SUD40N02-3M3P-E3 [VISHAY]
N-Channel 20-V (D-S), 175 °C MOSFET; N通道20 -V （D -S ） ， 175℃ MOSFET
| 型号： | SUD40N02-3M3P-E3 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 20-V (D-S), 175 °C MOSFET |
| 文件： | 总7页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SUD40N02-3m3P
Vishay Siliconix
N-Channel 20-V (D-S), 175 °C MOSFET
FEATURES
•
PRODUCT SUMMARY
TrenchFET® Power MOSFET
100 % Rg Tested
VDS (V)
rDS(on) (Ω)
Qg (Typ)
I
D (A)a
40
•
RoHS
0.0033 at VGS = 10 V
0.0044 at VGS = 4.5 V
COMPLIANT
20
30 nC
40
APPLICATIONS
Server
•
TO-252
D
G
Drain Connected to Tab
G
D
S
Top View
S
Order Number:
SUD40N02-3m3P-E3 (Lead (Pb)-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
20
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
20
40a
40a
24.4b
17.2b
100
40a
2.8b
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA = 100 °C
Continuous Drain Current (TJ = 150 °C)
ID
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA = 100 °C
Continuous Source-Drain Diode Current
79
39.5
3.3b
1.6b
Maximum Power Dissipation
PD
W
TJ, Tstg
°C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
- 55 to 175
Parameter
Maximum Junction-to-Ambientb
Symbol
RthJA
Typical
37
Maximum
Unit
Steady State
Steady State
45
°C/W
RthJC
Maximum Junction-to-Case
1.5
1.9
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
Document Number: 69819
S-80260-Rev. A, 04-Feb-08
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1
New Product
SUD40N02-3m3P
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
20
V
21
mV/°C
- 6.9
VDS = VGS, ID = 250 µA
1
3
V
IGSS
VDS = 0 V, VGS
=
20 V
100
1
nA
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 100 °C
VDS ≥ 5 V, VGS = 10 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
rDS(on)
gfs
µA
A
20
30
VGS = 10 V, ID = 20 A
0.0027
0.0036
100
0.0033
0.0044
Drain-Source On-State Resistancea
Ω
S
VGS = 4.5 V, ID = 20 A
Forward Transconductancea
Dynamicb
VDS = 15 V, ID = 20 A
Input Capacitance
Ciss
Coss
Crss
6520
1430
770
105
50
Output Capacitance
Reverse Transfer Capacitance
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 50 A
pF
160
75
Total Gate Charge
Qg
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Qgs
Qgd
Rg
V
DS = 10 V, VGS = 4.5 V, ID = 50 A
f = 1 MHz
17
14
1.2
40
1.9
60
45
101
50
20
11
60
14
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
30
VDD = 10 V, RL = 0.2 Ω
ID ≅ 50 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
67
33
ns
Turn-On Delay Time
Rise Time
13
7
VDD = 10 V, RL = 0.2 Ω
ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
40
9
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
Body Diode Voltage
IS
ISM
VSD
trr
TC = 25 °C
IS = 20 A
40
100
1.2
57
A
0.81
38
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Notes:
ns
nC
Qrr
ta
34
51
IF = 50 A, di/dt = 100 A/µs, TJ = 25 °C
18
ns
tb
20
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69819
S-80260-Rev. A, 04-Feb-08
New Product
SUD40N02-3m3P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
80
3.0
2.4
1.8
1.2
0.6
0.0
V
GS
= 10 thru 4 V
T
C
= - 55 °C
60
40
20
0
V
= 3 V
GS
T
C
= 25 °C
T
= 125 °C
1.5
C
V
= 2 V
GS
0.0
0.4
0.8
1.2
1.6
2.0
100
20
0.0
0.5
1.0
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
- Gate-to-Source Voltage (V)
GS
Output Characteristics
Transfer Characteristics
0.0040
0.0036
0.0032
0.0028
0.0024
0.010
0.008
0.006
0.004
0.002
0.000
I
= 20 A
D
V
= 4.5 V
GS
T
= 125 °C
A
V
= 10 V
GS
T
= 25 °C
A
0
20
40
60
80
2
4
6
8
10
V
- Gate-to-Source Voltage (V)
I
- Drain Current (A)
GS
D
On-Resistance vs. VGS vs. Temperature
On-Resistance vs. Drain Current
10
8
8000
6000
4000
2000
0
C
iss
I
= 50 A
D
V
= 10 V
DS
6
V
= 16 V
DS
4
C
oss
2
C
rss
0
0
20
40
60
80
100
120
0
4
8
12
16
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
Document Number: 69819
S-80260-Rev. A, 04-Feb-08
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New Product
SUD40N02-3m3P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
1
1.7
I
= 20 A
D
1.5
1.3
1.1
0.9
0.7
V
GS
= 10 V, 4.5 V
T
J
= 150 °C
T
J
= 25 °C
- 50 - 25
0
25
50
75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
T
J
- Junction Temperature (°C)
Forward Diode Voltage vs. Temperature
On-Resistance vs. Junction Temperature
2.4
2.0
1.6
1.2
0.8
0.4
200
150
100
50
I
= 250 µA
D
0
- 50 - 25
0
25
50
75 100 125 150 175
0.01
0.1
1
10
100
T
J
- Temperature (°C)
Time (s)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
1000
100
250
200
150
100
50
Limited by r
*
DS(on)
1 ms
10 ms
100 ms
1 s
10
1
10 s
DC
0.1
0.01
BVDSS
T
= 25 °C
A
Single Pulse
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
100
Time (s)
V
DS
- Drain-to-Source Voltage (V)
Single Pulse Power, Junction-to-Case
* V > minimum V at which r
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 69819
S-80260-Rev. A, 04-Feb-08
New Product
SUD40N02-3m3P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1000
30
24
18
12
6
Limited by r
*
DS(on)
100
10
1 ms
10 ms
DC
1
0.1
0.01
BVDSS
T
= 25 °C
A
Single Pulse
0.001
0
0.01
0.1
1
10
100
175
175
0
25
50
75
100
125
150
175
V
DS
- Drain-to-Source Voltage (V)
T
- Ambient Temperature (°C)
A
* V > minimum V at which r is specified
DS(on)
GS
GS
Current Derating**, Junction-to-Ambient
Safe Operating Area, Junction-to-Case
4
3
2
1
0
150
120
90
60
30
0
Package Limited
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
T
- Ambient Temperature (°C)
T
- Case Temperature (°C)
A
C
Power Derating**, Junction-to-Ambient
Current Derating**, Junction-to-Case
100
80
60
40
20
0
** The power dissipation PD is based on TJ(max) = 175 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
0
25
50
75
100
125
150
T
- Case Temperature (°C)
C
Power Derating**, Junction-to-Case
Document Number: 69819
S-80260-Rev. A, 04-Feb-08
www.vishay.com
5
New Product
SUD40N02-3m3P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
P
DM
0.05
t
1
t
2
t
t
1
2
0.02
1. Duty Cycle, D =
2. Per Unit Base = R
= 70 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69819.
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Document Number: 69819
S-80260-Rev. A, 04-Feb-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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相关型号：
SUD40N04-10A-E3
TRANSISTOR 40 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, 3 PIN, FET General Purpose Power
VISHAY
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