1MBH75D-060S_04 [FUJI]
600V / 75A Molded Package; 600V / 75A塑模封装
| 型号： | 1MBH75D-060S_04 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | 600V / 75A Molded Package |
| 文件： | 总5页 (文件大小：452K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Molded IGBT
1MBH75D-060S
600V / 75A Molded Package
Features
· Small molded package
· Low power loss
· Soft switching with low switching surge and noise
· High reliability, high ruggedness (RBSOA, SCSOA etc.)
· Comprehensive line-up
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C)
Equivalent Circuit Schematic
IGBT + FWD
Rating
600
Item
Symbol
VCES
VGES
IC25
IC100
Icp
Unit
V
Collector-Emitter voltage
Gate-Emitter voltaga
C:Collector
±20
V
83
Collector
current
DC
Tc=25°C
Tc=100°C
Tc=25°C
A
75
A
225
1ms
A
310
Max. power dissipation (IGBT)
Max. power dissipation (FWD)
Operating temperature
Storage temperature
PC
W
W
°C
°C
N·cm
G:Gate
180
PC
+150
-40 to +150
58.8 to 78.4
Tj
Tstg
E:Emitter
Screw torque
-
Electrical characteristics (at Tc=25°C unless otherwise specified)
Item
Symbol
Characteristics
Conditions
Unit
Min.
Typ.
Max.
1.0
10
6.0
2.9
–
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
ton *
tr *
–
–
–
–
VGE=0V, VCE=600V
VCE=0V, VGE=±20V
VCE=20V, IC=75mA
VGE=15V, IC=75A
VGE=0V
mA
µA
V
4.0
5.0
2.4
3700
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
pF
Output capacitance
350
190
–
VCE=25V
Reverse transfer capacitance
Turn-on time
–
f=1MHz
0.15
–
VCC=300V, IC=75A
VGE=±15V
µs
µs
0.09
0.03
0.50
0.10
0.15
0.09
0.03
0.50
0.10
2.0
–
trr2
–
RG=24 ohm
Turn-off time
Switching
toff
0.62
(Half Bridge)
tf
0.17
–
Inductance Load
VCC=300V, IC=75A
VGE=+15V
Time
Turn-on time
ton *
tr *
–
trr2
–
RG=6 ohm
Turn-off time
toff
0.62
0.17
2.5
0.10
(Half Bridge)
tf
Inductance Load
IF=75A, VGE=0V
IF=75A, VGE=-10V,
VR=300V, di/dt=100A/µs
FWD forward on voltage
Reverse recovery time
VF
V
trr
0.06
µs
*Turn-on characteristics include trr2. See a figure in next page.
Thermal resistance characteristics
Item
Symbol
Characteristics
Conditions
Unit
Min.
Typ.
Max.
Thermal resistance
Rth(j-c)
Rth(j-c)
IGBT
FWD
–
–
–
–
0.40
0.69
°C/W
°C/W
Molded IGBT
1MBH75D-060S
Outline drawings, mm
TO-3PL
Gate
Collector
Emitter
Switching waveform (Inductance load)
Mesurement circuit
1MBH75D-060S
Molded IGBT
Characteristics
Collector current vs. Collector-Emitter voltage
Tj=125°C
Collector current vs. Collector-Emitter voltage
Tj=25°C
Collector-Emitter Voltage : VCE (V)
Collector-Emitter Voltage : VCE (V)
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj=25°C
Collector-Emitter voltage vs. Gate-Emitter voltage
Tj=125°C
Gate-Emitter Voltage : VGE (V)
Gate-Emitter Voltage : VGE (V)
Switching time vs. Collector current
Switching time vs. Collector current
VCC=300V, RG=24Ω, VGE=±15V, Tj=125°C
VCC=300V, RG=6Ω, VGE=+15V, Tj=125°C
Collector current : IC (A)
Collector current : IC (A)
IGBT Module
1MBH75D-060S
Characteristics
Switching time vs. RG
Switching time vs. RG
VCC=300V, IC=75A, VGE=±15V, Tj=125°C
VCC=300V, IC=75A, VGE=+15V, Tj=125°C
Gate resistance : RG (Ω)
Gate resistance : RG (Ω)
Capacitance vs. Collector-Emitter voltage
Tj=25°C
Dynamic input characteristics
Tj=25°C
Collector-Emitter Voltage : VCE (V)
Gate charge : Qg (nc)
Reverse Biased Safe Operating Area
<
<
Forward Bias Safe Operating Area
RG=6Ω, +VGE 20V, -VGE=15V, Tj 125°C
=
=
Collector-Emitter voltage : VCE (V)
Collector-Emitter voltage : VCE (V)
1MBH75D-060S
IGBT Module
Characteristics
Reverse recovery time vs. Forward current
Reverse recovery current vs. Forward current
VR=300V, -di/dt=100A/µsec
VR=300V, -di/dt=100A/µsec
Forward current : IF (Α)
Forward current : IF (Α)
Reverse recovery chracteristics vs. -di/dt
VR=300V, IF=75A, Tj=125°C
Forward voltage vs. Forward current
-di/dt [Α/µsec]
Forward Voltage : VF (V)
Transient thermal resistance
Pulse width : PW (sec)
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FUJI
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