7MBP150VDA060-50 [FUJI]
IGBT MODULE (V series) 600V / 150A / IPM; IGBT模块（ V系列） 600V / 150A / IPM
| 型号： | 7MBP150VDA060-50 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | IGBT MODULE (V series) 600V / 150A / IPM |
| 文件： | 总11页 (文件大小：677K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
http://www.fujielectric.com/products/semiconductor/
7MBP150VDA060-50
IGBT MODULE (V series)
600V / 150A / IPM
IGBT Modules
Features
• Temperature protection provided by directly detecting
the junction temperature of the IGBTs
• Low power loss and soft switching
• High performance and high reliability IGBT with overheating
protection
• Higher reliability because of a big decrease in number of
parts in built-in control circuit
Maximum Ratings and Characteristics
Absolute Maximum Ratings (T =25ºC, VCC=15V unless otherwise specified)
C
Items
Symbol
Min.
Max.
Units
Collector-Emitter Voltage (*1)
Short Circuit Voltage
V
V
CES
SC
0
600
400
150
300
150
367
75
V
V
200
DC
IC
-
A
Collector Current
1ms
Icp
-
A
Duty=60.6% (*2)
-IC
-
A
Collector Power Dissipation 1 device (*3)
P
C
-
W
A
DC
I
I
I
C
-
Collector Current
1ms
cp
F
-
150
75
A
Forward Current of Diode
Collector Power Dissipation 1 device (*3)
Supply Voltage of Pre-Driver (*4)
Input Signal Voltage (*5)
-
-
A
P
V
V
V
C
250
20
W
V
CC
in
-0.5
-0.5
-0.5
-
V
CC+0.5
V
Alarm Signal Voltage (*6)
Alarm Signal Current (*7)
Junction Temperature
ALM
V
CC
V
I
ALM
20
150
mA
ºC
ºC
ºC
ºC
Vrms
T
T
T
T
j
-
Operating Case Temperature
Storage Temperature
opr
stg
sol
-20
-40
-
110
125
Solder Temperature (*8)
260
Isolating Voltage (*9)
V
iso
-
AC2500
Terminal (M4)
Screw Torque
-
-
1.7
Nm
Mounting (M4)
Note *1: VCES shall be applied to the input voltage between terminal P-(U,V, W) and (U,V, W, B)-N.
Note *2: Duty=125ºC/Rth(j-c)D /(I ×V Max.)×100
Note *3: P =125ºC/Rth(j-c)Q (Inverter & Brake)
F
F
C
Note *4: VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13.
Note *5: Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 15~18 and 13.
Note *6: VALM shall be applied to the voltage between terminal No.2 and 1, 6 and 5, 10 and 9, 19 and 13.
Note *7: IALM shall be applied to the input current to terminal No.2,6,10 and 19.
Note *8: Immersion time 10±1sec. 1time.
Note *9: Terminal to base, 50/60Hz sine wave 1min. All terminals should be connected together during the test.
1
7MBP150VDA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical Characteristics (T
j
=25ºC, VCC=15V unless otherwise specified)
Symbol Conditions
Items
Min.
Typ.
Max.
