2SK3875-01 [FUJI]
FUJI POWER MOSFET Super FAP-G Series; FUJI功率MOSFET超级FAP -G系列型号: | 2SK3875-01 |
厂家: | FUJI ELECTRIC |
描述: | FUJI POWER MOSFET Super FAP-G Series |
文件: | 总4页 (文件大小:105K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SK3875-01
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
200407
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching, Low on-resistance
Low driving power, Avalanche-proof
No secondary breakdown
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DCconverters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Symbol
Ratings
900
Unit
V
Remarks
VDS
Equivalent circuit schematic
VDSX
ID
900
V
VGS=-30V
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Non-Repetitive
13
A
Drain(D)
ID(puls]
VGS
±52
A
±30
V
Note *1
Maximum Avalanche current
Repetitive
IAS
13
A
Gate(G)
Source(S)
Maximum Avalanche current
Non-Repetitive
IAR
6.5
A
EAS
1006
mJ
Note *2
Note *3
<
Note *1:Tch 150°C
=
Maximum Avalanche Energy
Repetitive
Note *2:StartingTch=25°C,IAS=5.2A,L=67.5mH,
EAR
35.5
mJ
VCC=100V,RG=50Ω
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
EAS limited by maximum channel temperature
and Avalanche current.
dVDS/dt
dV/dt
PD
40
5
<
kV/µs
VDS 900V
=
kV/µs Note *4
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Thermal impedance’
graph.
355
Tc=25°C
Ta=25°C
W
2.50
Operating and Storage
Temperature range
Tch
+150
-55 to +150
°C
°C
Tstg
<
<
<
Note *4:IF -ID, -di/dt=50A/µs,VCC BVDSS, Tch 150°C
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)
Symbol
Min. Typ.
Max. Units
Item
Test Conditions
BVDSS
VGS(th)
V
µ
Drain-Source Breakdown Voltage
Gate Threshold Voltage
ID= 250 A
VGS=0V
VDS=VGS
900
3.0
V
µ
5.0
ID= 250 A
µA
25
250
100
VDS=900V VGS=0V
Tch=25°C
Zero Gate Voltage Drain Current
IDSS
Tch=125°C
VDS=720V VGS=0V
VGS=±30V
VDS=0V
ID=6.5A VGS=10V
IGSS
RDS(on)
gfs
nA
Ω
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
0.79
12
1.00
6.0
ID=6.5A VDS=25V
S
Ciss
Coss
Crss
td(on)
tr
1750
220
13
2625
330
pF
VDS=25V
Output Capacitance
VGS=0V
19.5
Reverse Transfer Capacitance
Turn-On Time ton
f=1MHz
ns
20
30
VCC=600V ID=6.5A
VGS=10V
12
18
60
90
td(off)
tf
Turn-Off Time toff
RGS=10 Ω
15
22.5
69
46
QG
nC
Total Gate Charge
VCC=450V
ID=13A
14
21
QGS
QGD
VSD
Gate-Source Charge
Gate-Drain Charge
17
26
VGS=10V
1.10
4.5
25
1.50
V
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
IF=13A VGS=0V Tch=25°C
IF=13A VGS=0V
-di/dt=100A/µs
Tch=25°C
trr
Qrr
µs
µC
Thermal characteristics
Item
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
Min.
Typ.
Max. Units
°C/W
0.352
Thermal resistance
°C/W
50.0
channel to ambient
www.fujielectric.co.jp/fdt/scd
1
2SK3875-01
FUJI POWER MOSFET
Characteristics
Typical Output Characteristics
ID=f(VDS):80 µs pulse test,Tch=25 °C
Allowable Power Dissipation
PD=f(Tc)
400
350
300
250
200
150
100
50
20
16
12
8
20V
6.5V
4
VGS=5.5V
0
0
0
25
50
75
100
125
150
0
4
8
12
16
20
VDS [V]
Tc [°C]
Typical Transfer Characteristic
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C
Typical Transconductance
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C
100
10
1
100
10
1
0.1
0.1
0.1
0
1
2
3
4
5
6
7
8
9
10
1
10
100
VGS[V]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs pulse test,Tch=25°C
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=6.5A,VGS=10V
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
VGS=5.5V
6.0V
1.4
1.2
1.0
0.8
0.6
6.5V
8.0V
10V
20V
max.
typ.
0
5
10
15
20
-50
-25
0
25
50
75
100
125
150
Tch [°C]
ID [A]
2
2SK3875-01
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch
Typical Gate Charge Characteristics
VGS(th)=f(Tch):VDS=VGS,ID=250µA
VGS=f(Qg):ID=13A,Tch=25 °C
14
12
10
8
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Vcc= 180V
450V
720V
max.
min.
6
4
2
0
-50
-25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
Tch [°C]
Qg [nC]
Typical Forward Characteristics of Reverse Diode
Typical Capacitance
IF=f(VSD):80 µs pulse test,Tch=25°C
C=f(VDS):VGS=0V,f=1MHz
104
103
102
101
100
100
10
1
Ciss
Coss
Crss
0.1
10-1
100
101
102
103
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VSD [V]
VDS [V]
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10 Ω
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=100V
103
102
101
100
1200
1000
800
600
400
200
0
IAS=5.2A
tf
td(off)
IAS=7.8A
IAS=13A
td(on)
tr
10-1
100
101
102
0
25
50
75
100
125
150
starting Tch [°C]
ID [A]
3
2SK3875-01
FUJI POWER MOSFET
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch):Vcc=100V
16
14
12
10
8
Non-Repetitive
(Single Pulse)
Repetitive
6
4
2
0
0
25
50
75
100
125
150
175
200
starting Tch [°C]
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25 °C,Vcc=100V
102
101
100
10-1
10-2
Single Pulse
10-8
10-7
10-6
10-5
10-4
10-3
10-2
tAV [sec]
(Maximum Transient Thermal Impedance)
(Zth(ch-c)=f(t):D=0)
101
100
10-1
10-2
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
t [sec]
http://www.fujielectric.co.jp/fdt/scd/
4
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