7MBP150TEA060 [FUJI]
Econo IPM series; 依可IPM系列
| 型号： | 7MBP150TEA060 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | Econo IPM series |
| 文件： | 总9页 (文件大小：359K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
7MBP150TEA060
Econo IPM series
600V / 150A 7 in one-package
Features
· Temperature protection provided by directly detecting the junction
temperature of the IGBTs
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
built-in control circuit
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
Item
Symbol
Rating
Unit
Min.
Max.
VDC
VDC(surge)
VSC
VCES
IC
Bus voltage
DC
0
450
500
400
600
150
300
150
431
50
V
Surge
0
V
Short operating
200
V
Collector-Emitter voltage *1
Collector current
0
-
-
-
-
-
-
-
-
V
DC
A
ICP
1ms
A
-IC
Duty=68.2% *2
A
PC
Collector power dissipation One transistor *3
W
A
IC
Collector current
DC
ICP
1ms
100
50
A
IF
Forward current diode
A
PC
Collector power dissipation One transistor *3
Supply voltage of Pre-Driver *4
Input signal voltage *5
198
20
W
V
VCC
Vin
-0.5
-0.5
Vcc+0.5
3
V
Iin
Input signal current
-
mA
V
VALM
IALM
Tj
Alarm signal voltage *6
-0.5
Vcc
20
Alarm signal current *7
-
-
mA
°C
°C
°C
°C
V
Junction temperature
150
100
125
260
AC2500
3.5
Topr
Tstg
Tsol
Viso
Operating case temperature
Storage temperature
-20
-40
Solder temperature *8
-
-
-
Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.)
Screw torque
Mounting (M5)
N·m
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or ‚u or W, N and U or V or W
*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.47/(150 x 2.6) x 100=68.2%
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.29=431 W [Inverter]
Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Breake]
*4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13
*5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13.
*6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13.
*7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19.
*8 : Immersion time 10±1sec.
7MBP150TEA060
IGBT-IPM
Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)
Main circuit
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
mA
ICES
VCE=600V Vin terminal open.
Collector current at off signal input
Collector-Emitter saturation voltage
-
-
1.0
2.3
-
VCE(sat)
VF
Ic=150A
Terminal
Chip
-
-
V
-
1.8
-Ic=150A
Forward voltage of FWD
Terminal
Chip
-
-
2.6
-
V
-
1.6
ICES
Collector current at off signal input
Collector-Emitter saturation voltage
-
-
-
1.0
2.2
-
mA
V
VCE=600V Vin terminal open.
VCE(sat)
-
Ic=50A
Terminal
Chip
-
1.75
Forward voltage of Diode
VF
-
-
-
3.3
-
V
-Ic=50A
Terminal
Chip
1.9
ton
toff
trr
VDC=300V,Tj=125°C
Turn-on time
1.2
-
-
-
-
-
-
µs
IC=150A Fig.1, Fig.6
Turn-off time
3.6
0.3
-
VDC=300V, IC=150A Fig.1, Fig.6
Internal wiring inductance=50nH
Main circuit wiring inductace=54nH
Reverse recovery time
Maximum Avalanche Energy
(A non-repetition)
-
PAV
170
mJ
Control circuit
Item
Symbol
Iccp
Condition
Min.
Typ.
Max. Unit
Switching Trequency : 0 to 15kHz
Tc=-20 to 125°C Fig.7
ON
Supply current of P-line side pre-driver(one unit)
Supply current of N-line side pre-driver
Input signal threshold voltage (on/off)
mA
mA
V
-
-
-
-
18
65
ICCN
Vin(th)
1.00
1.25
1.35
1.70
1.95
OFF
V
1.60
8.0
VZ
Rin=20k ohm
Input zener voltage
V
-
-
-
-
tALM
Tc=-20°C Fig.2
Tc=25°C Fig.2
Tc=125°C Fig.2
Alarm terminal
Alarm signal hold time
ms
ms
ms
ohm
1.1
-
-
-
2.0
-
4.0
1575
RALM
Current limit resistor
1425
1500
Protection Section ( Vcc=15V)
Item
Symbol
Condition
Min.
Typ.