Units
Collector Current at off signal input
Collector-Emitter saturation voltage
I
CES
V
CE=600V
-
-
1.0
2.15
-
mA
V
Terminal
Chip
-
-
V
V
CE(sat)
I
I
C
=150A
-
1.40
V
Terminal
Chip
-
-
2.50
-
V
Forward voltage of FWD
F
F=150A
-
1.80
V
Collector Current at off signal input
Collector-Emitter saturation voltage
I
CES
V
CE=600V
-
-
1.0
1.85
-
mA
V
Terminal
Chip
-
-
V
CE(sat)
I
I
C
=75A
-
1.40
V
Terminal
Chip
-
-
-
2.50
-
V
Forward voltage of FWD
Switching time
V
F
C=75A
2.05
V
t
on
off
1.1
-
-
-
-
µs
µs
VDC=300V, T
j
=125ºC, I
C=150A
t
2.1
t
rr
V
DC=300V, I
C
=150A
-
-
0.3
µs
Supply current of P-side pre-driver (per one unit)
Supply current of N-side pre-driver
I
ccp
ccn
-
-
-
-
21
82
1.6
1.9
-
mA
mA
V
Switching Frequency= 0-15kHz
=-20~110ºC
T
C
I
V
inth(on)
inth(off)
ON
1.2
1.5
225
113
-
1.4
1.7
-
Input signal threshold voltage
Vin-GND
V
OFF
V
Inverter
Brake
A
Over Current Protection
Level
I
OC
T
j
=125ºC
-
-
A
Over Current Protection Delay time
Short Circuit Protection Delay time
t
dOC
SC
T
T
j
j
=125ºC
=125ºC
5
-
µs
µs
ºC
ºC
V
t
-
2
3
IGBT Chips Over Heating Protection Temperature Level TjOH
Surface of IGBT Chips
150
-
-
-
Over Heating Protection Hysteresis
Under Voltage Protection Level
T
jH
20
-
-
V
UV
H
11.0
0.2
1.0
2.5
5.0
960
12.5
-
Under Voltage Protection Hysteresis
V
0.5
2.0
4.0
8.0
1265
V
t
t
t
ALM(OC)
ALM(UV)
ALM(TjOH)
2.4
4.9
11.0
1570
ms
ms
ms
Ω
ALM-GND
Alarm Signal Hold Time
VCC
10V
T
C
=-20~110ºC
Resistance for current limit
R
ALM
Thermal Characteristics (T = 25ºC)
C
Items
Symbol
Min.
Typ.
Max.
0.34
0.55
0.50
0.98
-
Units
IGBT
FWD
IGBT
FWD
R
R
R
R
R
th(j-c)Q
th(j-c)D
th(j-c)Q
th(j-c)D
th(c-f)
-
-
-
-
-
-
°C/W
°C/W
°C/W
°C/W
°C/W
Inverter
Brake
-
Junction to Case Thermal Resistance (*10)
-
-
Case to Fin Thermal Resistance with Compound
0.05
Note *10: For 1device, the measurement point of the case is just under the chip.
Noise Immunity (VDC=300V, VCC=15V)
Items
Conditions
Pulse width 1μs, polarity ±, 10 min.
Judge : no over-current, no miss operating
Min.
±2.0
Typ.
Max.
Units
Common mode rectangular noise
-
-
kV
Recommended Operating Conditions
Items
Symbol
Min.
-
Typ.
Max.
400
16.5
20
Units
V
DC Bus Voltage
VDC
-
Power Supply Voltage of Pre-Driver
Switching frequency of IPM
VCC
13.5
-
15.0
V
fSW
-
-
-
kHz
µs
Arm shoot through blocking time for IPM's input signal
Screw Torque (M4)
t
dead
1.0
1.3
-
-
1.7
Nm
2
7MBP150VDA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Block Diagram
VccU
④
P
U
VinU
③
②
Pre-Driver
Pre-Driver
ALMU
RALM
RALM
RALM
GNDU
VccV
①
⑧
VinV
⑦
⑥
ALM V
GNDV
VccW
V
⑤
⑫
VinW
⑪
⑩
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
Pre-Driver
ALM W
GNDW
Vcc
W
⑨
⑭
VinX
GND
VinY
⑯
⑬
⑰
VinZ
⑱
B
VinDB
ALM
⑮
⑲
N
RALM
Pre-drivers include following functions
1. Amplifier for driver
2. Short circuit protection
3. Under voltage lockout circuit
4. Over current protection
5. IGBT chip over heating protection
3
7MBP150VDA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Power supply current vs. Switching frequency
= 25℃(typ.)
Input signal threshold voltage
vs. Power supply voltage (typ.)
