SI4480EY [VISHAY]
N-Channel 80-V (D-S) MOSFET; N通道80 -V （D -S ）的MOSFET
| 型号： | SI4480EY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 80-V (D-S) MOSFET |
| 文件： | 总4页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4480EY
Vishay Siliconix
N-Channel 80-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.035 @ V = 10 V
6.2
5.8
GS
80
0.040 @ V = 6.0 V
GS
D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
S
Ordering Information: Si4480EY
Si4480EY-T1 (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
80
"20
6.2
DS
GS
V
V
T
= 25_C
= 70_C
A
a, b
Continuous Drain Current (T = 175_C)
I
J
D
T
A
5.2
A
Pulsed Drain Current
I
40
DM
a, b
Continuous Source Current (Diode Conduction)
I
S
2.5
T
= 25_C
= 70_C
3
A
a, b
Maximum Power Dissipation
P
D
W
T
A
2.1
Operating Junction and Storage Temperature Range
T , T
-55 to 175
_C
J
stg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t v 10 sec
Steady State
Steady State
40
85
20
50
100
24
a
Maximum Junction-to-Ambient
R
thJA
R
thJL
_C/W
Maximum Junction-to-Lead
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. t v 10 sec.
Document Number: 71060
S-03951—Rev. B, 26-May-03
www.vishay.com
2-1
Si4480EY
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typb
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
2
V
GS(th)
DS
GS
D
V
DS
= 0 V, V = "20 V
GS
I
"100
1
nA
GSS
V
= 80 V, V = 0 V
GS
DS
Zero Gate Voltage Drain Current
I
mA
DSS
V
DS
= 80 V, V = 0 V, T = 55_C
20
GS
J
a
On-State Drain Curren
I
V
= 5 V, V = 10 V
20
A
D(on)
DS
GS
V
= 10 V, I = 6.2 A
0.026
0.030
25
0.035
0.040
GS
GS
D
a
Drain-Source On-State Resistance
r
W
DS(on)
V
= 6.0 V, I = 5.8 A
D
a
Forward Transconductance
g
fs
V
DS
= 15 V, I = 6.2 A
S
V
D
a
Diode Forward Voltage
V
SD
I
S
= 2.1 A, V = 0 V
1.2
50
GS
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
30
9
g
Q
Q
V
= 40 V, V = 10 V, I = 6.2 A
nC
gs
gd
DS
GS
D
5.6
R
g
1.5
4.0
25
25
80
40
80
W
t
12.5
12.5
52
d(on)
t
r
V
DD
= 40 V, R = 30 W
L
= 10 V, R = 6 W
GEN G
I
^ 1 A, V
D
Turn-Off Delay Time
Fall Time
t
d(off)
ns
t
f
22
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.1 A, di/dt = 100 A/ms
50
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
40
32
24
16
8
V
GS
= 10 thru 6 V
32
24
16
8
5 V
T
= 125_C
C
25_C
-55_C
4 V
0
0
0.0
0.8
1.6
2.4
3.2
4.0
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71060
S-03951—Rev. B, 26-May-03
www.vishay.com
2-2
Si4480EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
2500
0.05
0.04
0.03
0.02
0.01
0.00
C
iss
2000
1500
1000
500
0
V
GS
= 6 V
V
GS
= 10 V
C
oss
C
rss
0
10
20
30
40
0
10
20
30
40
50
60
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 40 V
= 6.0 A
DS
V
= 10 V
= 6 A
GS
I
D
I
D
6
4
2
0
0
6
12
18
24
30
-50 -25
0
25
50
75 100 125 150 175
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Source-Drain Diode Forward Voltage
On-Resistancevs. Gate-to-Source Voltage
0.06
40
10
0.05
0.04
0.03
0.02
0.01
0.00
I
D
= 6.0 A
T
= 175_C
J
T
= 25_C
J
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
4
5
6
7
8
9
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 71060
S-03951—Rev. B, 26-May-03
www.vishay.com
2-3
Si4480EY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.5
50
40
30
0.0
-0.5
-1.0
-1.5
I
D
= 250 mA
20
10
0
-2
-1
-50 -25
0
25
50
75 100 125 150 175
10
10
1
10
100
600
T
- Temperature (_C)
Time (sec)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 85_C/W
thJA
(t)
3. T
- T = P Z
A DM thJA
JM
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
0.5
0.2
0.1
0.1
0.01
0.05
0.02
Single Pulse
0.001
0.0001
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
100
Document Number: 71060
S-03951—Rev. B, 26-May-03
www.vishay.com
2-4
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VISHAY
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