首页 |元器件品牌

SI4482DY-T1 [VISHAY]

N-Channel 100-V (D-S) MOSFET; N沟道100 -V （D -S ）的MOSFET
SI4482DY-T1
型号： SI4482DY-T1
厂家： VISHAY    VISHAY
描述：

N-Channel 100-V (D-S) MOSFET
N沟道100 -V （D -S ）的MOSFET

晶体 晶体管 功率场效应晶体管
文件： 总4页 (文件大小：43K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Si4482DY  
Vishay Siliconix  
N-Channel 100-V (D-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.060 @ V = 10 V  
4.6  
4.0  
GS  
100  
0.080 @ V = 6 V  
GS  
D
SO-8  
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View  
S
Ordering Information: Si4482DY  
Si4482DY-T1 (with Tape and Reel)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
100  
"20  
4.6  
DS  
GS  
V
V
T
= 25_C  
= 70_C  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
3.7  
A
Pulsed Drain Current  
I
40  
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
2.1  
T
= 25_C  
= 70_C  
2.5  
A
a
Maximum Power Dissipation  
P
D
W
T
A
1.6  
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
a
Maximum Junction-to-Ambient  
R
thJA  
50  
_C/W  
Notes  
a. Surface Mounted on FR4 Board, t v 10 sec.  
Document Number: 70749  
S-03951—Rev. B, 26-May-03  
www.vishay.com  
2-1  
 
Si4482DY  
Vishay Siliconix  
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typa  
Max  
Unit  
Static  
Gate Threshold Voltage  
Gate-Body Leakage  
V
V
= V , I = 250 mA  
2
V
GS(th)  
DS  
GS  
D
V
DS  
= 0 V, V = "20 V  
GS  
I
"100  
1
nA  
GSS  
V
DS  
= 100 V, V = 0 V  
GS  
Zero Gate Voltage Drain Current  
I
mA  
DSS  
V
DS  
= 100 V, V = 0 V, T = 55_C  
20  
GS  
J
b
On-State Drain Current  
I
V
= 5 V, V = 10 V  
20  
A
D(on)  
DS  
GS  
V
= 10 V, I = 4.6 A  
0.045  
0.050  
20  
0.060  
0.080  
GS  
D
b
Drain-Source On-State Resistance  
r
W
DS(on)  
V
= 6 V, I = 4.0 A  
D
GS  
b
Forward Transconductance  
g
fs  
V
DS  
= 15 V, I = 4.6 A  
S
V
D
b
Diode Forward Voltage  
V
SD  
I
S
= 2.1 A, V = 0 V  
1.2  
50  
GS  
Dynamica  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Gate Resistance  
Turn-On Delay Time  
Rise Time  
Q
30  
7.5  
7
g
Q
Q
V
= 50 V, V = 10 V, I = 4.6 A  
nC  
gs  
gd  
DS  
GS  
D
R
g
1
4.4  
25  
25  
90  
40  
80  
W
t
13  
12  
60  
25  
50  
d(on)  
t
r
V
DD  
= 50 V, R = 50 W  
L
= 10 V, R = 6 W  
GEN G  
I
^ 1 A, V  
D
Turn-Off Delay Time  
Fall Time  
t
d(off)  
ns  
t
f
Source-Drain Reverse Recovery Time  
t
rr  
I = 2.1 A, di/dt = 100 A/ms  
F
Notes  
a. For design aid only; not subject to production testing.  
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.  
Document Number: 70749  
S-03951—Rev. B, 26-May-03  
www.vishay.com  
2-2  
Si4482DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Output Characteristics  
Transfer Characteristics  
40  
32  
24  
16  
8
40  
V
GS  
= 10 thru 6 V  
30  
20  
10  
0
5 V  
T
= 125_C  
C
25_C  
1, 2, 3 V  
4 V  
-55_C  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
0
1
2
3
4
5
6
V
DS  
- Drain-to-Source Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
On-Resistance vs. Drain Current  
Capacitance  
2500  
2000  
1500  
1000  
500  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
C
iss  
V
GS  
= 6 V  
V
GS  
= 10 V  
C
oss  
C
rss  
0
0
10  
20  
30  
40  
0
20  
DS  
40  
60  
80  
100  
I
D
- Drain Current (A)  
V
- Drain-to-Source Voltage (V)  
Gate Charge  
On-Resistance vs. Junction Temperature  
10  
8
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
= 50 V  
= 4.6 A  
V
GS  
= 10 V  
DS  
I
D
I = 4.6 A  
D
6
4
2
0
0
6
12  
18  
24  
30  
-50  
-25  
0
25  
50  
75  
100 125 150  
Q
- Total Gate Charge (nC)  
T
- Junction Temperature (_C)  
g
J
Document Number: 70749  
S-03951—Rev. B, 26-May-03  
www.vishay.com  
2-3  
Si4482DY  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)  
Source-Drain Diode Forward Voltage  
On-Resistance vs. Gate-to-Source Voltage  
0.10  
0.08  
0.06  
0.04  
0.02  
0.00  
40  
I
D
= 4.6 A  
10  
T
= 150_C  
J
T
= 25_C  
J
1
0
2
4
6
8
10  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
SD  
- Source-to-Drain Voltage (V)  
V
GS  
- Gate-to-Source Voltage (V)  
Threshold Voltage  
Single Pulse Power  
0.6  
0.3  
50  
40  
30  
20  
10  
0
0.0  
I
D
= 250 µA  
-0.3  
-0.6  
-0.9  
-1.2  
-50  
-25  
0
25  
50  
75  
100 125 150  
0.01  
0.10  
1.00  
Time (sec)  
10.00  
T
- Temperature (_C)  
J
Normalized Thermal Transient Impedance, Junction-to-Ambient  
2
1
Duty Cycle = 0.5  
0.2  
Notes:  
0.1  
P
DM  
0.1  
0.05  
t
1
t
2
t
t
1
2
1. Duty Cycle, D =  
0.02  
2. Per Unit Base = R  
= 50_C/W  
thJA  
(t)  
3. T  
- T = P  
Z
JM  
A
DM thJA  
Single Pulse  
4. Surface Mounted  
0.01  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
1
10  
30  
Square Wave Pulse Duration (sec)  
Document Number: 70749  
S-03951—Rev. B, 26-May-03  
www.vishay.com  
2-4  

相关型号：

SI4483ADY

 P-Channel 30-V (D-S) MOSFET
VISHAY

SI4483ADY-T1-GE3

 P-Channel 30 V (D-S) MOSFET
VISHAY

SI4483EDY

 P-Channel 30-V (D-S) MOSFET
VISHAY

SI4483EDY-T1-E3

 P-Channel 30-V (D-S) MOSFET
VISHAY

SI4483EDY_RC

 R-C Thermal Model Parameters
VISHAY

SI4484EY

 N-Channel 100-V (D-S) MOSFET
VISHAY

SI4484EY-T1

 N-Channel 100-V (D-S) MOSFET
VISHAY

SI4484EY-T1-GE3

 Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
VISHAY

SI4484EY_06

 N-Channel 100-V (D-S) MOSFET
VISHAY

SI4485DY

 P-Channel 30 V (D-S) MOSFET
VISHAY

SI4486EY

 N-Channel 100-V (D-S) MOSFET
VISHAY

SI4486EY-T1

 N-Channel 100-V (D-S) MOSFET
VISHAY
©2020 ICPDF网 联系我们和版权申明