T
j
140
120
100
80
3
N-side
P-side
TC =25～125℃
2.5
VCC=17V
VCC=15V
VCC=13V
2
V
inth(off)
1.5
60
V
inth(on)
1
40
VCC=17V
VCC=15V
VCC=13V
0.5
20
0
0
0
5
10
15
20
25
140
18
12
13
14
15
16
17
18
140
18
Switchig frequency ： fsw [ kHz ]
Power supply voltage ： VCC [ V ]
Under voltage vs. Junction temperature (typ.)
Under voltage hysterisis
vs. Junction temperature (typ.)
15
12
9
1
0.8
0.6
0.4
0.2
6
3
0
0
0
20
40
60
80
100
120
0
20
40
60
80
100
120
Junction temperature ： T
j
[ ℃ ]
Junction temperature ： T
j
[ ℃ ]
Alarm hold time vs. Power supply voltage (typ.)
Over heating characteristics
T
jOH,TjH vs. VCC (typ.)
10
8
200
150
100
50
T
jOH
t
ALM(TjOH)
6
4
t
ALM(OC)
2
TjH
0
0
12
13
14
15
16
17
12
13
14
15
16
17
Power supply voltage ： VCC [ V ]
Power supply voltage ： VCC [ V ]
4
7MBP150VDA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Inverter
Collector current vs. Collector-Emitter voltage
=25℃[Chip] (typ.)
Collector current vs. Collector-Emitter voltage
T
j
T
j=25℃[Terminal] (typ.)
300
250
200
150
100
50
300
250
200
150
100
50
VCC =15V
V
CC=15V
VCC =17V
VCC=13V
VCC=17V
VCC=13V
0
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
3.5
3.5
0
0
0
0.5
1
1.5
2
2.5
3
3.5
3.5
3.5
Collector-Emitter voltage ： VCE [ V ]
Collector-Emitter voltage ： VCE [ V ]
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
T
j
=125℃[Chip] (typ.)
T
j
=125℃[Terminal] (typ.)
300
250
200
150
100
50
300
250
200
150
100
50
VCC=15V
VCC =15V
VCC =17V
VCC=13V
VCC=13V
VCC=17V
0
0
0.5
1
1.5
2
2.5
3
0.5
1
1.5
2
2.5
3
Collector-Emitter voltage ： VCE [ V ]
Collector-Emitter voltage ： VCE [ V ]
Forward current vs. Forward voltage
[Chip] (typ.)
Forward current vs. Forward voltage
[Terminal] (typ.)
300
250
200
150
100
50
300
250
200
150
100
50
Tj=125℃
Tj=25℃
Tj=125℃
Tj=25℃
0
0
0.5
1
1.5
2
2.5
3
0.5
1
1.5
2
2.5
3
Forward voltage ： V
F
[ V ]
Forward voltage ： V [ V ]
F
5
7MBP150VDA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching Loss vs. Collector Current (typ.)
DC=300V,VCC=15V,T=25℃
Switching Loss vs. Collector Current (typ.)
V
j
V
DC=300V,VCC=15V,T=125℃
j
20
15
10
5
20
15
10
5
E
on
Eon
Eoff
Eoff
E
ｒｒ
E
ｒｒ
0
0
0
50
100
150
[ A ]
200
250
800
150
0
50
100
150
[ A ]
200
250
Collector current ： I
C
Collector current ： I
C
Reversed biased safe operating area
cc=15V,T≦125℃[Main Terminal] (min.)
Transient thermal resistance (max.)
V
j
600
500
400
300
200
100
0
10
1
FWD
IGBT
0.1
RBSOA
(Repetitive pulse)
0.01
0
200
400
600
0.001
0.01
0.1
1
10
Collector-Emitter voltage ： VCE [ V ]
Pulse width ： P [ sec ]
W
Power derating for IGBT (max.)
[per device]
Power derating for FWD (max.)
[per device]
500
400
300
200
100
0
300
250
200
150
100
50
0
0
50
100
[ ℃ ]
0
50
100
[ ℃ ]
150
Case Temperature ： T
C
Case Temperature ： T
C
6
7MBP150VDA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
DC=300V,VCC=15V,T=25℃
Switching time vs. Collector current (typ.)
