2SK3878 [TOSHIBA]
Silicon N-Channel MOS Type Switching Regulator Applications; 硅N沟道MOS型开关稳压器的应用
| 型号： | 2SK3878 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N-Channel MOS Type Switching Regulator Applications |
| 文件： | 总6页 (文件大小：210K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3878
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)
2SK3878
Switching Regulator Applications
Unit: mm
•
•
•
•
Low drain-source ON resistance: R
= 1.0 Ω (typ.)
DS (ON)
High forward transfer admittance: ⎪Y ⎪ = 7.0 S (typ.)
fs
Low leakage current: I
= 100 μA (max) (V
= 720 V)
DSS
DS
Enhancement model: V = 2.0~4.0 V (V
= 10 V, I = 1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Symbol
Rating
Unit
V
900
900
±30
9
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC
(Note 1)
I
D
1. GATE
Drain current
A
2. DRAIN (HEATSINK)
3. SOURCE
Pulse (Note 1)
I
27
DP
Drain power dissipation (Tc = 25°C)
P
150
W
D
AS
AR
Single pulse avalanche energy
JEDEC
―
E
778
mJ
(Note 2)
JEITA
SC-65
2−16C1B
Avalanche current
I
9
15
A
TOSHIBA
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
150
Weight: 4.6 g (typ.)
ch
Storage temperature range
T
−55~150
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
0.833
50
°C/W
°C/W
th (ch-c)
R
th (ch-a)
1
Note 1: Ensure that the channel temperature does not exceed 150°C
during use of the device.
Note 2:
V
DD
= 90 V, T = 25°C, L = 17.6 mH, R = 25 Ω, I
= 9 A
AR
ch
G
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Handle with care.
3
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2006-11-13
2SK3878
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
= ±30 V, V
= 0 V
⎯
±30
⎯
⎯
⎯
±10
⎯
μA
V
GSS
GS
I = ±10 μA, V
G
DS
Drain-source breakdown voltage
Drain cutoff current
V
V
= 0 V
(BR) GSS
DS
= 720 V, V
I
V
= 0 V
⎯
100
⎯
μA
V
DSS
DS
= 10 mA, V
GS
Drain-source breakdown voltage
Gate threshold voltage
I
= 0 V
900
2.0
⎯
⎯
(BR) DSS
D
GS
= 10 V, I = 1 mA
V
V
V
V
⎯
4.0
1.3
⎯
V
th
DS
GS
DS
D
Drain-source ON resistance
Forward transfer admittance
Input capacitance
R
= 10 V, I = 4 A
1.0
7.0
2200
45
Ω
S
DS (ON)
⎪Y ⎪
D
= 15 V, I = 4 A
3.5
⎯
fs
D
C
C
⎯
iss
V
= 25 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
190
⎯
oss
Rise time
t
r
⎯
⎯
⎯
25
65
20
⎯
⎯
⎯
10 V
GS
0 V
I = 4 A
D
V
V
OUT
Turn-on time
t
on
R
= 100 Ω
L
Switching time
Fall time
ns
t
f
∼
V
400 V
DD
<
Duty 1%, t = 10 μs
w
Turn-off time
t
⎯
⎯
120
60
⎯
⎯
off
Total gate charge
Q
g
(gate-source plus gate-drain)
∼
V
400 V, V
= 10 V, I = 9 A
nC
DD
GS
D
Gate-source charge
Q
⎯
⎯
34
26
⎯
⎯
gs
Gate-drain (“Miller”) charge
Q
gd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
I
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
9
27
A
A
DR
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
(Note 1)
I
DRP
V
I
I
= 9 A, V
= 9 A, V
= 0 V
⎯
