SUD40N04-10 [FREESCALE]
N-Channel 40 V (D-S) 175 °C MOSFET; N沟道40 V (D -S ), 175 ℃的MOSFET![SUD40N04-10](http://pdffile.icpdf.com/pdf1/p00183/img/icpdf/SUD40N_1037165_icpdf.jpg)
型号: | SUD40N04-10 |
厂家: | ![]() |
描述: | N-Channel 40 V (D-S) 175 °C MOSFET |
文件: | 总4页 (文件大小:242K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SUD40N04-10A
N-Channel
40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (W)
ID (A)a
40
0.010 @ V = 10 V
GS
40
0.014 @ V = 4.5 V
40
GS
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
S
Order Number:
SUD40N04-10A
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
40
DS
V
V
GS
ꢀ
2
0
a
T
= 25_C
40
C
Continuous Drain Current (T = 175_C)
I
J
D
a
T
= 100_C
40
C
A
Pulsed Drain Current
Avalanche Current
I
100
30
DM
I
AR
b
Repetitive Avalanche Energy
L = 0.1 mH
E
45
mJ
W
AR
c
Power Dissipation
T
= 25_C
P
71
C
D
Operating Junction and Storage Temperature Range
T , T
J
–55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
ꢁ
1
0
s
e
c
.
15
40
18
50
d
Junction-to-Ambient
R
thJA
R
thJC
Steady State
_C/W
Junction-to-Case
1.75
2.1
Notes:
a. Package limited.
b. Duty cycle ꢁ 1%.
c. See SOA curve for voltage derating.
d. Surface mounted on 1” FR4 board.
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SUD40N04-10A
N-Channel
40 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
V
= 0 V, I = 250 mA
40
1
(BR)DSS
GS
D
V
V
DS
= V , I = 250 mA
GS DS
V
3
GS(th)
V
DS
= 0 V, V
=
ꢀ20 V
I
ꢀ100
1
nA
GS
GSS
V
DS
= 32 V, V = 0 V
GS
V
V
= 32 V, V = 0 V, T = 125_C
50
Zero Gate Voltage Drain Current
I
mA
DS
GS
J
DSS
= 32 V, V = 0 V, T = 175_C
150
DS
GS
J
a
On-State Drain Current
I
V
DS
= 5 V, V = 10 V
40
A
D(on)
GS
V
= 10 V, I = 40 A
0.0075
0.012
0.015
0.011
0.018
0.022
40
0.010
0.016
0.020
0.014
0.022
0.028
GS
D
V
GS
= 10 V, I = 40 A, T = 125_C
D
J
V
GS
= 10 V, I = 40 A, T = 175_C
D
J
a
Drain-Source On-State Resistance
r
W
DS(on)
V
GS
= 4.5 V, I = 10 A
D
V
= 4.5 V, I = 10 A, T = 125_C
GS
GS
D
J
V
= 4.5 V, I = 10 A, T = 175_C
D
J
a
Forward Transconductance
g
fs
V
= 15 V, I = 40 A
20
S
DS
D
Dynamicb
Input Capacitance
C
1700
370
145
35
iss
Output Capacitance
C
oss
V = 0 V, V = 25 V, f = 1 MHz
GS DS
pF
nC
Reversen Transfer Capacitance
C
rss
c
Total Gate Charge
Q
g
c
Gate-Source Charge
Q
Q
6
V
DS
= 20 V, V = 10 V, I = 40 A
gs
gd
GS
D
c
Gate-Drain Charge
8
c
Turn-On Delay Time
t
14
30
15
60
30
d(on)
c
Rise Time
t
r
7.5
30
V
= 20 V, R = 0.5 W
L
DD
ns
c
Turn-Off Delay Time
t
d(off)
I
D
ꢂ
40 A, V
= 10 V, R = 2.5 W
GEN G
c
Fall Time
t
f
14
Source-Drain Ciode Ratings and Characteristics (TC = 25_C)b
Continuous Current
I
40
100
1.50
60
s
A
Pulsed Current
I
SM
a
Forward Voltage
V
SD
I
F
= 40 A, V = 0 V
1.0
30
V
GS
Reverse Recovery Time
t
rr
I
F
= 40 A, di/dt = 100 A/ms
ns
Notes:
a. Pulse test; pulse width ꢁ 300 ms, duty cycle ꢁ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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SUD40N04-10A
N-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
120
V
GS
= 10 thru 6 V
5 V
80
60
40
90
60
30
0
4 V
T
= 125_C
C
20
0
25_C
3 V
8
–55_C
0
2
4
6
10
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
0.030
0.025
0.020
0.015
0.010
0.005
0.000
80
60
40
20
0
T
= –55_C
C
25_C
125_C
V
GS
= 4.5 V
V
GS
= 10 V
0
20
40
60
80
100
0
20
40
60
80
100
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
Capacitance
Gate Charge
3000
2500
2000
1500
1000
500
20
16
12
8
V
= 20 V
= 40 A
GS
I
D
C
iss
C
oss
4
C
rss
0
0
0
8
16
24
32
40
0
10
20
30
40
50
60
V
DS
– Drain-to-Source Voltage (V)
Q
– Total Gate Charge (nC)
g
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SUD40N04-10A
N-Channel
40 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistancevs. Junction Temperature
2.5
100
V
= 10 V
= 30 A
GS
I
D
2.0
1.5
1.0
0.5
0.0
T = 150_C
J
T = 25_C
J
10
1
–50 –25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
– Junction Temperature (_C)
– Source-to-Drain Voltage (V)
J
SD
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
Safe Operating Area
1000
50
40
30
20
10
0
Limited
by r
DS(on)
100
10
10 ms
100 ms
1 ms
10 ms
100 ms
dc
1
T
= 25_C
C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
– Ambient Temperature (_C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
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SUD40N04-10A-E3
TRANSISTOR 40 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, TO-252, 3 PIN, FET General Purpose Power
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