1MBI1200U4C-170 [FUJI]
IGBT MODULE; IGBT模块
| 型号： | 1MBI1200U4C-170 |
| 厂家： | 
FUJI ELECTRIC |
| 描述： | IGBT MODULE |
| 文件： | 总6页 (文件大小：498K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1MBI1200U4C-170
IGBT MODULE (U series)
IGBT Modules
1700V / 1200A / 1 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Symbols
Conditions
Maximum ratings
Units
Collector-Emitter voltage
Gate-Emitter voltage
V
CES
1700
±20
V
V
VGES
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
1600
1200
3200
2400
1200
2400
7350
150
Ic
Continuous
1ms
Collector current
Ic pulse
A
-Ic
-Ic pulse
Pc
Tj
Tstg
1ms
1 device
Collector power dissipation
Junction temperature
Storage temperature
W
°C
°C
-40 to +125
3400
5.75
Isolation voltage Between terminal and copper base (*1) Viso
Mounting (*2)
AC : 1min.
VAC
Screw torque
Main Terminals (*2)
Sense Terminals (*2)
10
2.5
N·m
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 4.25-5.75 N·m (M6), Main Terminal : 8-10 N·m (M8), Sense Terminal : 1.7-2.5 N·m (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Characteristics
Items
Symbols
Conditions
Units
min.
typ.
-
max.
1.0
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
I
I
CES
GES
V
V
V
GE = 0V, VCE = 1700V
CE = 0V, VGE = ±20V
-
-
mA
nA
V
-
2400
V
GE (th)
CE = 20V, I
C
= 1200mA
5.5
-
6.5
7.5
2.61
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2.43
2.83
2.25
2.65
112
V
CE (sat)
(main terminal)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
GE = 15V
= 1200A
Collector-Emitter saturation voltage
V
I
C
2.40
V
CE (sat)
(chip)
Cies
ton
tr
toff
tf
-
-
-
-
-
-
Input capacitance
Turn-on time
V
GE = 0V, VCE = 10V, f = 1MHz
nF
µs
1.80
0.85
1.30
0.35
1.98
2.18
1.80
2.00
0.35
0.146
V
V
R
CC = 900V, I
GE = ±15V, Tj = 125°C
gon = 3.9Ω, Rgoff = 1.5Ω
C
= 1200A
Turn-off time
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
2.36
V
F
(main terminal)
-
V
GE = 0V
Forward on voltage
V
I
F
= 1200A
2.15
V
F
(chip)
-
-
-
Reverse recovery time
Lead resistance, terminal-chip (*3)
trr
R lead
I
F
= 1200A
µs
mΩ
Note *3: Biggest internal terminal resistance among arm.
Thermal resistance characteristics
Characteristics
Items
Symbols Conditions
Units
min.
typ.
max.
IGBT
Rth(j-c)
-
-
-
-
-
0.017
0.030
-
Thermal resistance (1device)
FWD
°C/W
Contact thermal resistance (1device)
Rth(c-f)
with Thermal Compound (*4)
0.006
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
1MBI1200U4C-170
IGBT Modules
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 125°C, chip
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C,chip
2800
2400
2000
1600
1200
800
2800
2400
2000
1600
1200
800
VGE=20V
15V
VGE=20V 15V 12V
12V
10V
10V
8V
400
400
8V
0
0
0.0
1.0
2.0
3.0
4.0
5.0
0.0
1.0
2.0
3.0
4.0
5.0
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE=+15V,chip
2800
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C,chip
10
Tj=25°C Tj=125°C
2400
2000
1600
1200
800
400
0
8
6
4
Ic=2400A
2
0
Ic=1200A
Ic=600A
5
10
15
20
25
0
1
2
3
4
5
Gate - Emitter voltage : VGE [ V ]
Collector-Emitter voltage : VCE [V]
Dynamic Gate charge (typ.)
Tj= 25°C
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
1000
100
10
1000
800
600
400
200
0
25
VCE
VGE
20
15
10
5
Cies
Cres
Coes
0
1
0
1000
2000
3000
4000
5000
0
10
20
30
Collector-Emitter voltage : VCE [V]
Gate charge : Qg [ nC ]
2
1MBI1200U4C-170
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=3.9Ω, Rgoff=1.5Ω, Tj=125°C
2.4
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=1200A,VGE=±15V, Tj=125°C
6.0
5.0
4.0
3.0
2.0
1.0
0.0
ton
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
ton
toff
tr
toff
tr
tf
tf
0
2
4
6
8
10
12
14
16
18
0
400
800
1200
1600
2000
Gate resistance : Rg [ Ω ]
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=900V, VGE=±15V, Rgon=3.9Ω, Rgoff=1.5Ω, Tj=125°C
800
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=1200A,VGE=±15V, Tj=125°C
1400
1200
1000
800
600
400
200
0
Eon
700
600
500
400
300
200
100
0
Eoff
Eon
Err
Eoff
Err
16
0
2
4
6
8
10
12
14
18
0
400
800
1200
1600
2000
Gate resistance : Rg [ Ω ]
Collector current : Ic [ A ] , Forward current : IF [ A ]
Reverse bias safe operating area (max.)
± VGE=15V ,Tj = 125°C / chip
2800
2400
2000
1600
1200
800
400
0
0
400
800
1200
1600
2000
Collector - Emitter voltage : VCE [ V ]
3
1MBI1200U4C-170
IGBT Modules
Reverse recovery characteristics (typ.)
Forward current vs. Forward on voltage (typ.)
Vcc=900V, VGE=±15V, Rgon=3.9Ω, Tj=125°C
chip
2800
2400
2000
1600
1200
800
1600
1400
1200
1000
800
600
400
200
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Tj=25°C Tj=125°C
Irr
trr
400
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
400
800
1200
1600
2000
Forward on voltage : VF [ V ]
Forward current : IF [ A ]
Transient thermal resistance (max.)
0.1000
0.0100
0.0010
0.0001
FWD
IGBT
0.001
0.010
0.100
1.000
Pulse width : Pw [ sec ]
4
1MBI1200U4C-170
IGBT Modules
Outline Drawings, mm
Equivalent Circuit Schematic
main collector
C
C
sense collector
C
gate
G
E
sense emitter
E
E
main emitter
5
1MBI1200U4C-170
IGBT Modules
WARNING
1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this
Catalog, be sure to obtain the latest specifications.
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warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which
may arise from the use of the applications described herein.
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