2SK3930-01L [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | 2SK3930-01L |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总4页 (文件大小：179K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3930-01L,S,SJ
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm) 200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breakdown
Avalanche-proof
Low on-resistance
Low driving power
See to P4
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Symbol
Ratings
600
Unit
V
Remarks
Drain(D)
Drain-source voltage
VDS
VDSX
ID
600
V
VGS=-30V
Continuous Drain Current
Pulsed Drain Current
11
A
ID(puls]
VGS
IAR
±44
A
Gate-Source Voltage
±30
V
Gate(G)
Maximum Avalanche current
Non-Repetitive
11
A
Note *1
Note *2
Source(S)
EAS
439.1
mJ
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
=
Maximum Avalanche Energy
Repetitive
Note *2:StartingTch=25°C,IAS=5A,L=32.2mH,
EAR
19.5
mJ
Note *3
VCC=60V,RG=50Ω
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Peak Diode Recovery -di/dt
Max. Power Dissipation
EAS limited by maximum channel temperature
and Avalanche current.
dVDS/dt
dV/dt
-di/dt
PD
20
5
kV/µs
<
VDS 600V
=
kV/µs Note *4
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
100
195
1.67
+150
Note *5
A/µs
W
Tc=25°C
Ta=25°C
Operating and Storage
Temperature range
Tch
°C
Tstg
-55 to +150 °C
<
<
<
Note *4:IF -ID, -di/dt=100A/µs,VCC BVDSS,Tch 150°C
=
<
=
=
<
<
Note *5:IF -ID, dv/dt=5kV/µs,VCC BVDSS,Tch 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
Test Conditions
=
=
=
Max. Units
V
Min.
Typ.
Symbol
BVDSS
VGS(th)
Item
µ
ID= 250 A
VGS=0V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
600
3.0
µ
ID= 250 A
VDS=VGS
V
5.0
25
2.0
100
0.80
Tch=25°C
µA
mA
nA
VDS=600V VGS=0V
VDS=480V VGS=0V
VDS=0V
VGS=±30V
Zero Gate Voltage Drain Current
IDSS
Tch=125°C
IGSS
RDS(on)
gfs
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
ID=5.5A VGS=10V
0.62
Ω
S
5
10
1100
150
8
ID=5.5A VDS=25V
VDS=25V
Ciss
Coss
Crss
td(on)
tr
1650
225
12
pF
VGS=0V
Output Capacitance
f=1MH
Reverse Transfer Capacitance
Turn-On Time ton
ns
17
7
26
VCC=300V ID=5.5A
VGS=10V
11
40
8
60
td(off)
tf
Turn-Off Time toff
RGS=10 Ω
12
30
9
45
VCC=300V
ID=11A
QG
nC
Total Gate Charge
13.5
15
1.50
250
1.5
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
10
VGS=10V
1.00
120
0.6
IF=11A VGS=0V Tch=25°C
IF=11A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
trr
Qrr
ns
µC
Thermal characteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max. Units
0.641 °C/W
Thermal resistance
°C/W
75
www.fujielectric.co.jp/fdt/scd
1
2SK3930-01L,S,SJ
FUJI POWER MOSFET
Characteristics
Allowable Power Dissipation
PD=f(Tc)
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
240
24
20
16
12
8
20V
10V
7.5V
200
160
120
80
7V
6.5V
40
4
VGS=6V
0
0
0
25
50
75
100
125
150
0
5
10
15
20
25
VDS [V]
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
100
10
1
10
1
0.1
0.01
0.1
0.01
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
VGS[V]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5.5A,VGS=10V
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
7.0V
VGS=6.5V
7.5V
8V
10V
20V
max.
typ.
0
2
4
6
8
10 12 14 16 18 20 22 24 26
ID [A]
-50
-25
0
25
50
75
100
125
150
Tch [°C]
2
2SK3930-01L,S,SJ
FUJI POWER MOSFET
Typical Gate Charge Characteristics
Gate Threshold Voltage vs. Tch
VGS=f(Qg):ID=11A,Tch=25°C
VGS(th)=f(Tch):VDS=VGS,ID=250uA
24
20
16
12
8
7
6
Vcc= 120V
max.
min.
5
4
3
2
1
0
300V
480V
4
0
0
10
20
30
40
50
60
70
80
-50
-25
0
25
50
75
100
125
150
Tch [°C]
Qg [nC]
Typical Forward Characteristics of Reverse Diode
Typical Capacitance
IF=f(VSD):80 µs pulse test,Tch=25°C
C=f(VDS):VGS=0V,f=1MHz
10n
1n
100
10
1
Ciss
100p
10p
1p
Coss
Crss
0.1
10-1
100
101
102
103
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VSD [V]
VDS [V]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=11A
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10Ω
103
102
101
100
500
400
300
200
100
0
tf
IAS=5A
td(off)
IAS=7A
td(on)
IAS=11A
tr
10-1
100
101
102
0
25
50
75
100
125
150
starting Tch [°C]
ID [A]
3
2SK3930-01L,S,SJ
FUJI POWER MOSFET
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=60V
102
101
100
10-1
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
Outline Drawings (mm)
Type(L)
Type(S)
Type(SJ)
4
1
2 3
1
2
3
4
1
2
3
1
2 3
http://www.fujielectric.co.jp/fdt/scd/
4
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