SI4483EDY [VISHAY]
P-Channel 30-V (D-S) MOSFET; P通道30 -V （D -S ）的MOSFET
| 型号： | SI4483EDY |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 30-V (D-S) MOSFET |
| 文件： | 总5页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4483EDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
D TrenchFETr Power MOSFET
VDS (V)
rDS(on) (W)
ID (A)
D ESD Protection: 3000 V
APPLICATIONS
0.0085 @ V = −10 V
−14
−11
GS
−30
0.014 @ V = −4.5
V
GS
D Notebook PC
− Load Switch
− Adapter Switch
S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
7100 W
Top View
Ordering Information: Si4483EDY-T1—E3
P-Channel
D
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V
−30
DS
V
V
GS
"25
T
= 25_C
= 70_C
−10
−8
−14
−11
A
a
Continuous Drain Current (T = 150_C)
I
D
J
T
A
A
Pulsed Drain Current
I
DM
−50
a
Continuous Source Current (Diode Conduction)
I
−2.7
3.0
−1.36
1.5
S
T
= 25_C
= 70_C
A
a
Maximum Power Dissipation
P
W
D
T
A
1.9
0.95
Operating Junction and Storage Temperature Range
T , T
−55 to 150
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
33
70
16
42
85
21
a
Maximum Junction-to-Ambient
R
R
thJA
_C/W
Maximum Junction-to-Foot (Drain)
thJF
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72862
S-42139—Rev. B, 15-Nov-04
www.vishay.com
1
Si4483EDY
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V , I = −250 mA
−1.0
3.0
V
GS
D
V
DS
= 0 V, V = "4.5 V
"1
mA
GS
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V = "25 V
"10
mA
GS
V
= −30 V, V = 0 V
−1
DS
GS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= −30 V, V = 0 V, T = 70_C
−10
GS
J
a
On-State Drain Current
I
V
DS
= −5 V, V = −10 V
−30
A
D(on)
GS
V
= −10 V, I = −14 A
0.007
0.0085
0.014
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= −4.5 V, I = −11 A
0.0115
GS
D
a
Forward Transconductance
g
60
S
V
V
I
= −15 V, I = −14 A
fs
DS
D
a
Diode Forward Voltage
V
SD
= −2.7 A, V = 0 V
−0.74
−1.1
S
GS
Dynamicb
Turn-On Delay Time
Rise Time
t
10
20
42
50
15
30
65
80
d(on)
t
r
V
= −15 V, R = 15 W
L
GEN g
DD
ms
I
D
^ −1 A, V
= −10 V, R = 6 W
Turn-Off Delay Time
Fall Time
t
d(off)
t
f
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
100
10
8
6
4
2
0
T
= 150_C
J
1
T
= 25_C
J
0.1
0.01
0.001
0.0001
0
5
10
15
20
25
30
0
6
12
18
24
30
V
GS
− Gate-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72862
S-42139—Rev. B, 15-Nov-04
www.vishay.com
2
Si4483EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
GS
= 10 thru 4 V
3 V
40
30
20
10
0
T
= 125_C
C
25_C
−55_C
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
DS
− Drain-to-Source Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
On-Resistance vs. Junction Temperature
0.020
0.016
0.012
0.008
0.004
0.000
1.6
1.4
1.2
1.0
0.8
0.6
V
GS
= 4.5 V
= 10 V
V
GS
0
10
20
30
40
50
−50 −25
0
25
50
75
100 125 150
I
D
− Drain Current (A)
T
− Junction Temperature (_C)
J
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
0.03
0.02
0.01
0.00
50
10
T
= 150_C
J
I
D
= 14 A
1
T
= 25_C
J
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
− Source-to-Drain Voltage (V)
V
GS
− Gate-to-Source Voltage (V)
Document Number: 72862
S-42139—Rev. B, 15-Nov-04
www.vishay.com
3
Si4483EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.8
50
40
0.6
I
D
= 250 mA
0.4
0.2
30
20
10
0
0.0
−0.2
−0.4
−50 −25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
T
− Temperature (_C)
Time (sec)
J
Safe Operating Area, Junction-to-Case
100
*Limited by r
DS(on)
10
1 ms
10 ms
1
100 ms
1 s
0.1
10 s
dc
T
= 25_C
C
Single Pulse
0.01
0.1
1
10
100
V
− Drain-to-Source Voltage (V)
DS
*V u minimum V at which r is specified
DS(on)
GS
GS
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 70_C/W
thJA
(t)
3. T − T = P Z
DM thJA
JM
A
Single Pulse
4. Surface Mounted
0.01
−4
−3
−2
−1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Document Number: 72862
S-42139—Rev. B, 15-Nov-04
www.vishay.com
4
Si4483EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
−4
−3
−2
−1
10
10
10
10
1
10
Square Wave Pulse Duration (sec)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?72862.
Document Number: 72862
S-42139—Rev. B, 15-Nov-04
www.vishay.com
5
相关型号：
SI4484EY-T1-GE3
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
VISHAY
SI4486EY-T1-E3
Small Signal Field-Effect Transistor, 5.4A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, MS-012, SOIC-8
VISHAY
SI4486EY-T1-GE3
Small Signal Field-Effect Transistor, 5.4A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
VISHAY
©2020 ICPDF网 联系我们和版权申明