SUD40N02-08 [FREESCALE]
N-Channel 20 V (D-S) 175 °C MOSFET; N沟道20 V （D -S ）， 175 ℃的MOSFET
| 型号： | SUD40N02-08 |
| 厂家： | 
Freescale |
| 描述： | N-Channel 20 V (D-S) 175 °C MOSFET |
| 文件： | 总5页 (文件大小：429K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD40N02-08
N-Channel
20 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% Rg Tested
VDS (V)
rDS(on)
(
ꢀ
)
ID (A)a
0.0085 @ V = 4.5 V
40
40
GS
20
0.014 @ V = 2.5 V
GS
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD40N02-08
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
20
"12
40
DS
GS
V
V
T
= 25_C
= 100_C
C
a
Continuous Drain Current
I
D
T
40
C
A
Pulsed Drain Current
I
100
40
DM
a
Continuous Source Current (Diode Conduction)
I
S
T
= 25_C
= 25_C
71
C
Maximum Power Dissipation
P
D
W
b, c
8.3
T
A
Operating Junction and Storage Temperature Range
T , T
-55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec.
15
18
b
Maximum Junction-to-Ambient
R
thJA
R
thJC
Steady State
40
50
_C/W
Maximum Junction-to-Case
1.75
2.1
Notes
a. Package Limited
b. Surface Mounted on 1” x 1” FR4 Board
c. t v 10 sec
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SUD40N02-08
N-Channel
20 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 ꢁ A
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
20
GS
(BR)DSS
V
V
V
DS
= V , I = 250 ꢁ A
0.6
GS(th)
GS
D
V
DS
= 0 V, V = "12 V
GS
I
"100
1
nA
GSS
V
= 20 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
ꢁ
A
DSS
V
V
= 20 V, V = 0 V, T = 125_C
50
DS
GS
J
b
On-State Drain Current
I
V
DS
= 5 V, V = 4.5 V
40
20
A
D(on)
GS
V
= 4.5 V, I = 20 A
0.0068
0.0104
0.011
0.0085
0.013
0.014
GS
D
b
= 4.5 V, I = 20 A, T = 125_C
V
Drain-Source On-State Resistance
r
ꢀ
GS
D
J
DS(on)
= 2.5 V, I = 20 A
D
GS
b
Forward Transconductance
g
fs
V
= 5 V, I = 40 A
S
DS
D
Dynamica
Input Capacitance
C
C
2660
730
375
26
iss
V
GS
= 0 V, V = 20 V, f = 1 MHz
DS
Output Capacitance
pF
oss
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
35
g
c
Gate-Source Charge
Q
Q
5
V
DS
= 10 V, V = 4.5 V, I = 40 A
nC
gs
gd
GS
D
c
Gate-Drain Charge
7
Gate Resistance
R
1
3.7
35
ꢀ
g
c
Turn-On Delay Time
t
20
120
45
d(on)
c
Rise Time
t
r
190
70
V
= 10 V, R = 0.25 ꢀ
L
GEN G
DD
ns
c
I
D
^ 40 A, V
= 4.5 V, R = 2.5 ꢀ
Turn-Off Delay Time
t
d(off)
c
Fall Time
t
f
20
35
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
100
1.5
70
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 100 A, V = 0 V
1.2
35
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 40 A, di/dt = 100 A/ꢁ s
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ꢁ s, duty cycle v 2%.
c. Independent of operating temperature.
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SUD40N02-08
N-Channel
20 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
100
100
V
GS
= 4.5 thru 3 V
80
60
40
20
0
80
60
40
2.5 V
2 V
T
= 125_C
C
20
0
25_C
-55_C
1, 0.5 V
8
0
2
4
6
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
120
100
80
60
40
20
0
0.020
0.015
0.010
0.005
0.000
T
= -55_C
C
25_C
V
GS
= 2.5 V
125_C
V
GS
= 4.5 V
0
20
40
60
80
100
0
20
40
60
80
100
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
Capacitance
Gate Charge
4500
3600
2700
1800
900
12
9
V
D
= 10 V
GS
I
= 40 A
C
iss
6
C
oss
3
C
rss
0
0
0
4
8
12
16
20
0
10
20
g
30
40
50
60
70
V
- Drain-to-Source Voltage (V)
Q
- Total Gate Charge (nC)
DS
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SUD40N02-08
N-Channel
20 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistancevs. Junction Temperature
Source-Drain Diode Forward Voltage
2.0
100
V
D
= 4.5 V
GS
I
= 20 A
1.6
1.2
0.8
0.4
0.0
T = 150_C
J
T = 25_C
J
10
1
-50 -25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
- Junction Temperature (_C)
- Source-to-Drain Voltage (V)
J
SD
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
Safe Operating Area
200
100
50
40
30
20
10
0
10 ꢁ s
Limited
by r
100 ꢁ s
DS(on)
10
1 ms
10 ms
100 ms
dc
T
= 25_C
C
Single Pulse
1
0.1
0
25
50
75
100
125
150
175
1
10
100
V
DS
- Drain-to-Source Voltage (V)
T
- Case Temperature (_C)
C
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (sec)
10
100
600
1
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SUD40N02-08
N-Channel
20 V (D-S) 175 °C MOSFET
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