−1.7
⎯
V
DSF
DR
DR
GS
GS
t
= 0 V,
1.4
16
μs
μC
rr
dI /dt = 100 A/μs
Q
⎯
DR
rr
Marking
TOSHIBA
K3878
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-13
2SK3878
I
– V
I
– V
D DS
D
DS
10
8
20
COMMON SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
Tc = 25°C
PULSE TEST
15
10
16
12
8
15
6
6
10
5.5
5.25
6
5.5
5
4
4.75
5
2
4
0
V
= 4.5 V
GS
V
= 4.5 V
GS
0
0
2
4
6
8
10
0
0
1
4
8
12
16
20
DRAIN−SOURCE VOLTAGE
V
(V)
DRAIN−SOURCE VOLTAGE
V
(V)
DS
DS
I
– V
V
– V
DS GS
D
GS
20
16
12
8
20
16
12
8
COMMON SOURCE
= 20 V
COMMON SOURCE
Tc = 25°C
PULSE TEST
V
DS
PULSE TEST
25
I
= 9 A
D
100
Tc = −55°C
4.5
2.3
4
4
0
0
0
2
4
6
8
10
4
8
12
16
20
GATE−SOURCE VOLTAGE
V
GS
(V)
GATE−SOURCE VOLTAGE
V
GS
(V)
R
− I
D
DS (ON)
⎪Y ⎪ − I
fs
D
10
100
COMMON SOURCE
Tc = 25°C
COMMON SOURCE
= 20 V
V
DS
PULSE TEST
PULSE TEST
V
= 10 V
GS
1
10
Tc = −55°C
100
25
1
0.1
0.1
10
100
1
10
100
DRAIN CURRENT
I
(A)
DRAIN CURRENT
I
(A)
D
D
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2006-11-13
2SK3878
R
− Tc
I
− V
DS
DS (ON)
DR
5
4
3
2
1
0
100
10
1
COMMON SOURCE
COMMON SOURCE
V
= 10 V
GS
PULSE TEST
Tc = 25°C
PULSE TEST
I
= 9 A
D
4.5
2.3
10
1
5
3
V
= 0 V
GS
0.1
−80
−40
0
40
80
120
160
0
−0.4
−0.8
−1.2
−1.6
CASE TEMPERATURE Tc (°C)
DRAIN−SOURCE VOLTAGE
V
(V)
DS
C − V
V
− Tc
th
DS
10000
5
4
3
2
1
0
C
iss
1000
100
10
C
oss
C
rss
COMMON SOURCE
= 0 V
f = 1 MHz
COMMON SOURCE
= 10 V
V
GS
V
DS
= 1 mA
I
D
Tc = 25°C
PULSE TEST
1
0.1
1
10
100
−80
−40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
DRAIN−SOURCE VOLTAGE
V
(V)
DS
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
P
− Tc
D
200
160
120
80
500
20
COMMON SOURCE
= 9 A
I
D
Tc = 25°C
V
DS
PULSE TEST
400
300
200
100
16
12
8
100
V
= 400 V
200
DS
V
GS
40
4
0
0
0
0
0
100
40
80
120
160
200
20
40
60
80
CASE TEMPERATURE
Tc (°C)
TOTAL GATE CHARGE
Q
g
(nC)
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2006-11-13
2SK3878
r
th
− t
w
10
1
Duty = 0.5
0.2
0.1
0.1
0.01
0.05
0.02
P
DM
0.01
t
SINGLE PULSE
T
Duty = t/T
R
= 0.833°C/W
th (ch-c)
0.001
10 μ
100 μ
1 m
10 m
100 m
1
10
PULSE WIDTH
t
w
(S)
SAFE OPERATING AREA
E
AS
– T
ch
100
10
1000
I
max (PULSE) *
D
800
600
400
200
0
100 μs *
I
max (CONTINUOUS)
D
1 ms *
DC OPERATION
Tc = 25°C
1
0.1
*
SINGLE NONPETITIVE PULSE
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
V
max
25
50
75
100
125
150
DSS
0.01
1
10
100
1000
10000
CHANNEL TEMPERATURE (INITIAL)
T
ch
(°C)
DRAIN−SOURCE VOLTAGE
V
(V)
DS
B
VDSS
15 V
−15 V
I
AR
V
V
DD
DS
TEST CIRCUIT
WAVE FORM
⎛
⎜
⎜
⎝
⎞
1
2
B
VDSS
2
R
V
= 25 Ω
G
⎟
⎟
⎠
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
= 90 V, L = 17.6 mH
B
VDSS
DD
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2006-11-13
2SK3878
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-13
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