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2SK3933-01L [FUJI]

N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
2SK3933-01L
型号： 2SK3933-01L
厂家： FUJI ELECTRIC    FUJI ELECTRIC
描述：

N-CHANNEL SILICON POWER MOSFET
N沟道硅功率MOSFET
文件： 总4页 (文件大小：163K)
中文：  中文翻译
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2SK3933-01L,S,SJ  
N-CHANNEL SILICON POWER MOSFET  
200406  
Outline Drawings (mm)  
FUJI POWER MOSFET  
Super FAP-G Series  
Features  
High speed switching  
No secondary breakdown  
Avalanche-proof  
Low on-resistance  
Low driving power  
See to P4  
Applications  
Switching regulators  
DC-DC converters  
UPS (Uninterruptible Power Supply)  
Maximum ratings and characteristic  
Absolute maximum ratings  
(Tc=25°C unless otherwise specified)  
Equivalent circuit schematic  
Drain(D)  
Item  
Symbol  
Ratings  
500  
Unit  
V
Remarks  
Drain-source voltage  
VDS  
VDSX  
ID  
500  
V
VGS=-30V  
Continuous Drain Current  
Pulsed Drain Current  
11  
A
ID(puls]  
VGS  
IAR  
±44  
A
Gate(G)  
Gate-Source Voltage  
Maximum Avalanche current  
Non-Repetitive  
±30  
V
Source(S)  
11  
A
Note *1  
Note *2  
EAS  
453.9  
mJ  
<
Note *1:Tch 150°C,Repetitive and Non-repetitive  
=
Maximum Avalanche Energy  
Repetitive  
Note *2:StartingTch=25°C,IAS=4.4A,L=43mH,  
EAR  
16.5  
mJ  
Note *3  
VCC=50V,RG=50Ω  
Maximum Avalanche Energy  
Maximum Drain-Source dV/dt  
Peak Diode Recovery dV/dt  
Max. Power Dissipation  
EAS limited by maximum channel temperature  
and Avalanche current.  
dVDS/dt  
dV/dt  
PD  
20  
5
kV/µs  
<
VDS 500V  
=
kV/µs Note *4  
See to the ‘Avalanche Energy’ graph  
Note *3:Repetitive rating:Pulse width limited by  
maximum channel temperature.  
See to the ‘Transient Thermal impedance’  
graph.  
165  
1.67  
+150  
Tc=25°C  
Ta=25°C  
W
Operating and Storage  
Temperature range  
Tch  
°C  
°C  
Tstg  
-55 to +150  
<
<
<
Note *4:IF -ID, -di/dt=50A/µs,VCC BVDSS,Tch 150°C  
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)  
Min.  
Typ.  
Max. Units  
Symbol  
BVDSS  
VGS(th)  
Item  
Test Conditions  
µ
V
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
ID= 250 A  
VGS=0V  
VDS=VGS  
500  
3.0  
µ
V
ID= 250 A  
5.0  
µA  
Tch=25°C  
VDS=500V VGS=0V  
25  
Zero Gate Voltage Drain Current  
IDSS  
µA  
Tch=125°C  
VDS=400V VGS=0V  
250  
IGSS  
RDS(on)  
gfs  
VGS=±30V  
VDS=0V  
ID=5.5A VGS=10V  
nA  
Gate-Source Leakage Current  
Drain-Source On-State Resistance  
Forward Transconductance  
Input Capacitance  
10  
100  
Ω
S
0.57  
9.0  
950  
130  
6.0  
16  
6.0  
33  
5.5  
0.70  
ID=5.5A VDS=25V  
VDS=25V  
4.5  
Ciss  
Coss  
Crss  
td(on)  
tr  
pF  
1425  
195  
9.0  
24  
9.0  
50  
8.3  
Output Capacitance  
VGS=0V  
Reverse Transfer Capacitance  
Turn-On Time ton  
f=1MH  
ns  
VCC=300V ID=5.5A  
VGS=10V  
td(off)  
tf  
Turn-Off Time toff  
RGS=10 Ω  
QG  
nC  
Total Gate Charge  
VCC=250V  
ID=11A  
25  
10  
38  
15  
12  
QGS  
QGD  
VSD  
Gate-Source Charge  
Gate-Drain Charge  
VGS=10V  
8.0  
1.10  
650  
5.5  
V
IF=11A VGS=0V Tch=25°C  
IF=11A VGS=0V  
