FJD5304DTF [FAIRCHILD]
High Voltage Fast Switching Transistor; 高压快速开关晶体管型号: | FJD5304DTF |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | High Voltage Fast Switching Transistor |
文件: | 总6页 (文件大小:178K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FJD5304D
High Voltage Fast Switching Transistor
Features
•
•
•
•
Built-in Free Wheeling Diode
Wide Safe Operating Area
Small Variance in Storage Time
Suitable for Electronic Ballast Application
Equivalent Circuit
C
B
D-PACK
1. Base 2. Collector 3. Emitter
1
E
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
700
Units
V
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
400
V
12
V
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
4
A
ICP
IB
8
A
2
4
A
IBP
* Base Current (Pulse)
Collector Dissipation (TC = 25°C)
Junction Temperature
Storage Temperature
A
PC
30
W
°C
°C
TJ
150
TSTG
-55 ~ 150
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed
Package Marking and Ordering Information
Device Marking
J5304D
Device
FJD5304DTM
Package
D-PAK
Reel Size
13” Dia
Tape Width
Quantity
2500
-
J5304D
FJD5304DTF
D-PAK
13” Dia
-
2000
©2005 Fairchild Semiconductor Corporation
FJD5304D Rev. A
1
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Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
BVCBO
BVCEO
BVEBO
ICES
Parameter
Conditions
IC = 1mA, IE = 0
Min.
700
400
12
Typ.
Max Units
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
V
V
V
IC = 5mA, IB = 0
IE = 1mA, IC = 0
VCB = 700V, IE = 0
VCB = 400V, IB = 0
VEB = 12V, IC = 0
VCE = 5V, IC = 10mA
100
250
1
µA
µA
ICEO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
mA
hFE
DC Current Gain
10
8
V
CE = 5V, IC = 2.0A
40
VCE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 0.5A, IB = 0.1A
IC = 1.0A, IB = 0.2A
IC = 2.5A, IB = 0.5A
IC = 0.5A, IB = 0.1A
IC = 1.0A, IB = 0.2A
IC = 2.5A, IB = 0.5A
0.7
1.0
1.5
1.1
1.2
1.3
V
V
V
VBE(sat)
V
V
V
tSTG
tF
tSTG
tF
Storage Time
Fall Time
0.6
0.1
µs
µs
µs
µs
VCLAMP=200V, IC=2.0A
I
B1=0.4A, VBE(off)=-5V, L=200µH
Storage Time
Fall Time
2.9
VCC=250V, IC=2.0A
I
B1=0.4A, IB2=-0.4A, TP=30µs
0.2
2
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FJD5304D Rev. A
Typical Performance Characteristics
Figure 1. Static Characterstic
Figure 2. DC Current Gain
4.0
100
10
1
IB=300mA
3.5
TC=125oC
3.0
IB=150mA
2.5
TC= - 25oC
TC=25oC
IB=100mA
2.0
IB=50mA
1.5
1.0
0.5
0.0
0
2
4
6
8
10
12
0.01
0.1
1
10
VCE [V]. COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
10
10
IC = 5 IB
IC = 5 IB
TC=125oC
1
TC=25oC
TC= - 25oC
1
TC= - 25oC
0.1
TC=25oC
TC=125oC
0.01
0.1
0.01
0.1
1
10
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 5. Resistive Load Switching Time
Figure 6. Forward Biased Safe Operating Area
10
100
tSTG
Pulse IC_MAX
10
1µs
1
10µs
DC IC_MAX
1
1ms
tF
0.1
0.1
TC = 25oC
Single Pulse
VCC=250V
IC= 5 IB1= - 5 IB2
0.01
0.01
0.1
1
10
1
10
100
1000
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
3
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FJD5304D Rev. A
Typical Performance Characteristics (Continued)
Figure 7. Reverse Biased Safe Operating Area
Figure 8. Power Derating Curve
10
Vcc=50V, L = 1mH
9
IB1=1A, IB2 = -1A
40
20
0
8
7
6
5
4
3
2
1
0
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
800
900 1000
TC [oC], CASE TEMPERATURE
VCE [V], COLLECTOR-EMITTER VOLTAGE
4
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FJD5304D Rev. A
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
5
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FJD5304D Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to
be an exhaustive list of all such trademarks.
®
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®
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®
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2
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OPTOLOGIC
FACT™
®
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VCX™
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®
OPTOPLANAR™
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SPM™
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I13
6
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FJD5304D Rev. A
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