SUD30N03-30 [FREESCALE]
N-Channel 30 V (D-S) 175 °C MOSFET; N沟道30 V （D -S ）， 175 ℃的MOSFET
| 型号： | SUD30N03-30 |
| 厂家： | 
Freescale |
| 描述： | N-Channel 30 V (D-S) 175 °C MOSFET |
| 文件： | 总5页 (文件大小：360K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUD30N03-30
N-Channel
30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
"30
0.030 @ V = 10 V
GS
30
0.045 @ V = 4.5 V
GS
"25
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
Order Number:
SUD30N03-30
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)
C
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
30
"20
"30
"21
"40
30
DS
GS
V
V
T
= 25_C
C
Continuous Drain Current
I
D
(T = 175_C)
J
T
C
= 100_C
A
Pulsed Drain Current
I
DM
Continuous Source Current (Diode Conduction)
I
S
T
= 25_C
= 25_C
50
C
Maximum Power Dissipation
P
W
D
a
T
A
3
Operating Junction and Storage Temperature Range
T , T
J
–55 to 175
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambient
Maximum Junction-to-Case
R
50
thJA
thJC
_C/W
R
3.0
Notes
a. Surface Mounted on 4” x 4” FR4 Board.
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1 / 5
SUD30N03-30
N-Channel
30 V (D-S) 175 °C MOSFET
SPECIFICATIONS (T = _2C5 UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typa
Max
Unit
Static
V
= 0 V, I = 250 mA
D
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
30
GS
(BR)DSS
V
V
V
DS
= V , I = 250 mA
1.0
GS(th)
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
1
nA
GSS
V
= 30 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
V
V
= 30 V, V = 0 V, T = 125_C
50
mA
DSS
DS
GS
J
= 30 V, V = 0 V, T = 175_C
150
DS
GS
J
b
On-State Drain Current
I
V
DS
= 5 V, V = 10 V
30
10
A
D(on)
GS
V
GS
= 10 V, I = 15 A
0.020
0.033
0.036
0.030
22
0.030
0.050
0.054
0.045
D
V
V
= 10 V, I = 15 A, T = 125_C
GS
D
J
b
Drain-Source On-State Resistance
r
W
DS(on)
= 10 V, I = 15 A, T = 175_C
GS
D
J
V
GS
= 4.5 V, I = 12.5 A
D
b
Forward Transconductance
g
fs
V
DS
= 15 V, I = 15 A
S
D
Dynamica
Input Capacitance
C
1170
320
60
iss
V
GS
= 0 V, V = 25 V, f = 1 MHz
DS
Output Capacitance
C
oss
pF
nC
Reverse Transfer Capacitance
C
rss
c
Total Gate Charge
Q
18
35
g
c
Gate-Source Charge
Q
gs
Q
gd
V
DS
= 15 V, V = 10 V, I = 30 A
5.5
2
GS
D
c
Gate-Drain Charge
c
Turn-On Delay Time
t
10
20
20
40
30
d(on)
c
Rise Time
t
r
10
V
= 15 V, R = 0.5 W
L
= 10 V, R = 7.5 W
GEN G
DD
ns
I
D
^ 30 A, V
c
Turn-Off Delay Time
t
25
d(off)
c
Fall Time
t
f
15
Source-Drain Diode Ratings and Characteristic (TC = 25_C)
Pulsed Current
I
40
1.5
100
A
V
SM
b
Diode Forward Voltage
V
SD
I
F
= 30 A, V = 0 V
1.1
50
GS
Source-Drain Reverse Recovery Time
t
rr
I
F
= 30 A, di/dt = 100 A/ms
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
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SUD30N03-30
N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
32
24
16
8
40
32
24
16
8
V
GS
= 10, 9, 8, 7, 6, 5 V
4 V
T
C
= 150_C
25_C
3 V
–55_C
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
30
24
18
12
6
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
T
C
= –55_C
25_C
125_C
V
GS
= 4.5 V
V
GS
= 10 V
0
0
8
16
24
32
40
0
8
16
24
32
40
I
D
– Drain Current (A)
I
D
– Drain Current (A)
Capacitance
Gate Charge
1500
1200
900
600
300
0
10
8
C
iss
V
= 15 V
= 30 A
DS
I
D
6
C
oss
4
2
C
rss
0
0
6
12
18
24
30
0
3
6
9
12
Q – Total Gate Charge (nC)
g
15
18
V
– Drain-to-Source Voltage (V)
DS
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SUD30N03-30
N-Channel
30 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
10
1
V
= 10 V
= 15 A
GS
I
D
T = 175_C
J
T = 25_C
J
–50 –25
0
25
50
75 100 125 150 175
0
0.3
V
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
– Source-to-Drain Voltage (V)
SD
THERMAL RATINGS
Maximum Drain Current vs. CaseTemperature
Safe Operating Area
200
100
35
28
21
14
7
Limited
by r
DS(on)
1 ms
10
1
10 ms
100 ms
dc
T
= 25_C
C
Single Pulse
0
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
V
DS
– Drain-to-Source Voltage (V)
T
C
– Case Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
–4
–3
–2
–1
10
10
10
10
1
3
Square Wave Pulse Duration (sec)
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SUD30N03-30
N-Channel
30 V (D-S) 175 °C MOSFET
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