QED633 [FAIRCHILD]

Infrared LED, 5mm, 1-Element, 940nm, PLASTIC PACKAGE-2;
QED633
型号: QED633
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Infrared LED, 5mm, 1-Element, 940nm, PLASTIC PACKAGE-2

光电 半导体
文件: 总4页 (文件大小:86K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PLASTIC INFRARED  
LIGHT EMITTING DIODE  
QED633  
QED634  
PACKAGE DIMENSIONS  
0.195 (4.95)  
REFERENCE  
SURFACE  
0.305 (7.75)  
0.040 (1.02)  
NOM  
0.800 (20.3)  
MIN  
0.050 (1.25)  
CATHODE  
0.100 (2.54)  
NOM  
0.240 (6.10)  
0.215 (5.45)  
0.020 (0.51)  
SQ. (2X)  
SCHEMATIC  
NOTES:  
ANODE  
1. Dimensions for all drawings are in inches (mm).  
2. Tolerance of .010 (.25) on all nonꢀnominal dimensions  
unless otherwise specified.  
CATHODE  
DESCRIPTION  
The QED634 is a 940 nm GaAs / AlGaAs LED encapsulated in a clear untinted, plastic Tꢀ1 3/4 package.  
FEATURES  
= 940 nm  
• Chip material =GaAs with AlGaAs window  
• Package type: T-1 3/4 (5mm lens diameter)  
• Matched Photosensor: QSD122/123/124  
• Wide Emission Angle, 55°  
• High Output Power  
• Package material and color: Clear, untinted, plastic  
• Ideal for remote control applications  
2001 Fairchild Semiconductor Corporation  
DS300207  
6/8/01  
1 OF 4  
www.fairchildsemi.com  
PLASTIC INFRARED  
LIGHT EMITTING DIODE  
QED633  
QED634  
(T = 25°C unless otherwise specified)  
ABSOLUTE MAXIMUM RATINGS  
A
Parameter  
Operating Temperature  
Storage Temperature  
Soldering Temperature (Iron)(2,3,4)  
Soldering Temperature (Flow)(2,3)  
Continuous Forward Current  
Reverse Voltage  
Symbol  
TOPR  
TSTG  
TSOLꢀI  
TSOLꢀF  
IF  
Rating  
ꢀ40 to +100  
ꢀ40 to +100  
240 for 5 sec  
260 for 10 sec  
100  
Unit  
°C  
°C  
°C  
°C  
mA  
V
VR  
5
Power Dissipation(1)  
PD  
200  
mW  
A
Peak Forward Current  
IFP  
1.5  
1. Derate power dissipation linearly 2.67 mW/°C above 25°C.  
2. RMA flux is recommended.  
3. Methanol or isopropyl alcohols are recommended as cleaning agents.  
4. Soldering iron 1/16(1.6mm) minimum from housing.  
5. Pulse conditions; tp = 100 µs, T = 10 ms.  
(TA =25°C)  
ELECTRICAL / OPTICAL CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
IF = 20 mA  
DEVICE  
ALL  
SYMBOL  
PE  
MIN  
50  
15  
20  
TYP  
MAX  
UNITS  
Peak Emission Wavelength  
Spectral Bandwidth  
Temp. Coefficient of PE  
Emission Angle  
940  
nm  
IF = 20 mA  
ALL  
nm  
IF = 100 mA  
ALL  
TCꢀ  
0.2  
55  
nm/K  
Deg.  
V
IF = 100 mA  
ALL  
21/  
2
Forward Voltage  
IF = 100 mA, tp = 20 ms  
IF = 100 mA  
ALL  
VF  
1.6  
Temp. Coefficient of VF  
Reverse Current  
ALL  
TCV  
IR  
ꢀ1.5  
mV/K  
µA  
VR = 5 V  
ALL  
10  
QED633  
QED634  
ALL  
25  
Radiant Intensity  
IF = 100 mA, tp = 20 ms  
IE  
mW/sr  
25  
Temp. Coefficient of IE  
Rise Time  
IF = 20 mA  
TCI  
tr  
ꢀ0.6  
1000  
1000  
%/K  
ns  
ALL  
IF = 100 mA  
Fall Time  
ALL  
tf  
www.fairchildsemi.com  
2 OF 4  
6/8/01  
DS300207  
PLASTIC INFRARED  
LIGHT EMITTING DIODE  
QED633  
QED634  
TYPICAL PERFORMANCE CURVES TBD  
Fig. 1 Normalized Radiant Intensity vs. Forward Current  
Fig. 2 Forward Voltage Vs. Ambient Temperature  
10  
2.0  
1.5  
1.0  
0.5  
0.0  
I
= 50mA  
I =100mA  
F
F
Normalized to:  
I
= 100 mA  
1
0.1  
F
T
A
= 25˚C  
t
= 100 µs  
pw  
I
=10mA  
I =20mA  
F
F
0.01  
I
t
Pulsed  
F
= 100 µs  
pw  
Duty Cycle = 0.1%  
-40  
-20  
0
20  
40  
60  
80  
100  
1
10  
100  
1000 1500  
I
- FORWARD CURRENT (mA)  
T
ꢀ AMBIENT TEMPERATURE (˚ C)  
A
F
Fig. 3 Normalized Radiant Intensity vs. Wavelength  
Fig. 4 Radiation Diagram  
90  
100  
80  
1.0  
0.8  
0.6  
0.4  
0.2  
0
110  
70  
120  
60  
130  
50  
140  
150  
160  
40  
30  
20  
10  
0
170  
180  
800  
850  
900  
950  
1000  
1050  
0.0  
0.2  
0.4  
0.6  
0.4  
0.2  
0.6  
0.8  
1.0  
1.0  
0.8  
λλ(nm)  
Fig. 5 Forward Current vs. Forward Voltage  
1000  
100  
10  
T
= 25˚C  
A
1
1
2
3
4
V
- FORWARD VOLTAGE (V)  
F
DS300207  
6/8/01  
3 OF 4  
www.fairchildsemi.com  
PLASTIC INFRARED  
LIGHT EMITTING DIODE  
QED633  
QED634  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE  
TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT  
ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT  
DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE  
RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD  
SEMICONDUCTOR CORPORATION. As used herein:  
2. A critical component in any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life  
support device or system, or to affect its safety or  
effectiveness.  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical  
implant into the body,or (b) support or sustain life,  
and (c) whose failure to perform when properly  
used in accordance with instructions for use provided  
in labeling, can be reasonably expected to result in a  
significant injury of the user.  
www.fairchildsemi.com  
4 OF 4  
6/8/01  
DS300207  

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