-di/dt=100A/µs  
Tch=25°C  
1.50  
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
trr  
Qrr  
ns  
µC  
Thermal characteristics  
Item  
Symbol  
Rth(ch-c)  
Rth(ch-a)  
Test Conditions  
channel to case  
channel to ambient  
Min.  
Typ.  
Max. Units  
0.758 °C/W  
Thermal resistance  
°C/W  
75  
www.fujielectric.co.jp/fdt/scd  
1
2SK3933-01L,S,SJ  
FUJI POWER MOSFET  
Characteristics  
Typical Output Characteristics  
Allowable Power Dissipation  
ID=f(VDS):80 µs pulse test,Tch=25°C  
PD=f(Tc)  
200  
30  
25  
20  
15  
10  
5
180  
160  
140  
120  
100  
80  
20V  
10V  
8.0V  
7.0V  
6.5V  
60  
40  
VGS=6.0V  
20  
0
0
0
25  
50  
75  
100  
125  
150  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS [V]  
Tc [°C]  
Typical Transfer Characteristic  
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C  
Typical Transconductance  
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C  
100  
10  
1
100  
10  
1
0.1  
0.1  
0.1  
1
10  
100  
0
1
2
3
4
5
6
7
8
9
10  
VGS[V]  
ID [A]  
Typical Drain-Source on-state Resistance  
RDS(on)=f(ID):80µs pulse test,Tch=25°C  
Drain-Source On-state Resistance  
RDS(on)=f(Tch):ID=5.5A,VGS=10V  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
VGS=6.0V  
6.5V  
7.0V  
8.0V  
10V  
20V  
max.  
typ.  
0
5
10  
15  
20  
25  
30  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Tch [°C]  
ID [A]  
2
2SK3933-01L,S,SJ  
FUJI POWER MOSFET  
Typical Gate Charge Characteristics  
Gate Threshold Voltage vs. Tch  
VGS=f(Qg):ID=11A,Tch=25°C  
VGS(th)=f(Tch):VDS=VGS,ID=250µA  
14  
12  
10  
8
7.0  
6.5  
6.0  
5.5  
Vcc= 100V  
250V  
max.  
5.0  
400V  
4.5  
4.0  
3.5  
min.  
3.0  
6
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
4
2
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
Qg [nC]  
Tch [°C]  
Typical Capacitance  
Typical Forward Characteristics of Reverse Diode  
C=f(VDS):VGS=0V,f=1MHz  
100 IF=f(VSD):80µs pulse test,Tch=25°C  
104  
103  
102  
101  
100  
Ciss  
10  
Coss  
1
Crss  
0.1  
0.00  
10-1  
100  
101  
102  
103  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
VSD [V]  
VDS [V]  
Typical Switching Characteristics vs. ID  
t=f(ID):Vcc=300V,VGS=10V,RG=10Ω  
Maximum Avalanche Energy vs. starting Tch  
E(AV)=f(starting Tch):Vcc=50V  
103  
102  
101  
100  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
IAS=4.4A  
IAS=6.6A  
IAS=11A  
tf  
td(off)  
td(on)  
tr  
0
10-1  
100  
101  
102  
0
25  
50  
75  
100  
125  
150  
starting Tch [°C]  
ID [A]  
3
2SK3933-01L,S,SJ  
FUJI POWER MOSFET  
Maximum Avalanche Current Pulsewidth  
IAV=f(tAV):starting Tch=25 °C,Vcc=50V  
102  
101  
100  
10-1  
10-2  
Single Pulse  
10-8  
10-7  
10-6  
10-5  
10-4  
10-3  
10-2  
tAV [sec]  
Maximum Transient Thermal Impedance  
Zth(ch-c)=f(t):D=0  
101  
100  
10-1  
10-2  
10-3  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
t [sec]  
Outline Drawings (mm)  
Type(L)  
Type(S)  
Type(SJ)  
4
1
2 3  
1
2
3
4
1
2
3
1
2 3  
http://www.fujielectric.co.jp/fdt/scd/  
4

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