QED522 [FAIRCHILD]

PLASTIC INFRARED LIGHT EMITTING DIODE; 塑料红外发光二极管
QED522
型号: QED522
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

PLASTIC INFRARED LIGHT EMITTING DIODE
塑料红外发光二极管

光电 二极管
文件: 总4页 (文件大小:385K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PLASTIC INFRARED  
LIGHT EMITTING DIODE  
QED522 QED523  
PACKAGE DIMENSIONS  
0.190 (4.83)  
0.178 (4.52)  
REFERENCE  
SURFACE  
0.220 (5.59)  
0.030 (0.76)  
NOM  
0.800 (20.3)  
MIN  
0.050 (1.27)  
CATHODE  
0.100 (2.54)  
NOM  
Ø 0.215 (5.46)  
NOM  
SCHEMATIC  
45°  
0.020 (0.51)  
SQ. (2X)  
ANODE  
R 0.022 (0.56)  
CATHODE  
NOTES:  
1. Dimensions for all drawings are in inches (mm).  
2. Tolerance of .010 (.25) on all nonꢀnominal dimensions ꢁnless  
otherwise specied.  
DESCRIPTION  
The QED522/523 is an 880 nm AlGaAs LED encapsulated in a clear, peach tinted, plastic TO-46 package.  
FEATURES  
λ= 880 nm  
Chip material = AlGaAs  
Package type: Plastic TO-46  
Matched Photosensor: QSD722/723/724  
Narrow Emission Angle, 20°  
High Output Power  
Package material and color: clear, peach tinted, plastic  
© 2002 Fairchild Semiconductor Corporation  
Page 1 of 4  
6/13/02  
PLASTIC INFRARED  
LIGHT EMITTING DIODE  
QED522 QED523  
ABSOLUTE MAXIMUM RATINGS (T = 25°C ꢁnless otherwise specied)  
A
Parameter  
Symbol  
Rating  
ꢀ40 to + 100  
ꢀ40 to + 100  
240 for 5 sec  
260 for 10 sec  
100  
Unit  
°C  
T
Operating Temperatꢁre  
Storage Temperatꢁre  
OPR  
T
°C  
STG  
(2,3,4)  
(2,3)  
T
°C  
Soldering Temperatꢁre (Iron)  
SOLꢀI  
T
°C  
Soldering Temperatꢁre (Flow)  
Continꢁoꢁs Forward Cꢁrrent  
Reverse Voltage  
SOLꢀF  
I
mA  
V
F
V
5
R
(1)  
P
200  
mW  
Power Dissipation  
D
NOTES:  
1. Derate power dissipation linearly 2.67 mW/°C above 25°C.  
2. RMA ꢁx is recommended.  
3. Methanol or isopropyl alcohols are recommended as cleaning agents.  
4. Soldering iron 1/16" (1.6 mm) minimꢁm from hoꢁsing  
.
ELECTRICAL / OPTICAL CHARACTERISTICS (T =25°C)  
A
Parameter  
Test Conditions  
Symbol  
Min  
Typ  
880  
20  
Max  
Units  
I = 100 mA  
λ
PE  
Peak Emission Wavelength  
Emission Angle  
nm  
Deg.  
V
F
I = 100 mA  
2Θ1/2  
F
I = 100 mA, tp = 20 ms  
V
Forward Voltage  
Reverse Cꢁrrent  
Radiant Intensity QEC522  
Radiant Intensity QEC523  
Rise Time  
1.8  
10  
80  
F
F
V = 5 V  
I
µA  
R
R
I = 100 mA, tp = 20 ms  
I
20  
40  
mW/sr  
mW/sr  
ns  
F
E
I = 100 mA, tp = 20 ms  
I
F
E
t
800  
800  
r
I = 100 mA  
F
t
Fall Time  
ns  
f
© 2002 Fairchild Semicondꢁctor Corporation  
Page 2 of 4  
6/13/02  
PLASTIC INFRARED  
LIGHT EMITTING DIODE  
QED522 QED523  
Fig. 1 Normalized Radiant Intensity vs. Forward Current  
Fig. 2 Forward Voltage vs. Ambient Temperature  
10  
2.0  
I
= 50 mA  
Normalized to:  
F
I
t
= 100 mA Pꢁlsed  
F
= 100 µs  
pw  
I
I
= 100 mA  
= 10 mA  
F
F
Dꢁty Cycle = 0.1 %  
= 25°C  
1
0.1  
1.5  
1.0  
0.5  
0.0  
T
A
I
= 20 mA  
F
0.01  
0.001  
Normalized to:  
I
t
Pꢁlsed  
F
= 100 µs  
pw  
Dꢁty Cycle = 0.1 %  
1
10  
100  
1000  
ꢀ40  
ꢀ20  
0
20  
40  
60  
80  
100  
I
F
ꢀ FORWARD CURRENT (mA)  
T
A
ꢀ AMBIENT TEMPERATURE (°C)  
Fig. 3 Normalized Radiant Intensity vs. Wavelength  
1.0  
Fig. 4 Radiation Diagram  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
90  
100  
80  
110  
70  
120  
60  
130  
50  
140  
40  
150  
160  
170  
30  
20  
10  
0
180  
0.2  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.0  
0.8  
0.6  
0.4  
775  
800  
825  
850  
875  
900  
925  
950  
λ(nm)  
© 2002 Fairchild Semicondꢁctor Corporation  
Page 3 of 4  
6/13/02  
PLASTIC INFRARED  
LIGHT EMITTING DIODE  
QED522 QED523  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO  
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME  
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES  
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR  
CORPORATION. As ꢁsed herein:  
1. Life sꢁpport devices or systems are devices or systems  
which, (a) are intended for sꢁrgical implant into the body, or  
(b) sꢁpport or sꢁstain life, and (c) whose failꢁre to perform  
when properly ꢁsed in accordance with instrꢁctions for ꢁse  
provided in the labeling, can be reasonably expected to  
resꢁlt in a significant injꢁry of the ꢁser.  
2. A critical component in any component of a life sꢁpport  
device or system whose failꢁre to perform can be  
reasonably expected to caꢁse the failꢁre of the life sꢁpport  
device or system, or to affect its safety or effectiveness.  
© 2002 Fairchild Semicondꢁctor Corporation  
Page 4 of 4  
6/13/02  

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