SI4480DYS62Z [FAIRCHILD]
Small Signal Field-Effect Transistor, 7.6A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
| 型号： | SI4480DYS62Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Field-Effect Transistor, 7.6A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2001
Si4480DY
80V N-Channel PowerTrench MOSFET
General Description
Features
• 7.6 A, 80 V. RDS(ON = 0.029 Ω @ VGS = 10 V
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
)
RDS(ON) = 0.033 Ω @ VGS = 6 V.
• Low gate charge (34nC typical).
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(ON)
specifications.
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON)
.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency.
• High power and current handling capability.
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8
S
TA = 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
80
V
V
A
20
±
(Note 1a)
(Note 1a)
7.6
50
PD
Power Dissipation for Single Operation
2.5
W
(Note 1b)
(Note 1c)
1.2
1
C
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°
Thermal Characteristics
θ
θJC
(Note 1a)
(Note 1)
R
R
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
50
25
C/W
C/W
JA
°
°
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
4480
Si4480DY
13’’
12mm
2500 units
2001 Fairchild Semiconductor International
Si4480DY Rev. A
TA = 25°C unless otherwise noted
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min Typ Max Units
(Note 2)
Drain-Source Avalanche Ratings
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 40 V, ID = 7.6 A
245
7.6
mJ
A
IAR
Maximum Drain-Source Avalanche Current
Off Characteristics
µ
VGS = 0 V, ID = 250 A
BVDSS
Drain-Source Breakdown Voltage
80
V
∆
µ
°
°
Breakdown Voltage Temperature
Coefficient
81
DSS
BV
∆
ID = 250 A, Referenced to 25 C
mV/ C
TJ
µ
IDSS
Zero Gate Voltage Drain Current
Gate-Body Leakage, Forward
Gate-Body Leakage, Reverse
VDS = 64 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS = 0 V
1
A
IGSSF
IGSSR
100
-100
nA
nA
(Note 2)
On Characteristics
µ
VGS(th)
Gate Threshold Voltage
2
2.5
-7
4
V
V
DS = VGS, ID = 250
A
∆
µ
°
°
Gate Threshold Voltage
Temperature Coefficient
GS(th)
V
ID = 250 A, Referenced to 25 C
mV/ C
∆
TJ
Ω
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 7.6 A
VGS = 10 V, ID = 7.6 A, TJ=125 C
0.022 0.029
0.037 0.055
0.024 0.033
°
VGS
= 6 V, ID = 7 A
ID(on)
gFS
On-State Drain Current
VGS = 10 V, VDS = 5 V
30
A
S
Forward Transconductance
VDS = 5 V, ID = 7.6 A
28
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
1800
180
90
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 40 V, ID = 1 A,
VGS = 10 V, RGEN = 6
13
8
26
20
60
30
46
ns
ns
Ω
34
16
34
6.1
6.9
ns
ns
Qg
Qgs
Qgd
VDS = 40 V, ID = 7.6 A,
nC
nC
nC
VGS = 10 V
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
2.1
1.2
A
V
(Note 2)
VSD
Notes:
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A
0.74
1:
RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
c) 125° C/W when
mounted on a minimum
pad.
a) 50° C/W when
mounted on a 1 in2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in2
pad of 2 oz. copper.
Scale
1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Si4480DY Rev A
Typical Characteristics
60
2
1.8
1.6
1.4
1.2
1
VGS = 10V
5.0V
6.0V
50
VGS = 4.0V
4.5V
40
30
20
10
0
4.5V
5.0V
4.0V
6.0V
7.0V
10V
3.5V
4
0.8
0
1
2
3
5
0
10
20
30
40
50
60
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DIRAIN CURRENT (A)
Figure 2. On-Resistance Variation
Figure 1. On-Region Characteristics.
with Drain Current and Gate Voltage.
2
0.06
0.05
0.04
0.03
0.02
0.01
0
ID = 3.8A
ID = 7.6A
VGS = 10V
1.8
1.6
1.4
1.2
1
TA = 125oC
TA = 25oC
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
3
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
60
50
40
30
20
10
0
100
10
TA = -55oC
VDS = 5V
VGS = 0V
25oC
125oC
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
GS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current
and Temperature.
Si4480DY Rev A
Typical Characteristics (continued)
10
2400
2000
1600
1200
800
400
0
f = 1MHz
GS = 0 V
ID = 7.6A
VDS = 10V
V
20V
8
40V
CISS
6
4
2
0
COSS
CRSS
0
5
10
15
20
25
30
35
0
10
20
30
40
50
60
70
80
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
100
SINGLE PULSE
RθJA=125°C/W
TA = 25°C
100µs
1ms
10ms
100ms
RDS(ON) LIMIT
10
1
1s
10s
DC
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.1
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100 300
SINGLE PULSE TIME (SEC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.5
R
(t) = r(t) * R
JA
θ
J A
θ
0.2
0.2
R
= 125°C/W
J A
θ
0. 1
0.1
0.05
0.05
P(pk )
0.02
t
0.02
1
0. 0 1
t
2
0.01
S i
n
g le P ul s e
T
- T = P
*
R
( t)
JA
J
A
θ
0.005
Du t
y
C y c l e, D= t /t
2
1
0.002
0.001
0.0001
0.001
0.01
0.1
, TIME (se c)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
Si4480DY Rev A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
PowerTrench
QFET™
QS™
SyncFET™
TinyLogic™
UHC™
ACEx™
FASTr™
GlobalOptoisolator™
GTO™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
QT Optoelectronics™
VCX™
HiSeC™
Quiet Series™
SILENT SWITCHER
SMART START™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ISOPLANAR™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST
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DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. G
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