Max. Unit
225
-
Over Current Protection Level of Inverter circuit
Over Current Protection Level of Brake circuit
Over Current Protection Delay time
SC Protection Delay time
IOC
A
Tj=125°C
75
-
IOC
A
Tj=125°C
-
5
-
-
tDOC
tSC
µs
µs
°C
°C
V
Tj=125°C
-
8
Tj=125°C Fig.4
Surface of IGBT chips
150
-
-
-
IGBT Chip Over Heating
TjOH
TjH
20
-
-
12.5
-
Over Heating Protection Hysteresis
Under Voltage Protection Level
11.0
0.2
VUV
VH
0.5
Under Voltage Protection Hysteresis
V
Thermal characteristics( Tc=25°C)
Item
Symbol
Rth(j-c)
Rth(j-c)
Rth(j-c)
Rth(c-f)
Min.
Typ.
Max.
0.29
0.47
0.63
Unit
°C/W
°C/W
°C/W
-°C/W
Junction to Case thermal resistance *9
Inverter
Brake
IGBT
FWD
IGBT
-
-
-
-
-
-
-
Case to fin thermal resistance with compound
*9 For 1device, Case is under the device
0.05
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Item
Condition
Min.
Typ.
Max.
Unit
Common mode rectangular noise
Pulse width 1µs, polarity ±,10minuets
Judge : no over-current, no miss operating
Rise time 1.2µs, Fall time 50µs
±2.0
-
-
kV
Common mode lightning surge
±5.0
-
-
kV
Interval 20s, 10 times
Judge : no over-current, no miss operating
Recommendable value
Item
DC Bus Voltage
Symbol
VDC
VCC
-
Min.
-
Typ.
Max.
400
Unit
V
-
15.0
-
Operating Supply Voltage of Pre-Driver
Screw torque (M5)
13.5
2.5
16.5
3.0
V
Nm
Weight
Item
Symbol
Min.
Typ.
Max.
Unit
Weight
Wt
-
270
-
g
7MBP150TEA060
IGBT-IPM
Vin(th)
Vin
On
Vin(th)
trr
90%
50%
Ic
90%
ton
10%
toff
Figure 1. Switching Time Waveform Definitions
off
off
/Vin
on
on
Gate On
Vge (Inside IPM )
Gate Off
Fault (Inside IPM
)
normal
alarm
/ALM
2ms (typ.)
tALM > Max.
1
Fault : Over-current,Over-heat or Under-voltage
Figure 2. Input/Output Timing Diagram
tALM > Max.
tALM
2
3
tsc
Ic
Ic
Ic
ALM
ALM
I
I
ALM
I
Figure.4 Definition of tsc
Vcc
P
20k
L
DC
300V
IPM
+
+
DC
15V
Vin
HCP-L
4504
CT
VccU
20k
P
GND
N
Ic
IPM
DC
15V
VinU
U
V
Figure 6. Switching Characteristics Test Circuit
AC200V
SW1
GNDU
Vcc
+
20k
DC
15V
VinX
W
N
Icc
Vcc
Vin
A
P
4700p
SW2
GND
Noise
IPM
U
V
DC
15V
P.G
+8V
fsw
Earth
Cooling
Fin
W
N
GND
Figure 5. Noise Test Circuit
Figure 7. Icc Test Circuit
7MBP150TEA060
IGBT-IPM
Block diagram
P
VccU
4
VinU
3
2
Pre-Driver
Pre-Driver
Pre-Driver
ALMU
ALM
R
1.5k
Vz
Vz
Vz
GNDU
VccV
1
8
U
7
6
VinV
ALMV
RALM1.5k
5
GNDV
V
VccW 12
VinW 11
ALMW 10
ALM
R
1.5k
9
GNDW
W
14
16
Vcc
VinX
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Vz
Vz
Vz
Vz
13
17
GND
VinY
Pre-drivers include following functions
1.Amplifier for driver
VinZ
18
2.Short circuit protection
B
3.Under voltage lockout circuit
4.Over current protection
VinDB 15
ALM
19
ALM
R
1.5k
5.IGBT chip over heating protection
N
Outline drawings, mm
Package Type : P622
Mass : 270g
7MBP150TEA060
IGBT-IPM
Characteristics
Control circuit characteristics (Respresentative)
Power supply current vs. Switching frequency
Input signal threshold voltage
vs. Power supply voltage
Tj=25°C
Tc=125°C
Tj=125°C
70
2.5
2
P-side
60
50
40
30
20
10
0
N-side
Vcc=17V
} Vin(off)
} Vin(on)
Vcc=15V
Vcc=13V
1.5
1
Vcc=17V
Vcc=15V
Vcc=13V
0.5
0
0
5
10
15
20
25
12
13
14
15
16
17
18
Power supply voltage : Vcc (V)
Switching frequency : fsw (kHz)
