QEE123 [FAIRCHILD]
PLASTIC INFRARED LIGHT EMITTING DIODE; 塑料红外发光二极管
| 型号： | QEE123 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PLASTIC INFRARED LIGHT EMITTING DIODE |
| 文件： | 总4页 (文件大小：335K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE122 QEE123
PACKAGE DIMENSIONS
0.175 (4.44)
0.087 (2.22)
Ø0.065 (1.65)
0.050 (1.27)
0.200 (5.08)
Ø0.095 (2.41)
0.500 (12.70)
MIN
CATHODE
ANODE
0.020 (0.51) SQ.
(2X)
SCHEMATIC
0.100 (2.54)
0.030 (0.76)
0.100 (2.54)
NOM
ANODE
CATHODE
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of .010 (.25) on all nonꢀnominal dimensions ꢁnless
otherwise specified.
DESCRIPTION
The QEE12X is a 880 nm AlGaAs LED encapsulated in a medium wide angle, plastic sidelooker package.
FEATURES
•
•
•
•
•
•
•
•
λ= 880 nm
Package Type = Sidelooker
Chip Material = AlGaAs
Matched Photosensor: QSE113
Medium Wide Emission Angle, 50°
Package Material: Clear Epoxy
High Output Power
Orange stripe on the top side
© 2002 Fairchild Semiconductor Corporation
Page 1 of 4
4/30/02
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE122 QEE123
ABSOLUTE MAXIMUM RATINGS (T = 25°C ꢁnless otherwise specified)
A
Parameter
Symbol
Rating
ꢀ40 to + 100
ꢀ40 to + 100
240 for 5 sec
260 for 10 sec
50
Unit
°C
T
Operating Temperatꢁre
Storage Temperatꢁre
OPR
T
°C
STG
(2,3,4)
(2,3)
T
°C
Soldering Temperatꢁre (Iron)
SOLꢀI
T
°C
Soldering Temperatꢁre (Flow)
Continꢁoꢁs Forward Cꢁrrent
Reverse Voltage
SOLꢀF
I
mA
V
F
V
5
R
(1)
P
100
mW
Power Dissipation
D
NOTES:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flꢁx is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimꢁm from hoꢁsing
.
ELECTRICAL / OPTICAL CHARACTERISTICS (T =25°C)
A
Parameter
Test Conditions
Symbol
Min
—
—
—
—
4
Typ
940
50
Max
—
Units
I = 100 mA
λ
PE
Peak Emission Wavelength
Emission Angle
nm
Deg.
V
F
I = 100 mA
2Θ1/2
—
F
I = 100 mA, tp = 20 ms
V
Forward Voltage
Reverse Cꢁrrent
Radiant Intensity QEE122
Radiant Intensity QEE123
Rise Time
—
1.7
10
16
—
F
F
V = 5 V
I
—
µA
R
R
I = 100 mA, tp = 20 ms
I
—
mW/sr
mW/sr
ns
F
E
I = 100 mA, tp = 20 ms
I
8
—
F
E
t
—
—
800
800
—
r
I = 100 mA
F
t
Fall Time
—
ns
f
© 2002 Fairchild Semicondꢁctor Corporation
Page 2 of 4
4/30/02
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE122 QEE123
Fig.1 Normalized Radiant Intensity vs. Forward Current
Fig.2 Coupling Characteristics of QEE123 And QSE113
10
1.0
Normalized to:
Normalized to:
d = 0
I
t
= 100 mA Pꢁlsed
F
= 100 µs
I
t
Pꢁlsed
pw
F
0.8
0.6
0.4
0.2
0.0
Dꢁty Cycle = 0.1 %
= 100 µs
pw
1
0.1
T
= 25˚C
Dꢁty Cycle = 0.1 %
A
V
R
= 5 V
= 100 Ω
= 25˚C
CC
L
T
A
I
= 100 mA
0.01
0.001
F
I
= 20 mA
F
0
1
2
3
4
5
6
1
10
100
1000
I
ꢀ FORWARD CURRENT (mA)
LENS TIP SEPARATION (INCHES)
F
Fig. 4 Normalized Intensity vs. Wavelength
Fig.3 Forward Voltage vs. Ambient Temperature
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
2.0
1.5
1.0
0.5
0.0
I
F
= 50 mA
I
= 100 mA
= 10 mA
F
F
I
I
= 20 mA
F
Normalized to:
I
t
Pꢁlsed
F
= 100 µs
pw
Dꢁty Cycle = 0.1 %
775
800
825
850
875
900
925
950
ꢀ40
ꢀ20
0
20
40
60
80
100
λ (nm)
T
ꢀ AMBIENT TEMPERATURE (˚C)
A
Fig. 5 Radiation Diagram
90
100
80
110
70
120
60
130
50
140
150
40
30
160
170
20
10
180
0
0.2
0.0
0.2
0.4
0.6
0.8
1.0
1.0
0.8
0.6
0.4
© 2002 Fairchild Semicondꢁctor Corporation
Page 3 of 4
4/30/02
PLASTIC INFRARED
LIGHT EMITTING DIODE
QEE122 QEE123
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As ꢁsed herein:
1. Life sꢁpport devices or systems are devices or systems
which, (a) are intended for sꢁrgical implant into the body, or
(b) sꢁpport or sꢁstain life, and (c) whose failꢁre to perform
when properly ꢁsed in accordance with instrꢁctions for ꢁse
provided in the labeling, can be reasonably expected to
resꢁlt in a significant injꢁry of the ꢁser.
2. A critical component in any component of a life sꢁpport
device or system whose failꢁre to perform can be
reasonably expected to caꢁse the failꢁre of the life sꢁpport
device or system, or to affect its safety or effectiveness.
© 2002 Fairchild Semicondꢁctor Corporation
Page 4 of 4
4/30/02
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