2SK3875-01 [FUJI]

FUJI POWER MOSFET Super FAP-G Series; FUJI功率MOSFET超级FAP -G系列
2SK3875-01
型号: 2SK3875-01
厂家: FUJI ELECTRIC    FUJI ELECTRIC
描述:

FUJI POWER MOSFET Super FAP-G Series
FUJI功率MOSFET超级FAP -G系列

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
文件: 总4页 (文件大小:105K)
中文:  中文翻译
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2SK3875-01  
N-CHANNEL SILICON POWER MOSFET  
Outline Drawings (mm)  
200407  
FUJI POWER MOSFET  
Super FAP-G Series  
Features  
High speed switching, Low on-resistance  
Low driving power, Avalanche-proof  
No secondary breakdown  
Applications  
Switching regulators  
UPS (Uninterruptible Power Supply)  
DC-DCconverters  
Maximum ratings and characteristic  
Absolute maximum ratings  
(Tc=25°C unless otherwise specified)  
Item  
Drain-source voltage  
Symbol  
Ratings  
900  
Unit  
V
Remarks  
VDS  
Equivalent circuit schematic  
VDSX  
ID  
900  
V
VGS=-30V  
Continuous Drain Current  
Pulsed Drain Current  
Gate-Source Voltage  
Non-Repetitive  
13  
A
Drain(D)  
ID(puls]  
VGS  
±52  
A
±30  
V
Note *1  
Maximum Avalanche current  
Repetitive  
IAS  
13  
A
Gate(G)  
Source(S)  
Maximum Avalanche current  
Non-Repetitive  
IAR  
6.5  
A
EAS  
1006  
mJ  
Note *2  
Note *3  
<
Note *1:Tch 150°C  
=
Maximum Avalanche Energy  
Repetitive  
Note *2:StartingTch=25°C,IAS=5.2A,L=67.5mH,  
EAR  
35.5  
mJ  
VCC=100V,RG=50  
Maximum Avalanche Energy  
Maximum Drain-Source dV/dt  
Peak Diode Recovery dV/dt  
Max. Power Dissipation  
EAS limited by maximum channel temperature  
and Avalanche current.  
dVDS/dt  
dV/dt  
PD  
40  
5
<
kV/µs  
VDS 900V  
=
kV/µs Note *4  
See to the ‘Avalanche Energy’ graph  
Note *3:Repetitive rating:Pulse width limited by  
maximum channel temperature.  
See to the ‘Transient Thermal impedance’  
graph.  
355  
Tc=25°C  
Ta=25°C  
W
2.50  
Operating and Storage  
Temperature range  
Tch  
+150  
-55 to +150  
°C  
°C  
Tstg  
<
<
<
Note *4:IF -ID, -di/dt=50A/µs,VCC BVDSS, Tch 150°C  
=
=
=
Electrical characteristics (Tc =25°C unless otherwise specified)  
Symbol  
Min. Typ.  
Max. Units  
Item  
Test Conditions  
BVDSS  
VGS(th)  
V
µ
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
ID= 250 A  
VGS=0V  
VDS=VGS  
900  
3.0  
V
µ
5.0  
ID= 250 A  
µA  
25  
250  
100  
VDS=900V VGS=0V  
Tch=25°C  
Zero Gate Voltage Drain Current  
IDSS  
Tch=125°C  
VDS=720V VGS=0V  
VGS=±30V  
VDS=0V  
ID=6.5A VGS=10V  
IGSS  
RDS(on)  
gfs  
nA  
Gate-Source Leakage Current  
Drain-Source On-State Resistance  
Forward Transconductance  
Input Capacitance  
0.79  
12  
1.00  
6.0  
ID=6.5A VDS=25V  
S
Ciss  
Coss  
Crss  
td(on)  
tr  
1750  
220  
13  
2625  
330  
pF  
VDS=25V  
Output Capacitance  
VGS=0V  
19.5  
Reverse Transfer Capacitance  
Turn-On Time ton  
f=1MHz  
ns  
20  
30  
VCC=600V ID=6.5A  
VGS=10V  
12  
18  
60  
90  
td(off)  
tf  
Turn-Off Time toff  
RGS=10  
15  
22.5  
69  
46  
QG  
nC  
Total Gate Charge  
VCC=450V  
ID=13A  
14  
21  
QGS  
QGD  
VSD  
Gate-Source Charge  
Gate-Drain Charge  
17  
26  
VGS=10V  
1.10  
4.5  
25  
1.50  
V
Diode forward on-voltage  
Reverse recovery time  
