2SK3873-01 [FUJI]
N-CHANNEL SILICON POWER MOSFET; N沟道硅功率MOSFET
| 型号： | 2SK3873-01 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | N-CHANNEL SILICON POWER MOSFET |
| 文件： | 总4页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SK3873-01
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
200407
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching, Low on-resistance
Low driving power, Avalanche-proof
No secondary breakdown
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Equivalent circuit schematic
Item
Symbol
Ratings
280
Unit
V
Remarks
Drain(D)
Drain-source voltage
VDS
V
VDSX
ID
280
VGS=-30V
A
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
56
A
ID(puls]
VGS
IAR
±224
±30
Gate(G)
V
A
Maximum Avalanche current
Non-Repetitive
56
Note *1
Note *2
Source(S)
mJ
EAS
1039.1
<
Note *1:Tch 150°C,Repetitive and Non-repetitive
=
Maximum Avalanche Energy
Repetitive
Note *2:StartingTch=25°C,IAS=23A,L=3.37mH,
mJ
EAR
41
Note *3
VCC=48V,RG=50Ω
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
EAS limited by maximum channel temperature
and Avalanche current.
kV/µs
dVDS/dt
dV/dt
PD
20
5
<
VDS 280V
=
kV/µs Note *4
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
410
2.50
+150
Tc=25°C
Ta=25°C
W
Operating and Storage
Temperature range
Tch
°C
°C
Tstg
-55 to +150
<
<
<
Note *4:IF -ID, -di/dt=50A/µs,VCC BVDSS, Tch 150°C
Electrical characteristics (Tc =25°C unless otherwise specified)
=
Max. Units
V
=
=
Min.
Typ.
Symbol
BVDSS
VGS(th)
Test Conditions
Item
µ
ID= 250 A
VGS=0V
VDS=VGS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
280
µ
ID= 250 A
V
3.0
5.0
25
µA
Tch=25°C
VDS=280V VGS=0V
VDS=224V VGS=0V
Zero Gate Voltage Drain Current
IDSS
Tch=125°C
250
100
61
IGSS
RDS(on)
gfs
VGS=±30V
VDS=0V
nA
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
ID=28A VGS=10V
ID=28A VDS=25V
VDS=75V
51
24
mΩ
S
12
Ciss
Coss
Crss
td(on)
tr
3600
530
35
5400
795
pF
VGS=0V
Output Capacitance
52.5
f=1MHz
Reverse Transfer Capacitance
Turn-On Time ton
ns
40
60
87
VCC=180V ID=28A
VGS=10V
58
80
120
15
td(off)
tf
Turn-Off Time toff
RGS=10 Ω
10
80
120
45
QG
nC
VCC=140V
ID=56A
Total Gate Charge
30
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
25
38
VGS=10V
1.20
400
4.5
1.50
V
IF=56A VGS=0V Tch=25°C
IF=56A VGS=0V
-di/dt=100A/µs
Tch=25°C
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
trr
Qrr
ns
µC
Thermal characteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min.
Typ.
Max. Units
0.305 °C/W
Thermal resistance
°C/W
50.0
www.fujielectric.co.jp/fdt/scd
1
2SK3873-01
FUJI POWER MOSFET
Characteristics
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
Allowable Power Dissipation
PD=f(Tc)
100
90
80
70
60
50
40
30
20
10
0
500
450
400
350
300
250
200
150
100
50
8V
20V
10V
7V
6.5V
VGS=6.0V
0
0
1
2
3
4
5
6
7
8
9
10
0
25
50
75
100
125
150
VDS [V]
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
100
10
1
100
10
1
0.1
0.1
0.1
1
10
100
0
1
2
3
4
5
6
7
8
9
10
VGS[V]
ID [A]
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=28A,VGS=10V
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
0.200
0.175
0.150
0.125
0.100
0.075
0.050
0.025
0.000
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
6.5V
7V
VGS=6V
8V
10V
20V
max.
typ.
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
90
100
Tch [°C]
ID [A]
2
2SK3873-01
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
Typical Gate Charge Characteristics
VGS(th)=f(Tch):VDS=VGS,ID=250 µA
VGS=f(Qg):ID=56A,Tch=25 °C
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
14
12
10
8
Vcc= 56V
140V
max.
min.
224V
6
4
2
0
-50
-25
0
25
50
75
100
125
150
0
10 20 30 40 50 60 70 80 90 100 110 120 130 140
Tch [°C]
Qg [nC]
Typical Forward Characteristics of Reverse Diode
Typical Capacitance
IF=f(VSD):80 µs pulse test,Tch=25°C
C=f(VDS):VGS=0V,f=1MHz
104
103
102
101
100
100
10
1
Ciss
Coss
Crss
0.1
10-1
100
101
102
103
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VSD [V]
VDS [V]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=56A
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=180V,VGS=10V,RG=10 Ω
104
103
102
101
100
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
IAS=23A
IAS=34A
IAS=56A
tr
td(off)
td(on)
tf
10-1
100
101
102
103
0
25
50
75
100
125
150
starting Tch [°C]
ID [A]
3
2SK3873-01
FUJI POWER MOSFET
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25 °C,Vcc=48V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
http://www.fujielectric.co.jp/fdt/scd/
4
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