1MBI1000VXB-170EH-54 [FUJI]
Insulated Gate Bipolar Transistor;
| 型号： | 1MBI1000VXB-170EH-54 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总9页 (文件大小：826K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
http://www.fujielectric.com/products/semiconductor/
1MBI1000VXB-170EH-54
IGBT MODULE (V series)
IGBT Modules
1700V / 1000A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
NPC 3-level Inverter
Active PFC
Industrial machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at T =25°C unless otherwise specified)
C
Items
Symbols
Conditions
Maximum ratings
Units
Collector-Emitter voltage
Gate-Emitter voltage
V
CES
1700
±20
V
V
VGES
T
C
C
=25°C
1400
1000
2000
1000
2000
6250
1700
1000
2000
175
I
C
C
Continuous
1ms
T
=100°C
Collector current
I
pluse
A
-I
-I
C
C
pluse
1ms
Collector Power Dissipation
Reverse voltage for FWD
P
C
R
1 device
W
V
V
I
F
Continuous
1ms
Forword current for FWD
Junction temperature
A
I
F pulse
T
j
Operating junction temperature
(under switching conditions)
Tjop
150
°C
Case temperature
TC
150
Storage temperature
Tstg
-40 ~ +150
between terminal and copper base (*1)
between thermistor and others (*2)
Mounting
Main Terminals
Sense Terminals
Isolation voltage
V
iso
AC : 1min.
4000
VAC
N m
-
-
-
M5
M8
M4
6.0
10.0
2.1
Screw Torque
(*3)
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable Value : Mounting
Recommendable Value : Main Terminals
3.0 ~ 6.0 Nm (M5)
8.0 ~ 10.0 Nm (M8)
Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4)
8077a
JUNE 2015
1
1MBI1000VXB-170EH-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at T= 25°C unless otherwise specified)
j
Characteristics
Units
Items
Symbols
Conditions
min.
typ.
max.
V
V
CE = 1700V
GE = 0V
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
I
I
CES
-
-
6.0
mA
nA
V
VCE = 0V
GES
-
-
1200
7.0
VGE=±20V
VCE = 20V
V
GE(th)
6.0
6.5
IC
= 1000mA
T
T
T
T
T
T
j
j
j
j
j
j
= 25°C
=125°C
=150°C
= 25°C
=125°C
=150°C
-
-
2.10
2.50
2.55
2.00
2.40
2.45
1.17
94
2.55
V
CE(sat)
-
(terminal) (*4)
-
I
V
C
= 1000A
GE=15V
Collector-Emitter saturation voltage
V
-
-
2.45
V
(chip)
CE(sat)
-
-
Internal gate resistance
Input capacitance
R
C
G (int)
ies
-
-
Ω
V
CE=10V, VGE=0V,f=1MHz
-
-
-
-
-
-
-
-
-
nF
t
t
t
t
t
on
1250
500
-
V
I
V
R
CC = 900V
= 1000A
GE = ±15V
Turn-on time
Turn-off time
r
-
C
r (i)
off
f
150
-
nsec
G
= +1.2 / -1.8 Ω
= 60nH
1550
150
-
L
S
-
Tj
Tj
Tj
Tj
Tj
Tj
= 25°C
=125°C
=150°C
= 25°C
=125°C
=150°C
1.95
2.20
2.15
1.85
2.10
2.05
240
2.40
VF
-
(terminal) (*4)
-
I
V
F
= 1000A
GE=0V
Forward on voltage
V
-
-
2.30
V
(chip)
F
-
-
Reverse recovery time
Reverse Current
t
I
rr
R
I
F
= 1000A
-
nsec
mA
V
CE = 1700V
-
-
-
-
3.0
Tj
Tj
Tj
Tj
Tj
Tj
= 25°C
=125°C
=150°C
= 25°C
=125°C
=150°C
1.95
2.20
2.15
1.85
2.10
2.05
240
2.40
VF
-
(terminal) (*4)
-
I
V
F
= 1000A
GE=0V
Forward on voltage
V
-
-
2.30
V
(chip)
F
-
-
-
Reverse recovery time
Resistance
t
rr
I
F
= 1000A
-
-
nsec
Ω
T = 25°C
5000
495
-
R
T = 100°C
T = 25/50°C
465
3305
520
3450
B value
B
3375
K
Note *4: Fuji defined VCE value of terminal by using Sense C1 and Sense C2E1 for Upper arm and Sense C2E1 and Sense E2 for Lower arm.
