QEE113 [FAIRCHILD]

PLASTIC INFRARED LIGHT EMITTING DIODE; 塑料红外发光二极管
QEE113
型号: QEE113
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

PLASTIC INFRARED LIGHT EMITTING DIODE
塑料红外发光二极管

光电 二极管 PC
文件: 总4页 (文件大小:335K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PLASTIC INFRARED  
LIGHT EMITTING DIODE  
QEE113  
PACKAGE DIMENSIONS  
0.175 (4.44)  
0.087 (2.22)  
Ø0.065 (1.65)  
0.050 (1.27)  
0.200 (5.08)  
Ø0.095 (2.41)  
0.500 (12.70)  
MIN  
CATHODE  
ANODE  
0.020 (0.51) SQ.  
(2X)  
SCHEMATIC  
0.100 (2.54)  
0.030 (0.76)  
0.100 (2.54)  
NOM  
ANODE  
CATHODE  
NOTES:  
1. Dimensions for all drawings are in inches (mm).  
2. Tolerance of .010 (.25) on all nonꢀnominal dimensions ꢁnless  
otherwise specied.  
DESCRIPTION  
The QEE113 is a 940 nm GaAs LED encapsulated in a medium wide angle, plastic sidelooker package.  
FEATURES  
λ= 940 nm  
Package Type = Sidelooker  
Chip Material = GaAs  
Matched Photosensor: QSE113  
Medium Wide Emission Angle, 50°  
Package Material: Clear Epoxy  
High Output Power  
Gray stripe on the top side  
© 2002 Fairchild Semiconductor Corporation  
Page 1 of 4  
4/30/02  
PLASTIC INFRARED  
LIGHT EMITTING DIODE  
QEE113  
ABSOLUTE MAXIMUM RATINGS (T = 25°C ꢁnless otherwise specied)  
A
Parameter  
Symbol  
Rating  
ꢀ40 to +100  
ꢀ40 to +100  
240 for 5 sec  
260 for 10 sec  
50  
Unit  
°C  
T
Operating Temperatꢁre  
Storage Temperatꢁre  
OPR  
T
°C  
STG  
(2,3,4)  
(2,3)  
T
°C  
Soldering Temperatꢁre (Iron)  
SOLꢀI  
T
°C  
Soldering Temperatꢁre (Flow)  
Continꢁoꢁs Forward Cꢁrrent  
Reverse Voltage  
SOLꢀF  
I
mA  
V
F
V
5
R
(1)  
P
100  
mW  
Power Dissipation  
D
NOTES:  
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.  
2. RMA ꢁx is recommended.  
3. Methanol or isopropyl alcohols are recommended as cleaning agents.  
4. Soldering iron 1/16" (1.6 mm) minimꢁm from hoꢁsing.  
ELECTRICAL / OPTICAL CHARACTERISTICS (T =25°C)  
A
Parameter  
Test Conditions  
Symbol  
Min  
3
Typ  
940  
50  
Max  
Units  
I = 100 mA  
λ
PE  
Peak Emission Wavelength  
Emission Angle  
Forward Voltage  
Reverse Cꢁrrent  
Radiant Intensity  
Rise Time  
nm  
Deg.  
V
F
I = 100 mA  
2Θ1/2  
F
I = 100 mA, tp = 20 ms  
V
1.5  
10  
12  
F
F
V = 5 V  
I
µA  
R
R
I = 100 mA, tp = 20 ms  
I
mW/sr  
ns  
F
E
t
1000  
1000  
r
I = 100 mA  
F
t
Fall Time  
ns  
f
© 2002 Fairchild Semicondꢁctor Corporation  
Page 2 of 4  
4/30/02  
PLASTIC INFRARED  
LIGHT EMITTING DIODE  
QEE113  
Fig.1 Normalized Radiant Intensity vs. Forward Current  
Fig.2 Coupling Characteristics of QEE113 And QSE113  
10  
1.0  
Normalized to:  
Normalized to:  
d = 0  
I
t
= 100 mA Pꢁlsed  
F
= 100 µs  
I
t
Pꢁlsed  
pw  
F
0.8  
0.6  
0.4  
0.2  
0.0  
Dꢁty Cycle = 0.1 %  
T
= 100 µs  
pw  
1
= 25˚C  
Dꢁty Cycle = 0.1 %  
A
V
R
= 5 V  
= 100 Ω  
= 25˚C  
CC  
L
T
A
0.1  
I
= 100 mA  
0.01  
F
I
= 20 mA  
F
0.001  
1
10  
100  
1000  
0
1
2
3
4
5
6
LENS TIP SEPARATION (INCHES)  
I
ꢀ FORWARD CURRENT (mA)  
F
Fig. 4 Normalized Intensity vs. Wavelength  
Fig.3 Forward Voltage vs. Ambient Temperature  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
2.0  
1.5  
1.0  
0.5  
0.0  
I
= 100 mA  
F
I
F
= 50 mA  
I
F
= 20 mA  
I
F
= 10 mA  
Normalized to:  
I
t
Pꢁlsed  
F
= 100 µs  
pw  
Dꢁty Cycle = 0.1 %  
875  
900  
925  
950  
975  
1000  
1025  
ꢀ40  
ꢀ20  
0
20  
40  
60  
80  
100  
λ (nm)  
T
ꢀ AMBIENT TEMPERATURE (˚C)  
A
Fig. 5 Radiation Diagram  
90  
100  
80  
110  
70  
120  
60  
130  
50  
140  
150  
40  
30  
160  
170  
20  
10  
180  
0
0.2  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.0  
0.8  
0.6  
0.4  
© 2002 Fairchild Semicondꢁctor Corporation  
Page 3 of 4  
4/30/02  
PLASTIC INFRARED  
LIGHT EMITTING DIODE  
QEE113  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO  
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME  
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES  
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR  
CORPORATION. As ꢁsed herein:  
1. Life sꢁpport devices or systems are devices or systems  
which, (a) are intended for sꢁrgical implant into the body, or  
(b) sꢁpport or sꢁstain life, and (c) whose failꢁre to perform  
when properly ꢁsed in accordance with instrꢁctions for ꢁse  
provided in the labeling, can be reasonably expected to  
resꢁlt in a significant injꢁry of the ꢁser.  
2. A critical component in any component of a life sꢁpport  
device or system whose failꢁre to perform can be  
reasonably expected to caꢁse the failꢁre of the life sꢁpport  
device or system, or to affect its safety or effectiveness.  
© 2002 Fairchild Semicondꢁctor Corporation  
Page 4 of 4  
4/30/02  

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