SUD30N04-10 [FREESCALE]
N-Channel 40 V (D-S) 175 °C MOSFET; N沟道40 V （D -S ）， 175 ℃的MOSFET
| 型号： | SUD30N04-10 |
| 厂家： | 
Freescale |
| 描述： | N-Channel 40 V (D-S) 175 °C MOSFET |
| 文件： | 总4页 (文件大小：316K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD30N04-10
N-Channel
40 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% Rg Tested
V(BR)DSS (V)
rDS(on) (W)
ID (A)
a
0.010 @ V = 10 V
30
GS
40
a
0.014 @ V = 4.5 V
GS
30
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
S
Order Number:
SUD30N04-10
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
40
DS
V
V
GS
ꢀ
2
0
a
T
= 25_C
30
C
Continuous Drain Current (T = 175_C)
I
J
D
a
T
= 100_C
30
C
A
Pulsed Drain Current
Avalanche Current
I
120
50
DM
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
125
mJ
W
AR
c
Power Dissipation
T
= 25_C
P
97
C
D
Operating Junction and Storage Temperature Range
T , T
J
-55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
d
PCB Mount
45
110
1.5
55
125
1.8
Junction-to-Ambient
Junction-to-Case
R
thJA
R
thJC
Free Air
_C/W
Notes:
a. Package limited.
b. Duty cycle ꢁ 1%.
c. See SOA curve for voltage derating.
d. Surface mounted on 1” FR4 board.
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SUD30N04-10
N-Channel
40 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = 250 mA
40
1
(BR)DSS
GS
D
V
V
DS
= V , I = 250 mA
GS DS
V
3
GS(th)
V
DS
= 0 V, V
=
ꢀ
2
0
V
I
ꢀ100
1
nA
GS
GSS
V
DS
= 40 V, V = 0 V
GS
V
V
= 40 V, V = 0 V, T = 125_C
50
Zero Gate Voltage Drain Current
I
mA
DS
GS
J
DSS
= 40 V, V = 0 V, T = 175_C
150
DS
GS
J
a
On-State Drain Current
I
V
DS
= 5 V, V = 10 V
30
A
D(on)
GS
V
= 10 V, I = 30 A
0.085
0.014
0.0185
0.0115
0.0195
0.025
57
0.010
0.017
0.022
0.014
0.024
0.031
GS
D
V
GS
= 10 V, I = 30 A, T = 125_C
D
J
V
GS
= 10 V, I = 30 A, T = 175_C
D
J
a
Drain-Source On-State Resistance
r
W
DS(on)
V
GS
= 4.5 V, I = 10 A
D
V
= 4.5 V, I = 10 A, T = 125_C
GS
GS
D
J
V
= 4.5 V, I = 10 A, T = 175_C
D
J
a
Forward Transconductance
g
fs
V
= 15 V, I = 30 A
20
S
DS
D
Dynamicb
Input Capacitance
C
2700
600
160
50
iss
Output Capacitance
C
oss
V = 0 V, V = 25 V, f = 1 MHz
GS DS
pF
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
100
g
c
Gate-Source Charge
Q
Q
9
V
DS
= 15 V, V = 10 V, I = 30 A
nC
gs
gd
GS
D
c
Gate-Drain Charge
11
Gate Resistance
R
1
3.6
30
30
90
50
W
g
c
Turn-On Delay Time
t
14
13
45
25
d(on)
c
Rise Time
t
r
V
= 15 V, R = 0.5 W
L
DD
ns
c
Turn-Off Delay Time
t
d(off)
I
D
ꢂ
30 A, V
= 10 V, R = 2.5 W
GEN G
c
Fall Time
t
f
Source-Drain Ciode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
30
s
A
Pulsed Current
I
120
1.50
100
SM
a
Forward Voltage
V
I
= 30 A, V = 0 V
0.90
50
V
SD
F
GS
Reverse Recovery Time
t
rr
I
F
= 30 A, di/dt = 100 A/ms
ns
Notes:
a. Pulse test; pulse width ꢁ 300 ms, duty cycle ꢁ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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SUD30N04-10
N-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
120
120
V
GS
= 10, 9, 8, 7, 6 V
5 V
90
60
30
0
90
60
4 V
T
= 125_C
C
30
0
25_C
3 V
8
-55_C
0
2
4
6
10
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
100
80
60
40
20
0
0.030
0.025
0.020
0.015
0.010
0.005
0.000
T
= -55_C
C
25_C
125_C
V
GS
= 4.5 V
V
GS
= 10 V
0
30
GS
60
90
120
0
20
40
60
80
100
V
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
Capacitance
Gate Charge
4000
3200
2400
1600
800
10
8
V
D
= 15 V
GS
C
iss
I
= 30 A
6
4
C
oss
2
C
rss
0
0
0
8
16
24
32
40
0
10
20
30
40
50
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
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SUD30N04-10
N-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistancevs. Junction Temperature
2.5
2.0
1.5
1.0
0.5
0.0
100
V
D
= 10 V
GS
I
= 30 A
T = 150_C
J
T = 25_C
J
10
1
-50 -25
0
25
50
75 100 125 150 175
0.3
V
0.6
0.9
1.2
1.5
T
- Junction Temperature (_C)
- Source-to-Drain Voltage (V)
J
SD
THERMAL RATINGS
Maximum Drain Current vs.
Ambiemt Temperature
Safe Operating Area
200
100
40
30
20
10
0
10 ms
Limited
DS(on)
by r
100 ms
10
1 ms
10 ms
100 ms
dc
1
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
50
V
DS
- Drain-to-Source Voltage (V)
T
A
- Ambient Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-5
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (sec)
10
1
3
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