Reverse recovery charge  
IF=13A VGS=0V Tch=25°C  
IF=13A VGS=0V  
-di/dt=100A/µs  
Tch=25°C  
trr  
Qrr  
µs  
µC  
Thermal characteristics  
Item  
Symbol  
Rth(ch-c)  
Rth(ch-a)  
Test Conditions  
channel to case  
Min.  
Typ.  
Max. Units  
°C/W  
0.352  
Thermal resistance  
°C/W  
50.0  
channel to ambient  
www.fujielectric.co.jp/fdt/scd  
1
2SK3875-01  
FUJI POWER MOSFET  
Characteristics  
Typical Output Characteristics  
ID=f(VDS):80 µs pulse test,Tch=25 °C  
Allowable Power Dissipation  
PD=f(Tc)  
400  
350  
300  
250  
200  
150  
100  
50  
20  
16  
12  
8
20V  
6.5V  
4
VGS=5.5V  
0
0
0
25  
50  
75  
100  
125  
150  
0
4
8
12  
16  
20  
VDS [V]  
Tc [°C]  
Typical Transfer Characteristic  
ID=f(VGS):80 µs pulse test,VDS=25V,Tch=25°C  
Typical Transconductance  
gfs=f(ID):80 µs pulse test,VDS=25V,Tch=25°C  
100  
10  
1
100  
10  
1
0.1  
0.1  
0.1  
0
1
2
3
4
5
6
7
8
9
10  
1
10  
100  
VGS[V]  
ID [A]  
Typical Drain-Source on-state Resistance  
RDS(on)=f(ID):80 µs pulse test,Tch=25°C  
Drain-Source On-state Resistance  
RDS(on)=f(Tch):ID=6.5A,VGS=10V  
3.00  
2.75  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
0.25  
0.00  
VGS=5.5V  
6.0V  
1.4  
1.2  
1.0  
0.8  
0.6  
6.5V  
8.0V  
10V  
20V  
max.  
typ.  
0
5
10  
15  
20  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
Tch [°C]  
ID [A]  
2
2SK3875-01  
FUJI POWER MOSFET  
Gate Threshold Voltage vs. Tch  
Typical Gate Charge Characteristics  
VGS(th)=f(Tch):VDS=VGS,ID=250µA  
VGS=f(Qg):ID=13A,Tch=25 °C  
14  
12  
10  
8
7.0  
6.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Vcc= 180V  
450V  
720V  
max.  
min.  
6
4
2
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
50  
60  
70  
Tch [°C]  
Qg [nC]  
Typical Forward Characteristics of Reverse Diode  
Typical Capacitance  
IF=f(VSD):80 µs pulse test,Tch=25°C  
C=f(VDS):VGS=0V,f=1MHz  
104  
103  
102  
101  
100  
100  
10  
1
Ciss  
Coss  
Crss  
0.1  
10-1  
100  
101  
102  
103  
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
VSD [V]  
VDS [V]  
Typical Switching Characteristics vs. ID  
t=f(ID):Vcc=600V,VGS=10V,RG=10 Ω  
Maximum Avalanche Energy vs. starting Tch  
E(AV)=f(starting Tch):Vcc=100V  
103  
102  
101  
100  
1200  
1000  
800  
600  
400  
200  
0
IAS=5.2A  
tf  
td(off)  
IAS=7.8A  
IAS=13A  
td(on)  
tr  
10-1  
100  
101  
102  
0
25  
50  
75  
100  
125  
150  
starting Tch [°C]  
ID [A]  
3
2SK3875-01  
FUJI POWER MOSFET  
Maximum Avalanche Current vs. starting Tch  
I(AV)=f(starting Tch):Vcc=100V  
16  
14  
12  
10  
8
Non-Repetitive  
(Single Pulse)  
Repetitive  
6
4
2
0
0
25  
50  
75  
100  
125  
150  
175  
200  
starting Tch [°C]  
Maximum Avalanche Current Pulsewidth  
IAV=f(tAV):starting Tch=25 °C,Vcc=100V  
102  
101  
100  
10-1  
10-2  
Single Pulse  
10-8  
10-7  
10-6  
10-5  
10-4  
10-3  
10-2  
tAV [sec]  
(Maximum Transient Thermal Impedance)  
(Zth(ch-c)=f(t):D=0)  
101  
100  
10-1  
10-2  
10-3  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
t [sec]  
http://www.fujielectric.co.jp/fdt/scd/  
4

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