FMS2028 [FILTRONIC]
SP6T GaAs Multi-Band GSM Antenna Switch; SP6T砷化镓多频GSM天线开关型号: | FMS2028 |
厂家: | FILTRONIC COMPOUND SEMICONDUCTORS |
描述: | SP6T GaAs Multi-Band GSM Antenna Switch |
文件: | 总5页 (文件大小:349K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FMS2028
Preliminary Datasheet v2.1
SP6T GaAs Multi-Band GSM Antenna Switch
FEATURES:
FUNCTIONAL SCHEMATIC:
•
•
•
•
•
•
Available in die form
ANT
Very low Tx Insertion loss
High Tx-Rx isolation >45dB typ. at 1.8GHz
High Tx-Tx isolation >30dB typ. at 1.8GHz
Excellent low control voltage performance
Excellent harmonic performance
RX1
VRX1
TX1
RX2
VTX1
VRX2
TX2
RX3
GENERAL DESCRIPTION:
VTX2
VRX3
FMS2028 is a low loss, high power single
pole six throw Gallium Arsenide antenna
switch. The die is fabricated using the
Filtronic FL05 0.5µm switch process
technology that offers leading edge
RX4
VRX4
VM
performance
optimised
for
switch
applications. FMS2028 is designed for use
in dual-, tri- and quad-band GSM handset
antenna switch and RF front-end modules.
TYPICAL APPLICATIONS:
Suitable for multi-band
GSM/DCS/PCS/EDGE applications
•
ELECTRICAL SPECIFICATIONS:
(1)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Tx Insertion Loss
0.9 GHz
1.8 GHz
0
0
0.4
0.55
0.6
dB
dB
0.41
Rx Insertion Loss
Return Loss
0.9 GHz
1.8 GHz
0
0
0.73
1.0
1
dB
dB
1.2
0.5 – 2.5 GHz
––
23
––
dB
Isolation
(TX-TX)
0.9 GHz
1.8 GHz
26
28.5
21
55
45
dB
dB
19.5
Isolation
(TX-RX)
0.9 GHz
1.8 GHz
42
37
47
42
55
55
dB
dB
Isolation
(RX-RX)
0.5 – 1.0 GHz
1.0 – 2.0 GHz
26
20
28
22
––
––
dB
dB
P0.1dB
0.9 GHz, CW
––
37
––
dBm
2nd Harmonic Level
0.9 GHz, Pin = +35 dBm, CW (2)
1.8 GHz, Pin = +33 dBm, CW (2)
-100
-100
-80
-80
-70
-70
dBc
dBc
3rd Harmonic Level
Switching speed
0.9 GHz, Pin = +35 dBm, CW (2)
1.8 GHz, Pin = +33 dBm, CW (2)
-100
-100
-68
-72
-65
-65
dBc
dBc
10% to 90% RF and 90% to 10% RF, Pin = 0 dBm
––
––
0.3
µs
50% control to 90% RF and 50% control to 90% RF,
Pin = 0 dBm
––
––
1
µs
Control Current
Vctrl = 0 / 2.7 V, Pin = 35 dBm, 0.9 GHz
Vctrl = 0 / 2.7 V, Pin = 0 dBm, 1.8 GHz
0.01
0.01
12
40
4
µA
µA
1.3
Note 1: TAMBIENT = 25°C, Vctrl = 0V/2.7V, ZIN = ZOUT = 50Ω
Note 2: Measured harmonic values are dependant upon system termination impedances at the harmonic
frequency
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
FMS2028
Preliminary Datasheet v2.1
ABSOLUTE MAXIMUM RATINGS:
BONDPADS COORDINATES:
ABSOLUTE
MAXIMUM
PAD
REF NAME
PAD
DESCRIPTION
PIN
PARAMETER
SYMBOL
Pin
COORDINATES
(µM)
Max Input
Power
+38dBm
A
B
Tx1
TX1 RF Output
(125.9, 121.4)
Control
Voltage
VRx1
Rx1 Control
Voltage
(100.2, 215.9)
(110.4, 310.5)
(90.5, 405.1)
(90.5, 499.7)
(90.5, 594.3)
(107, 688.9)
(107, 783.5)
Vctrl
+6V
Operating
Temp
C
D
E
F
VTx1
VRx2
VM
Tx1 Control
Voltage
Toper
Tstor
-40°C to +100°C
-55°C to +150°C
Storage Temp
Rx2 Control
Voltage
Note: Exceeding any one of these absolute
maximum ratings may cause permanent
damage to the device.
