SUD35N05-26L [FREESCALE]
N-Channel 55 V (D-S) 175 °C MOSFET; N沟道55 V （D -S ）， 175 ℃的MOSFET
| 型号： | SUD35N05-26L |
| 厂家： | 
Freescale |
| 描述： | N-Channel 55 V (D-S) 175 °C MOSFET |
| 文件： | 总5页 (文件大小：339K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD35N05-26L
N-Channel
55 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFETS
D 175_C Rated Maximum Junction Temperature
D Low Input Capacitance
VDS (V)
rDS(on) (W)
ID (A)a
0.020 @ V = 10 V
35
30
GS
APPLICATIONS
55
0.026 @ V = 4.5 V
GS
D Automotive Fuel Injection Systems
D Automotive Wipers
D Automotive Door Modules
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD35N05-26L
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
55
"20
35
DS
GS
V
V
T
= 25_C
= 100_C
C
b
Continuous Drain Current (T = 175_C)
I
J
D
T
25
C
A
Pulsed Drain Current
I
80
DM
a
Continuous Source Current (Diode Conduction)
I
S
35
c
T
= 25_C
= 25_C
50
C
Maximum Power Dissipation
P
D
W
b
T
7.5
A
Operating Junction and Storage Temperature Range
T , T
–55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
17
50
20
60
b
Junction-to-Ambient
R
R
thJA
thJC
Steady State
C/W
Junction-to-Case
Junction-to-Lead
2.5
5.0
3.0
6.0
R
thJL
Notes
a. Package Limited.
b. Surface Mounted on 1” x1” FR4 Board, t v 10 sec.
c. See SOA curve for voltage derating.
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SUD35N05-26L
N-Channel
55 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
55
1
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
GS D
GS(th)
V
DS
= 0 V, V = "20 V
GS
I
"100
1
nA
GSS
V
= 44 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 44 V, V = 0 V, T = 125_C
V
50
GS
J
b
On-State Drain Current
I
= 5 V, V = 5 V
35
A
D(on)
DS
GS
V
= 10 V, I = 20 A
0.0165
0.020
0.035
0.026
GS
D
b
V
GS
= 10 V, I = 20 A, T = 125_C
Drain-Source On-State Resistance
r
W
D
J
DS(on)
V
GS
= 4.5 V, I = 15 A
0.0215
25
D
b
Forward Transconductance
g
fs
V
= 15 V, I = 20 A
S
DS
D
Dynamica
Input Capacitance
C
C
885
185
80
iss
V
GS
= 0 V, V = 25 V, F = 1 MHz
DS
Output Capacitance
pF
nC
oss
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
10.5
4
13
g
c
Gate-Source Charge
Q
Q
V
DS
= 25 V, V = 5 V, I = 35 A
gs
gd
GS
D
c
Gate-Drain Charge
4.8
5
c
Turn-On Delay Time
t
8
d(on)
c
Rise Time
t
r
18
30
V
DD
= 25 V, R = 0.3 W
L
ns
c
I
D
^ 35 A, V = 10 V, R = 2.5 W
GEN G
Turn-Off Delay Time
t
20
30
d(off)
c
Fall Time
t
f
100
150
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Continuous Current
I
35
S
A
Pulsed Current
I
80
1.5
40
SM
b
Diode Forward Voltage
V
I
= 80 A, V = 0 V
V
SD
F
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 35 A, di/dt = 100 A/ms
25
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
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SUD35N05-26L
N-Channel
55 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
100
V
GS
= 10 thru 6 V
5 V
T
= –55_C
C
80
60
40
20
0
80
60
40
20
0
25_C
125_C
4 V
3 V
2 V
6
0
2
4
8
10
0
1
2
3
4
5
6
7
8
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
60
50
40
30
20
10
0
0.04
0.03
0.02
0.01
0.00
T
= –55_C
C
25_C
V
GS
= 4.5 V
V
GS
= 10 V
125_C
0
20
40
60
80
100
0
20
40
60
80
100
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
Gate Charge
1500
1200
900
600
300
0
20
16
12
8
V
= 25 V
= 35 A
DS
I
D
C
iss
4
C
oss
C
rss
0
0
11
22
33
44
55
0
10
20
30
40
V
DS
– Drain-to-Source Voltage (V)
Q
– Total Gate Charge (nC)
g
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SUD35N05-26L
N-Channel
55 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistancevs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
100
V
= 10 V
= 20 A
GS
I
D
1.6
1.2
0.8
0.4
0.0
T = 175_C
J
10
T = 25_C
J
1
–50 –25
0
25
50
75 100 125 150 175
0
0.2
V
0.4
0.6
0.8
1.0
1.2
T
– Junction Temperature (_C)
– Source-to-Drain Voltage (V)
SD
J
THERMAL RATINGS
Maximum Avalanche Drain Current vs.
Case Temperature
Safe Operating Area
500
100
40
30
20
10
0
Limited
by r
DS(on)
10 ms
100 ms
10
1
10 ms
100 ms
1 s
dc
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
– Case Temperature (_C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
30
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SUD35N05-26L
N-Channel
55 V (D-S) 175 °C MOSFET
Disclaimer
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相关型号：
SUD35N05-26L-E3
Power Field-Effect Transistor, 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2
VISHAY
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