2SK3870-01 [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | 2SK3870-01 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总4页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3870-01
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
200406
TO-220AB
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching
No secondary breadown
Avalanche-proof
Low on-resistance
Low driving power
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Symbol
Ratings
230
Unit
V
Remarks
Drain(D)
Drain-source voltage
VDS
V
VDSX
ID
230
VGS=-30V
A
Continuous Drain Current
Pulsed Drain Current
40
A
ID(puls]
VGS
IAR
±160
±30
V
Gate(G)
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
A
40
Note *1
Note *2
Source(S)
mJ
EAS
633.1
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
=
Maximum Avalanche Energy
Repetitive
Note *2:StartingTch=25°C,IAS=16A,L=4.09mH,
mJ
EAR
27
Note *3
VCC=48V,RG=50Ω
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
EAS limited by maximum channel temperature
and avalanch current.
kV/µs
dVDS/dt
dV/dt
PD
20
5
<
VDS 230V
=
kV/µs Note *4
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
270
2.02
+150
Tc=25°C
Ta=25°C
W
Operating and Storage
Temperature range
Tch
°C
°C
Tstg
-55 to +150
<
<
<
Note *4:IF -ID, -di/dt=50A/µs,VCC BVDSS,Tch 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
=
=
=
Min.
Typ.
Max. Units
Symbol
BVDSS
VGS(th)
Item
Test Conditions
µ
V
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
230
ID= 250 A
VGS=0V
VDS=VGS
µ
V
3.0
5.0
25
ID= 250 A
µA
VDS=230V VGS=0V
Tch=25°C
Zero Gate Voltage Drain Current
IDSS
250
100
76
Tch=125°C
VDS=184V VGS=0V
VGS=±30V
VDS=0V
ID=20A VGS=10V
ID=20A VDS=25V
VDS=75V
IGSS
RDS(on)
gfs
nA
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
58
24
mΩ
S
12
Ciss
Coss
Crss
td(on)
tr
1880
230
12
2820
345
18
pF
Output Capacitance
VGS=0V
Reverse Transfer Capacitance
Turn-On Time ton
f=1MH
VCC=180V ID=20A
ns
28
42
8.4
12.6
VGS=10V
56
84
td(off)
tf
Turn-Off Time toff
RGS=10 Ω
6
9
42.0
18.0
12.0
63.0
27.0
18.0
QG
nC
Total Gate Charge
VCC=115V
ID=40A
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
VGS=10V
1.10
230
2.5
1.50
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=40A VGS=0V Tch=25°C
IF=40A VGS=0V
-di/dt=100A/µs
Tch=25°C
trr
Qrr
ns
µC
Thermalcharacteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max. Units
0.463 °C/W
Thermal resistance
°C/W
62
www.fujielectric.co.jp/fdt/scd
1
2SK3870-01
FUJI POWER MOSFET
Characteristics
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25°C
Allowable Power Dissipation
PD=f(Tc)
400
300
200
100
0
100
90
80
70
60
50
40
30
20
10
0
20V
10V
8V
7V
6.5V
VGS=5.5V
20 24
0
25
50
75
100
125
150
0
4
8
12
16
VDS [V]
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
100
10
1
100
10
1
0.1
0.1
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
ID [A]
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=20A,VGS=10V
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.25
0.20
0.15
0.10
0.05
0.00
7V
6.5V
VGS=6V
8V
max.
typ.
10V
20V
0
10
20
30
40
50
60
70
80
-50
-25
0
25
50
75
100
125
150
Tch [°C]
ID [A]
2
2SK3870-01
FUJI POWER MOSFET
Typical Gate Charge Characteristics
VGS=f(Qg):ID=40A,Tch=25°C
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
18
16
max.
min.
14
12
10
8
Vcc= 46V
115V
184V
6
4
2
0
0
10
20
30
40
50
60
70
80
-50
-25
0
25
50
75
100
125
150
Qg [nC]
Tch [°C]
Typical Forward Characteristics of Reverse Diode
Typical Capacitance
100 IF=f(VSD):80 µs pulse test,Tch=25°C
C=f(VDS):VGS=0V,f=1MHz
10n
1n
Ciss
10
Coss
100p
10p
1p
1
Crss
0.1
0.00
10-1
100
101
102
103
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VSD [V]
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=180V,VGS=10V,RG=10Ω
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=40A
103
102
101
100
700
600
500
400
300
200
100
0
IAS=16A
td(off)
td(on)
IAS=24A
IAS=40A
tf
tr
10-1
100
101
102
0
25
50
75
100
125
150
starting Tch [°C]
ID [A]
3
2SK3870-01
FUJI POWER MOSFET
Safe operating area
ID=f(VDS):Single Pulse,Tc=25°C
102
101
100
10-1
t=
1µs
10µs
D.C.
100µs
1ms
10ms
100ms
100
101
102
103
VDS [V]
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25°C,Vcc=48V
102
Single Pulse
101
100
10-1
10-2
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
http://www.fujielectric.co.jp/fdt/scd/
4
相关型号：
2SK3872-01SJ
Power Field-Effect Transistor, 40A I(D), 230V, 0.076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FUJI
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