Under voltage hysterisis vs. Jnction temperature
Under voltage vs. Junction temperature
14
12
10
1
0.8
0.6
0.4
0.2
0
8
6
4
2
0
20
40
60
80
100
120
140
20
40
60
80
100
120
140
Junction temperature : Tj (°C)
Junction temperature : Tj (°C)
Over heating characteristics
TjOH,TjH vs. Vcc
Alarm hold time vs. Power supply voltage
3
200
150
100
50
TjOH
2.5
2
Tc=100°C
Tc=25°C
1.5
1
0.5
0
TjH
0
12
13
14
15
16
17
18
12
13
14
15
16
17
18
Power supply voltage : Vcc (V)
Power supply voltage : Vcc (V)
7MBP150TEA060
IGBT-IPM
Main circuit characteristics (Respresentative)
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Tj=25°C(Terminal)
Tj=25°C(Chip)
200
200
150
100
50
Vcc=15V
Vcc=15V
150
Vcc=17V
Vcc=17V
Vcc=13V
Vcc=13V
100
50
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Collector-Emitter voltage : Vce (V)
Collector-Emitter voltage : Vce (V)
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Tj=125°C(Terminal)
200
Tj=125°C(Chip)
200
Vcc=15V
Vcc=15V
150
150
Vcc=17V
Vcc=13V
Vcc=17V
Vcc=13V
100
50
0
100
50
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Collector-Emitter voltage : Vce (V)
Collector-Emitter voltage : Vce (V)
Forward current vs. Forward voltage
(Chip)
Forward current vs. Forward voltage
(Terminal)
300
250
200
150
100
50
300
250
200
150
100
50
125°C
25°C
125°C
25°C
0
0
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
Forward voltage : Vf (V)
Forward voltage : Vf (V)
7MBP150TEA060
IGBT-IPM
Switching Loss vs. Collector Current
Edc=300V,Vcc=15V,Tj=25°C
Switching Loss vs. Collector Current
Edc=300V,Vcc=15V,Tj=125°C
12
10
8
12
10
8
Eon
Eon
6
6
Eoff
Eoff
Err
4
4
Err
2
2
0
0
0
40
80
120
160
0
40
80
120
160
Collector current : Ic (A)
Collector current : Ic (A)
Transient thermal resistance
1
FWD
IGBT
0.1
0.01
0.001
0.01
0.1
1
Pulse width :Pw (sec)
Power derating for IGBT
(per device)
Power derating for FWD
(per device)
500
400
300
300
250
200
150
100
50
200
100
0
0
0
20
40
60
80 100 120 140 160
0
20
40
60
80 100 120 140 160
Case Temperature : Tc (°C)
Case Temperature : Tc (°C)
7MBP150TEA060
IGBT-IPM
Switching time vs. Collector current
Edc=300V,Vcc=15V,Tj=125°C
Switching time vs. Collector current
Edc=300V,Vcc=15V,Tj=25°C
10000
1000
100
10000
1000
100
ton
toff
ton
toff
tf
tf
10
10
0
50
100
150
200
250
0
50
100
150
200
250
Collector current : Ic (A)
Collector current : Ic (A)
Reverse recovery characteristics
trr,Irr vs.IF
trr125°C
trr25°C
100
10
1
Irr125°C
Irr25°C
0
50
100
150
200
250
Forward current:IF(A)
7MBP150TEA060
IGBT-IPM
Characteristics
Dynamic Brake Characteristics (Respresentative)
Collector current vs. Collector-Emitter voltage
Tj=25°C
Collector current vs. Collector-Emitter voltage
Tj=125°C
80
80
60
40
20
0
Vcc=15V
Vcc=15V
Vcc=17V
Vcc=17V
60
Vcc=13V
Vcc=13V
40
20
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Collector-Emitter voltage : Vce (V)
Collector-Emitter voltage : Vce (V)
Transient thermal resistance
1
IGBT
0.1
0.01
0.001
0.01
0.1
1
Pulse width :Pw (sec)
Power derating for IGBT
(per device)
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
Case Temperature : Tc (°C)
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