Thermal resistance characteristics
Characteristics
Items
Symbols Conditions
Units
min.
typ.
max.
0.024
0.048
0.048
-
Inverter IGBT
-
-
-
-
-
-
-
Thermal resistance(1device)
R
R
th(j-c)
Inverse Diode
FWD
°C/W
Contact thermal resistance (1device) (*5)
th(c-f)
with Thermal Compound
0.0083
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
1MBI1000VXB-170EH-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
2000
2000
V
GE=20V
15V
15V
VGE=20V
1800
1600
1400
1200
1000
800
1800
1600
1400
1200
1000
800
12V
12V
10V
10V
600
600
8V
400
400
8V
200
200
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter voltage: VCE [V]
Collector-Emitter voltage: VCE [V]
Collector current vs. Collector-Emitter voltage (typ.)
GE= 15V / chip
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
V
2000
1800
1600
1400
1200
1000
800
10
125°C
Tj=25°C
8
150°C
6
4
600
Ic=2000A
Ic=1000A
Ic=500A
400
2
0
200
0
0
1
2
3
4
5
5
10
15
20
25
Collector-Emitter Voltage: VCE [V]
Gate-Emitter Voltage: VGE [V]
Dynamic Gate Charge (typ.)
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
GE= 0V, ƒ= 1MHz, Tj= 25°C
V
Vcc=900V, Ic=1000A, Tj= 25°C
1000
100
10
20.00
1250
1000
750
VCE
15.00
10.00
5.00
Cies
500
250
0.00
0
VGE
-5.00
-10.00
-15.00
-20.00
Cres
-250
-500
-750
-1000
Coes
1
0
5
10
15
20
25
30
-15000
-5000
5000
[nC]
15000
Collector-Emitter voltage: VCE [V]
Gate charge: Q
g
3
1MBI1000VXB-170EH-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Switching time vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, RG=+1.2/-1.8Ω, Tj=25°C
Vcc=900V, VGE=±15V, R
G
=+1.2/-1.8Ω, Tj=125°C, 150°C
10000
10000
toff
ton
toff
ton
1000
100
10
1000
100
10
tr
tr
tf
tf
Tj=125oC
Tj=150oC
0
500
1000
1500
2000
2500
0
500
1000
1500
2000
2500
Collector current: Ic [A]
Collector current: Ic [A]
Switching loss vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Vcc=900V, VGE=±15V, R
G
=+1.2/-1.8Ω, Tj=125°C, 150°C
Vcc=900V, Ic=1000A, VGE=±15V, Tj=125°C, 150°C
10000
900
Tj=125oC
Tj=150oC
800
700
600
500
400
300
200
100
0
toff
tr
tf
1000
100
10
ton
Eoff
Eon
Err
Tj=125oC
Tj=150oC
0
500
1000
1500
2000
2500
0.1
1
10
Collector current: Ic [A]
Gate resistance: R [ Ω]
G
Switching loss vs. Gate resistance (typ.)
Reverse bias safe operating area (max.)
Vcc=900V, Ic=1000A, VGE=±15V, Tj=125°C, 150°C
1200
+VGE=15V, -VGE=±15V, R
G
=+1.2/-1.8Ω, Tj=150°C
2500
Tj=125oC
Tj=150oC
1000
2000
1500
Eon
800
600
Notice)
1000
Eoff
Switching characteristics of VCE is
defined between Sense C1 and
Sense C2E1 for Upper arm and
Sense C2E1 and Sense E2 for
Lower arm.
400
500
0
200
Err
0
0
1
10
0
500
1000
1500
2000
Collector-Emitter voltage: VCE [V]
Gate resistance: R [ Ω]
G
4
1MBI1000VXB-170EH-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[FWD]
[FWD]
Reverse Recovery Characteristics (typ.)
Forward Current vs. Forward Voltage (typ.)
chip
Vcc=900V, VGE=±15V, R
G
=+1.2/-1.8Ω, Tj=25°C
2000
1800
1600
1400
1200
1000
800
10000
Tj=25°C
1000
100
10
Irr
trr
125°C
600
400
150°C
1
200
0
0
2
3
4
0
500
1000
1500
2000
[A]
2500
Forward on voltage: V
F
[V]
Forward current: I
F
[FWD]
[Inverse Diode]
Reverse Recovery Characteristics (typ.)
