2SK3934 [TOSHIBA]
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI); 东芝场效应晶体管硅N沟道MOS型（ -MOSVI ）
| 型号： | 2SK3934 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) |
| 文件： | 总6页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3934
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3934
Switching Regulator Applications
Unit: mm
·
·
·
·
Low drain-source ON resistance: R
High forward transfer admittance: |Y | =8.2 S (typ.)
= 0.23Ω (typ.)
DS (ON)
fs
Low leakage current: I
DSS
= 100 μA (V
= 500 V)
= 10 V, I = 1 mA)
D
DS
Enhancement-mode: V = 2.0~4.0 V (V
th
DS
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
V
V
500
500
±30
15
V
V
V
DSS
DGR
GSS
Drain-gate voltage (R = 20 kW)
GS
Gate-source voltage
DC
(Note 1)
I
D
Drain current
A
Pulse (t = 1 ms)
I
60
50
DP
(Note 1)
1: Gate
2: Drain
3: Source
Drain power dissipation (Tc = 25°C)
P
W
J
D
Single pulse avalanche energy
E
1.08
AS
(Note 2)
Avalanche current
I
15
5.0
A
AR
JEDEC
JEITA
?
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
SC-67
2-10U1B
Weight : 1.7 g (typ.)
T
150
ch
TOSHIBA
Storage temperature range
T
-55~150
stg
Thermal Characteristics
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
2.5
°C/W
°C/W
th (ch-c)
R
62.5
th (ch-a)
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V = 90 V, T = 25°C(initial), L = 8.16mH, I = 15 A, R = 25 W
1
DD ch
AR
G
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
2004-12-03
1
2SK3934
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±25 V, V = 0 V
Min
Typ.
Max
Unit
I
V
¾
±30
¾
¾
¾
±10
¾
mA
V
GSS
GS
DS
Gate-source breakdown voltage
Drain cut-off current
V
V
I
G
= ±10 mA, V
= 0 V
DS
(BR) GSS
I
V
= 500 V, V = 0 V
GS
¾
100
¾
mA
V
DSS
(BR) DSS
DS
Drain-source breakdown voltage
Gate threshold voltage
I
D
= 10 mA, V
= 0 V
GS
500
2.0
¾
¾
V
V
V
V
= 10 V, I = 1 mA
¾
4.0
0.3
¾
V
th
DS (ON)
DS
GS
DS
D
Drain-source ON resistance
Forward transfer admittance
Input capacitance
R
= 10 V, I = 7.5 A
0.23
8.2
3100
20
W
S
D
ï Y
f s
ï
= 10 V, I = 7.5 A
2.3
¾
D
C
iss
¾
V
= 25 V, V
= 0 V, f = 1 MHz
GS
pF
ns
Reverse transfer capacitance
Output capacitance
C
rss
¾
¾
DS
C
oss
¾
270
¾
Rise time
t
r
¾
70
¾
10 V
I
D
= 7.5 A
V
OUT
V
GS
0 V
R =26W
L
Turn-on time
t
on
¾
¾
¾
130
70
¾
¾
¾
50 W
Switching time
Fall time
t
f
V
200 V
DD
Duty 1%, t = 10 ms
w
Turn-off time
t
off
280
62
40
22
Total gate charge
Gate-source charge
Gate-drain charge
Q
¾
¾
¾
¾
¾
¾
g
V
400 V, V
DD
= 10 V, I = 15A
nC
Q
gs
GS
D
Q
gd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
15
Unit
A
Continuous drain reverse current
I
¾
¾
¾
¾
DR
(Note 1)
(Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
I
¾
¾
¾
¾
¾
60
- 1.7
¾
A
V
DRP
V
I
= 15A, V
= 15A, V
DR
= 0 V
¾
DSF
DR
GS
GS
t
rr
I
= 0 V,
1.3
18
ms
mC
dI /dt = 100 A/ms
