1MBI1200U4C-120 [FUJI]
IGBT MODULE; IGBT模块
| 型号： | 1MBI1200U4C-120 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | IGBT MODULE |
| 文件： | 总6页 (文件大小：449K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1MBI1200U4C-120
IGBT MODULE (U series)
IGBT Modules
1200V / 1200A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Symbols
Conditions
Maximum ratings
Units
Collector-Emitter voltage
Gate-Emitter voltage
V
CES
1200
±20
V
V
VGES
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
1600
1200
3200
2400
1200
2400
7350
150
Ic
Continuous
1ms
Collector current
Ic pulse
A
-Ic
-Ic pulse
Pc
Tj
Tstg
1ms
1 device
Collector power dissipation
Junction temperature
Storage temperature
W
°C
°C
-40 to +125
2500
5.75
Isolation voltage Between terminal and copper base (*1) Viso
Mounting (*2)
AC : 1min.
VAC
Screw torque
Main Terminals (*2)
Sense Terminals (*2)
10
2.5
N·m
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Characteristics
Items
Symbols
Conditions
Units
min.
typ.
-
max.
1.0
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
I
I
CES
GES
V
V
V
GE = 0V, VCE = 1200V
CE = 0V, VGE = ±20V
-
-
mA
nA
V
-
2400
V
GE (th)
CE = 20V, I
C
= 1200mA
5.5
-
6.5
7.5
2.25
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2.08
2.28
1.90
2.10
135
0.90
0.50
0.80
0.20
1.83
1.93
1.65
1.75
0.35
0.15
V
CE (sat)
(main terminal)
-
V
GE = 15V
= 1200A
Collector-Emitter saturation voltage
V
I
C
-
2.05
V
CE (sat)
(chip)
Cies
ton
tr
toff
tf
-
-
-
-
-
-
Input capacitance
Turn-on time
V
GE = 0V, VCE = 10V, f = 1MHz
-
-
-
-
-
-
-
-
-
-
-
nF
µs
V
V
CC = 600V, I
GE = ±15V, Tj = 125°C
C
= 1200A
R
gon = 2Ω, Rgoff = 1Ω
Turn-off time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2.00
V
F
(main terminal)
-
V
GE = 0V
Forward on voltage
V
I
F
= 1200A
1.80
V
F
(chip)
-
-
-
Reverse recovery time
Lead resistance, terminal-chip
trr
R lead
I
F
= 1200A
µs
mΩ
Thermal resistance characteristics
Items
Characteristics
Symbols Conditions
Units
min.
typ.
max.
IGBT
Rth(j-c)
-
-
-
-
-
0.017
0.030
-
Thermal resistance (1device)
FWD
°C/W
Contact thermal resistance (1device)
Rth(c-f)
with Thermal Compound (*3)
0.006
Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
1MBI1200U4C-120
IGBT Modules
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C ,chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C, chip
2800
2400
2000
1600
1200
800
2800
2400
2000
1600
1200
800
VGE=20V 15V
VGE=20 15V
12V
12V
10V
8V
10V
8V
400
400
0
0
0.0
1.0
2.0
3.0
4.0
5.0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C ,chip
VGE=+15V,chip
10
2800
Tj=25°C
Tj=125°C
2400
2000
1600
1200
800
400
0
8
6
4
Ic=2400A
2
0
Ic=1200A
Ic=600A
5
10
15
20
25
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Gate - Emitter voltage : VGE [ V ]
Collector-Emitter voltage : VCE [V]
Dynamic Gate charge (typ.)
Tj= 25°C
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
1000
800
600
400
200
0
25
20
15
10
5
Cies
VGE
100
10
1
VCE
Cres
Coes
0
0
1000 2000 3000 4000 5000 6000
0
10
20
30
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ nC ]
2
1MBI1200U4C-120
IGBT Modules
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=1200A,VGE=±15V, Tj=125°C
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rgon=2Ω, Rgoff=1Ω, Tj=125°C
6.0
5.0
4.0
3.0
2.0
1.0
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
ton
ton
toff
tr
tr
toff
tf
tf
16
0
2
4
6
8
10
12
14
18
0
400
800
1200
1600
2000
Gate resistance : Rg [ Ω ]
Collector current : Ic [ A ]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=1200A,VGE=±15V, Tj=125°C
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rgon=2Ω, Rgoff=1Ω, Tj=125°C
400
1000
900
800
700
600
500
400
300
200
100
0
Eon
350
300
250
200
150
100
50
Eoff
Eon
Eoff
Err
Err
0
0
2
4
6
8
10
12
14
16
18
0
400
800
1200
1600
2000
Collector current : Ic [ A ] , Forward current : IF [ A ]
Gate resistance : Rg [ Ω ]
Reverse bias safe operating area (max.)
± VGE=15V ,Tj = 125°C / chip
2800
2400
2000
1600
1200
800
400
0
0
200
400
600
800 1000 1200 1400
Collector - Emitter voltage : VCE [ V ]
3
1MBI1200U4C-120
IGBT Modules
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rgon=2Ω, Tj=125°C
Forward current vs. Forward on voltage (typ.)
chip
900
800
700
600
500
400
300
200
100
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2800
2400
2000
1600
1200
800
Tj=25°C Tj=125°C
Irr
trr
400
0
0
400
800
1200
1600
2000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Forward current : IF [ A ]
Forward on voltage : VF [ V ]
Transient thermal resistance (max.)
0.100
0.010
0.001
FWD
IGBT
0.001
0.010
0.100
1.000
Pulse width : Pw [ sec ]
4
1MBI1200U4C-120
IGBT Modules
Outline Drawings, mm
Equivalent Circuit Schematic
C
C
sense collector
C
gate
G
E
sense emitter
E
E
5
1MBI1200U4C-120
IGBT Modules
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
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express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device
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warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
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adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products
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