Forward Current vs. Forward Voltage (typ.)
chip
Vcc=900V, VGE=±15V, RG=+1.2/-1.8Ω, Tj=125°C, 150°C
10000
2000
Tj=125oC
Tj=150oC
1800
1600
1400
1200
1000
800
Tj=25°C
Irr
trr
1000
100
10
125°C
600
400
150°C
1
200
0
0
500
1000
1500
2000
2500
0
2
3
4
Forward current: I
F
[A]
Forward on voltage: V
F
[V]
[FWD]
[Inverse Diode]
FWD safe operating area (max.)
Tj=150°C
FWD safe operating area (max.)
Tj=150°C
2500
2000
1500
1000
500
2500
2000
1500
1000
500
Pmax=1250kW
Pmax=1250kW
Notice)
Notice)
Switching characteristics of VCE is
defined between Sense C1 and
Sense C2E1.
Switching characteristics of VCE is
defined between Sense C2E1 and
Sense E2.
0
0
0
500
1000
1500
2000
0
500
1000
1500
2000
Collector-Emitter voltage: VCE [V]
Collector-Emitter voltage: VCE [V]
5
1MBI1000VXB-170EH-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
[THERMISTOR]
Transient Thermal Resistance (max.)
Temperature characteristic (typ.)
100
10
1
0.1
0.01
FWD, Inverse Diode
IGBT
0.001
0.0001
T
sec
IGBT
FWD
0.0023
0.0301
0.0598
0.0708
Rth
°C/W
0.00257 0.00653 0.00922 0.00568
0.00515 0.01305 0.01844 0.01136
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
Temperature [°C]
0.001
0.01
0.1
1
Outline Drawings, mm
LABEL2 VCE(sat),VF
LABEL2
Weight:1250g(typ.)
6
1MBI1000VXB-170EH-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Equivalent Circuit Schematic
[ Thermistor ]
TH1 (7)
Main C1 (9 ), (11)
Sense C1 (5)
G1(4)
[ IGBT ]
[ Inverse Diode ]
TH2 (6)
Sense C2E1(3)
Main C2E1 (8)
[ FWD ]
G2 (1)
NC
Sense E2 (2)
Main E2 (10) , (12)
NOTICE
There is recommendation of wiring for NC terminal as follows.
Fuji recommends wire connection of CASE1 or CASE2 to fix NC terminal voltage.
Case1
Case2
Main C1
Main C1
Sense C1
G1
Sense C1
G1
Gate
Gate
Driver
Driver
Sense C2E1
NC G2
Main C2E1
Main C2E1
Sense C2E1
NC G2
Gate
Driver
Sense E2
Sense E2
Main E2
Main E2
NC terminal (G2) and sense E2 should be
connected by Gate-Driver.
NC terminal (G2) and sense E2 should be
connected by wire.
7
1MBI1000VXB-170EH-54
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
WARNING
1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of June 2015.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to
obtain the latest specifications.
2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied,
under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji
Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's
intellectual property rights which may arise from the use of the applications described herein.
3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When
using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from
causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant,
and free of malfunction.
4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.
5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is
imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such
as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty.
• Transportation equipment (mounted on cars and ships) • Trunk communications equipment
• Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature
• Emergency equipment for responding to disasters and anti-burglary devices• Safety devices
• Medical equipment
6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without
limitation).
• Space equipment • Aeronautic equipment • Nuclear control equipment
• Submarine repeater equipment
7. Copyright ©1996-2015 by Fuji Electric Co., Ltd. All rights reserved.
No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.
8.If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth
herein.
8
Technical Information
IGBT Modules
Please refer to URLs below for futher information about products, application manuals and technical documents.
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アプリケーションマニュアル
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マウンティングインストラクション
IGBT 損失シミュレーションソフト
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应用手册
技术资料
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IGBT 损耗模拟软件
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产品更改和停产信息
2015-10
相关型号：
1MBI1000VXB-170EL-54
Insulated Gate Bipolar Transistor, 1400A I(C), 1700V V(BR)CES, N-Channel, MODULE-12
FUJI
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