2SK3931-01 [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET型号: | 2SK3931-01 |
厂家: | FUJI ELECTRIC |
描述: | N-CHANNEL SILICON POWER MOSFET |
文件: | 总4页 (文件大小:103K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SK3931-01
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220AB
200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Drain(D)
Item
Symbol
Ratings
500
Unit
V
Remarks
Drain-source voltage
VDS
VDSX
ID
500
V
VGS=-30V
Continuous Drain Current
Pulsed Drain Current
11
A
ID(puls]
VGS
IAR
±44
A
Gate(G)
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
±30
V
Source(S)
11
A
Note *1
Note *2
EAS
453.9
mJ
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
=
Maximum Avalanche Energy
Repetitive
Note *2:StartingTch=25°C,IAS=4.4A,L=43mH,
EAR
16.5
mJ
Note *3
VCC=50V,RG=50Ω
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
EAS limited by maximum channel temperature
and avalanch current.
dVDS/dt
dV/dt
PD
20
5
kV/µs
<
VDS 500V
=
kV/µs Note *4
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
165
2.02
+150
Tc=25°C
Ta=25°C
W
Operating and Storage
Temperature range
Tch
°C
°C
Tstg
-55 to +150
<
<
<
Note *4:IF -ID, -di/dt=50A/µs,VCC BVDSS,Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Min.
Typ.
Max. Units
Symbol
BVDSS
VGS(th)
Item
Test Conditions
µ
V
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
ID= 250 A
VGS=0V
VDS=VGS
500
3.0
µ
V
ID= 250 A
5.0
µA
Tch=25°C
VDS=500V VGS=0V
25
Zero Gate Voltage Drain Current
IDSS
µA
Tch=125°C
VDS=400V VGS=0V
250
IGSS
RDS(on)
gfs
VGS=±30V
VDS=0V
ID=5.5A VGS=10V
nA
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
10
100
Ω
S
0.57
9.0
950
130
6.0
16
6.0
33
5.5
0.70
ID=5.5A VDS=25V
VDS=25V
4.5
Ciss
Coss
Crss
td(on)
tr
pF
1425
195
9.0
24
9.0
50
8.3
Output Capacitance
VGS=0V
Reverse Transfer Capacitance
Turn-On Time ton
f=1MH
ns
VCC=300V ID=5.5A
VGS=10V
td(off)
tf
Turn-Off Time toff
RGS=10 Ω
QG
nC
Total Gate Charge
VCC=250V
ID=11A
25
10
38
15
12
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
VGS=10V
8.0
1.10
650
5.5
V
IF=11A VGS=0V Tch=25°C
IF=11A VGS=0V
-di/dt=100A/µs
Tch=25°C
1.50
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
trr
Qrr
ns
µC
Thermalcharacteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max. Units
0.758 °C/W
Thermal resistance
°C/W
62
www.fujielectric.co.jp/fdt/scd
1
2SK3931-01
FUJI POWER MOSFET
Characteristics
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25°C
Allowable Power Dissipation
PD=f(Tc)
30
25
20
15
10
5
200
180
160
140
120
100
80
20V
10V
8.0V
7.0V
6.5V
60
40
VGS=6.0V
20
0
0
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
VDS [V]
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
100
10
1
100
10
1
0.1
0.1
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
VGS[V]
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5.5A,VGS=10V
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS=6.0V
6.5V
7.0V
8.0V
10V
20V
max.
typ.
-50
-25
0
25
50
75
100
125
150
0
5
10
15
20
25
30
Tch [°C]
ID [A]
2
2SK3931-01
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
Typical Gate Charge Characteristics
VGS(th)=f(Tch):VDS=VGS,ID=250µA
VGS=f(Qg):ID=11A,Tch=25°C
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
14
12
10
8
Vcc= 100V
250V
max.
min.
400V
6
4
2
0
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
Qg [nC]
Tch [°C]
Typical Capacitance
Typical Forward Characteristics of Reverse Diode
C=f(VDS):VGS=0V,f=1MHz
IF=f(VSD):80 µs pulse test,Tch=25°C
104
103
102
101
100
100
10
1
Ciss
Coss
Crss
0.1
10-1
100
101
102
103
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VSD [V]
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10Ω
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V
103
102
101
100
500
450
400
350
300
250
200
150
100
50
IAS=4.4A
IAS=6.6A
tf
td(off)
td(on)
IAS=11A
tr
0
10-1
100
101
102
0
25
50
75
100
125
150
starting Tch [°C]
ID [A]
3
2SK3931-01
FUJI POWER MOSFET
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25 °C,Vcc=50V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
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4
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