Reverse recovery charge
Q
rr
¾
DR
Marking
K3934
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2004-12-03
2
2SK3934
I
D
– V
I – V
D DS
DS
20
16
12
8
50
10V
COMMON SOURCE
Tc = 25°C
COMMON SOURCE
Tc = 25°C
6.6V
8V
PULSE TEST
PULSE TEST
6.4V
6.2V
40
30
20
10
10V
7.5V
8V
7V
7V
6V
6.8V
5.8V
6.5V
6V
5.4V
4
V
GS
= 5V
V
GS
= 5 V
0
0
0
0
2
4
6
8
4
8
12
16
20
10
DRAIN- SOURCE VOLTAGE V
(V)
DRAIN- SOURCE VOLTAGE V
(V)
DS
DS
I
D
– V
V
– V
DS GS
GS
50
40
30
20
10
0
10
8
COMMON SOURCE
Tc = 25℃
COMMON SOURCE
= 20 V
V
DS
Tc = 25°C
PULSE TEST
PULSE TEST
6
Tc = 100°C
Tc = - 55°C
4
I
D
= 15 A
I
= 7.5 A
= 3.8 A
2
D
I
D
0
0
0
2
4
6
8
10
4
8
12
16
GS
20
GATE- SOURCE VOLTAGE V
(V)
GATE- SOURCE VOLTAGE V
(V)
GS
ï Y ï – I
R
– I
f s
D
DS (ON) D
100
10
1000
100
10
COMMON SOURCE
= 20 V
V
DS
Tc = - 55°C
PULSE TEST
V
= 10 V
GS
100
25
1
COMMON SOURCE
Tc = 25°C
PULSE TEST
0.1
0.1
1
10
100
1
10
100
DRAIN CURRENT
(A)
DRAIN CURRENT
(A)
D
D
2004-12-03
3
2SK3934
R
– Tc
I
– V
DS
DS (ON)
DR
1000
800
100
10
1
COMMON SOURCE
COMMON SOURCE
= 10 V
Tc = 25°C
V
GS
PULSE TEST
PULSE TEST
600
400
200
0
I
D
= 15A
10
7.5
5
3.8
3
1
V
= 0 V
GS
0.1
0
- 80
- 40
0
40
80
120
160
- 0.4
- 0.8
- 1.2
- 1.6
CASE TEMPERATURE Tc (°C)
DRAIN- SOURCE VOLTAGE V
(V)
DS
C – V
V
– Tc
DS
th
10000
1000
100
5
4
C
iss
3
2
1
C
oss
COMMON SOURCE
= 10 V
V
DS
COMMON SOURCE
= 0 V
C
rss
I
D
= 1 mA
V
GS
f = 1 MHz
Tc = 25°C
PULSE TEST
10
0
- 80
0.1
1
10
100
- 40
0
40
80
120
160
DRAIN- SOURCE VOLTAGE V
(V)
CASE TEMPERATURE Tc (°C)
DS
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
P – Tc
D
80
60
40
20
0
500
20
16
12
400
300
V
DS
V
DD
= 100 V
400V
200V
8
4
0
200
100
0
COMMON SOURCE
= 15 A
V
GS
I
D
Tc = 25°C
PULSE TEST
20
80
100
0
40
80
120
160
0
40
60
CASE TEMPERATURE Tc (°C)
TOTAL GATE CHARGE Q (nC)
g
2004-12-03
4
2SK3934
r
– t
w
th
10
1
Duty=0.5
0.2
0.1
0.1
0.05
P
DM
0.02
t
0.01
0.01
T
SINGLE PULSE
Duty = t/T
R
= 2.5°C/W
th (ch-c)
0.001
10μ
100μ
1ｍ
10ｍ
100ｍ
1
10
PULSE WIDTH
t
w
(s)
SAFE OPERATING AREA
E
AS
– T
ch
100
10
1
1200
I
max (PULSED) *
D
100 ms *
1000
I
D
max (CONTINUOUS) *
800
600
400
200
1 ms *
DC OPERATION
Tc = 25°C
0
25
*SINGLE NONREPETITIVE PULSE
Tc = 25°C
0.1
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
(°C)
CURVES MUST BE DERATED
T
ch
LINEALY WITH INCREASE IN
TEMPERATURE
0.01
B
VDSS
10
100
1000
1
15 V
I
AR
DRAIN- SOURCE VOLTAGE V
(V)
DS
- 15 V
V
V
DD
DS
B
TEST CIRCUIT
WAVE FORM
æ
ö
÷
1
2
R
= 25 W
2
G
VDSS
ç
×L×I ×
=
?
AS
ç
÷
-
V
= 90 V, L = 8.13 mH
B
V
DD
è
VDSS
DD ø
2004-12-03
5
2SK3934
RESTRICTIONS ON PRODUCT USE
030619EAA
· The information contained herein is subject to change without notice.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
2004-12-03
6
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