15V
V
CC =17V
VCC =13V
V
CC =17V
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0.5
1.0
1.5
2.0
2.5
3.0
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage : VCE [ V ]
Forward current vs. Forward voltage
[Chip] (typ.)
Forward current vs. Forward voltage
[Terminal] (typ.)
200
150
100
50
200
150
100
50
T
j
=125
℃
T =125℃
j
T =25℃
j
j
T =25℃
0
0
0.5
1.0
1.5
2.0
2.5
[ V ]
3.0
0.5
1.0
1.5
2.0
2.5
[ V ]
3.0
Forward voltage : V
F
Forward voltage : V
F
8
7MBP200VEA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching Loss vs. Collector Current (typ.)
DC =300V, VCC =15V
Reversed biased safe operating area
V
V
CC =15V, T
j
≦
125
℃
[Main Terminal] (min.)
8
6
4
2
0
600
500
400
300
200
100
0
T =125℃
j
j
T =25℃
RBSOA
(Repetitive pulse)
0
50
100
Collector current : I
150
[ A ]
200
150
10
0
100
200 300
400
500
600 700
800
C
Collector-Emitter voltage : VCE [ V ]
Power derating for IGBT (max.)
[per device]
Power derating for FWD (max.)
[per device]
800
400
300
200
100
0
600
400
200
0
0
50
100
0
50
100
150
Case Temperature : T
C
[
]
Case Temperature : T
C
[
]
℃
℃
Transient thermal resistance (max.)
10
1
FWD
IGBT
0.1
0.01
0.001
0.01
0.1
1
Pulse width : P
W
[ sec ]
9
7MBP200VEA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
10
7MBP200VEA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2012.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Measurement equipment
• Machine tools
• Audiovisual equipment • Electrical home appliances
• Personal equipment • Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Traffic-signal control equipment
• Emergency equipment for responding to disasters and anti-burglary devices
• Medical equipment
• Trunk communications equipment
• Gas leakage detectors with an auto-shut-off feature
• Safety devices
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).
• Space equipment
• Aeronautic equipment
• Nuclear control equipment
• Submarine repeater equipment
7. Copyright ©1996-2012 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.
11
7MBP200VEA060-50 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 7MBP200VEA120-50 | FUJI | IGBT MODULE (V series) 1200V / 200A / IPM | 获取价格 |
|
| 7MBP200XDN065-50 | FUJI | IPM(Inv.+Gate Driver) P630 | 获取价格 |
|
| 7MBP200XEN065-50 | FUJI | IPM(Inv.+Gate Driver) P631 | 获取价格 |
|
| 7MBP200XEN120-50 | FUJI | IPM(Inv.+Gate Driver) P631 | 获取价格 |
|
| 7MBP250XDN065-50 | FUJI | IPM(Inv.+Gate Driver) P630 | 获取价格 |
|
| 7MBP25RA-120 | ETC | 7 IPM IGBT | 获取价格 |
|
| 7MBP25RA120 | FUJI | IGBT-IPM(1200V/25A) | 获取价格 |
|
| 7MBP25RJ-120 | ETC | IGBTs | 获取价格 |
|
| 7MBP25RJ120 | FUJI | IGBT IPM R-series 1200V class | 获取价格 |
|
| 7MBP25RU2A120-50 | FUJI | IPM(Inv.+Gate Driver) P610 | 获取价格 |
|
7MBP200VEA060-50 相关文章
Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
- 2024-09-20
- 6
Bourns 精密环境传感器产品选型手册(英文版)
- 2024-09-20
- 9
Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
- 2024-09-20
- 8
Bourns GMOV 混合过压保护组件产品选型手册(英文版)
- 2024-09-20
- 6