Common Receive
Control Voltage
VRx3
VTx2
VRx4
Rx3 Control
Voltage
G
H
Tx2 Control
Voltage
PAD LAYOUT:
Rx4 Control
Voltage
I
O
N
I
Tx2
ANT
Rx1
GND
Rx2
Rx3
Rx4
Tx2 RF Output
Antenna
(125.9, 878.1)
(424.9, 499.7)
(568.2, 114.8)
(747.4, 282.7)
(747.4, 380.3)
(747.4, 681.2)
(747.4, 882.1)
H
G
F
E
D
C
B
A
J
K
L
Rx1 RF Output
Ground
J
M
N
O
RX2 RF Output
RX3 RF Output
RX4 RF Output
M
L
Note: Co-ordinates are referenced from the bottom
left hand corner of the die to the centre of bond pad
opening
K
MIN. BOND PAD PITCH
MIN. BOND PAD OPENING
DIE SIZE (µm)
DIE THICKNESS (µm)
(µm)
(µm x µm )
852 x 990
150
94.6
65 x 65
TRUTH TABLE:
VM
VRX4
VRX3
Low
VRX2
VRX1
Low
VTX2
Low
VTX1
High
ON PATH
ANT-TX1
Low
Low
High
High
High
High
Low
Low
Low
Low
Low
High
Low
Low
Low
High
Low
Low
Low
Low
High
Low
ANT-TX2
Low
Low
High
Low
High
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
Low
ANT-RX1
ANT-RX2
ANT-RX3
ANT-RX4
Note: High: 2.7V 0.2V; Low: 0V 0.2V
2
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
FMS2028
Preliminary Datasheet v2.1
TYPICAL MEASURED PERFORMANCE ON EVALUATION BOARD:
Note: Measurement Conditions VCTRL= 0V (low) & 2.7V (high), TAMBIENT = 25°C unless otherwise stated
3
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
FMS2028
Preliminary Datasheet v2.1
EVALUATION BOARD COMPONENT SIDE LAYOUT:
EVALUATION BOARD SCHEMATIC:
V1
V2
V3
V4
V5
V6
V7
C2
C2
C2
C2
C2
C2
C2
C1
C1
C1
C1
C1
C1
C1
VRX1
VTX1
VRX2
VM
VRX3
VTX2
VRX4
RF1
RF2
C3
C3
C3
C3
RF7
RF4
TX2
ANT
TX1
FMS2028
RX1
GND
RX2
RX3
RX4
C3
C3
C3
RF3
RF5
RF6
BILL OF MATERIALS:
LABEL
Board
COMPONENT
Preferred evaluation board material is 0.25 mm thick ROGERS RT4350. All RF tracks should be 50 ohm
characteristic material.
RFC
DCC
C1
SMA RF connector
DC connector
Capacitor, 47pF, 0402
Capacitor, 470pF, 0603
Capacitor, 100pF, 0402
C2
C3
4
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
FMS2028
Preliminary Datasheet v2.1
PREFERRED ASSEMBLY INSTRUCTIONS:
HANDLING PRECAUTIONS:
To avoid damage to
GaAs devices are fragile and should be
handled with great care. Specially designed
collets should be used where possible.
the
devices
care
should be exercised
during
Proper
handling.
Electrostatic
The back of the die is not metallised and the
recommended mounting method is by the use
of conductive epoxy. Epoxy is should be
applied to the attachment surface uniformly
and sparingly to avoid encroachment of epoxy
on to the top face of the die and ideally should
Discharge
(ESD)
precautions should be observed at all stages
of storage, handling, assembly, and testing.
These devices should be treated as Class 1A
(0-500 V) as defined in JEDEC Standard No.
22-A114. Further information on ESD control
measures can be found in MIL-STD-1686 and
MIL-HDBK-263.
not exceed half the chip height.
For
automated dispense Ablestick LMISR4 is
recommended and for manual dispense
Ablestick 84-1 LMI or 84-1 LMIT are
recommended. These should be cured at a
temperature of 150°C for 1 hour in an oven
especially set aside for epoxy curing only. If
possible the curing oven should be flushed
with dry nitrogen.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including S-
parameters, noise data and large-signal
models are available on the Filtronic web site.
This part has gold (Au) bond pads requiring
the use of gold (99.99% pure) bondwire. It is
recommended that 25.4µm diameter gold wire
is used. Thermosonic ball bonding is preferred.
A nominal stage temperature of 150°C and a
bonding force of 40g has been shown to give
effective results for 25µm wire. Ultrasonic
energy shall be kept to a minimum. For this
bonding technique, stage temperature should
not be raised above 200°C and bond force
should not be raised above 60g. Thermosonic
wedge bonding and thermocompression
wedge bonding can also be used to achieve
good wire bonds.
DISCLAIMERS:
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
ORDERING INFORMATION:
PART NUMBER
FMS2028-000-FF
FMS2028-000-WP
FMS2028-000-EB
DESCRIPTION
Wafer mounted on film frame
Die in Waffle-pack
(Gel-pak available on request)
Bonds should be made from the die first and
then to the mounting substrate or package.
The physical length of the bondwires should be
minimised especially when making RF or
ground connections.
Die mounted on evaluation board
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Tel: +44 (0) 1325 301111
Fax: +44 (0) 1325 306177
Email: sales@filcs.com
Website: www.filtronic.com
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