V
j
V
DC=300V,VCC=15V,T=125℃
j
10000
1000
100
10000
1000
100
ton
t
t
on
off
t
off
tf
tf
10
10
0
50
100
150
200
250
0
50
100
150
200
250
Collector current ： IC [ A ]
Collector current ： IC [ A ]
Reverse recovery characteristics (typ.)
Over current protection vs. Junction temperature (typ.)
t
rr,Irr vs. I
f
VCC=15V
1000
100
10
500
400
300
200
100
0
trr Tj=125℃
t
rr
j
T=25℃
Irr Tj=125℃
Irr Tj=25℃
1
0
50
100
150
200
250
0
20
40
60
80
100
120
140
Forward current ： IF [ A ]
Junction temperature ： Tj [ ℃ ]
7
7MBP150VDA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Brake
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
T
j
=25℃[Chip] (typ.)
T
j=25℃[Terminal] (typ.)
150
125
100
75
150
125
100
75
VCC=15V
VCC=15V
VCC=17V
VCC=13V
VCC=13V
VCC=17V
50
50
25
25
0
0
0
0
0
0.5
1
1.5
2
2.5
3
3.5
3.5
3.5
0
0.5
1
1.5
2
2.5
3
3.5
3.5
3.5
Collector-Emitter voltage ： VCE [ V ]
Collector-Emitter voltage ： VCE [ V ]
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
T
j
=125℃[Chip] (typ.)
T
j
=125℃[Terminal] (typ.)
150
125
100
75
150
125
100
75
VCC=15V
VCC=15V
V
CC =17V
V
CC=13V
V
CC =17V
VCC =13V
50
50
25
25
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Collector-Emitter voltage ： VCE [ V ]
Collector-Emitter voltage ： VCE [ V ]
Forward current vs. Forward voltage
[Chip] (typ.)
Forward current vs. Forward voltage
[Terminal] (typ.)
150
125
100
75
150
125
100
75
Tj=125℃
Tj=25℃
Tj=125℃
Tj=25℃
50
50
25
25
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
[ V ]
3
Forward voltage ： V
F
[ V ]
Forward voltage ： V
F
8
7MBP150VDA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching Loss vs. Collector Current (typ.)
Reversed biased safe operating area
V
DC=300V,VCC=15V
V
CC=15V,T≦125℃[Main Terminal] (min.)
j
6
5
4
3
2
1
0
300
250
200
150
100
50
Tj=125℃
Tj=25℃
RBSOA
(Repetitive pulse)
0
0
50
100
[ A ]
150
0
200
400
600
800
Collector current ： I
C
Collector-Emitter voltage ： VCE [ V ]
Power derating for IGBT (max.)
[per device]
Power derating for FWD (max.)
[per device]
400
300
200
100
0
200
150
100
50
0
0
50
100
[ ℃ ]
150
0
50
100
[ ℃ ]
150
Case Temperature ： T
C
Case Temperature ： T
C
Transient thermal resistance (max.)
10
FWD
IGBT
1
0.1
0.01
0.001
0.01
0.1
1
10
Pulse width ： P [ sec ]
W
9
7MBP150VDA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Outline Drawings, mm
10
7MBP150VDA060-50
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.
2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.
3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.
4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers
• OA equipment
• Communications equipment (terminal devices)
• Measurement equipment
• Machine tools
• Audiovisual equipment • Electrical home appliances
• Personal equipment • Industrial robots etc.
5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
• Transportation equipment (mounted on cars and ships)
• Traffic-signal control equipment
• Emergency equipment for responding to disasters and anti-burglary devices
• Medical equipment
• Trunk communications equipment
• Gas leakage detectors with an auto-shut-off feature
• Safety devices
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment
(without limitation).
• Space equipment
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• Nuclear control equipment
• Submarine repeater equipment
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No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
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Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.
11
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