FJD5304DTF [FAIRCHILD]

High Voltage Fast Switching Transistor; 高压快速开关晶体管
FJD5304DTF
型号: FJD5304DTF
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

High Voltage Fast Switching Transistor
高压快速开关晶体管

晶体 开关 晶体管 高压
文件: 总6页 (文件大小:178K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
FJD5304D  
High Voltage Fast Switching Transistor  
Features  
Built-in Free Wheeling Diode  
Wide Safe Operating Area  
Small Variance in Storage Time  
Suitable for Electronic Ballast Application  
Equivalent Circuit  
C
B
D-PACK  
1. Base 2. Collector 3. Emitter  
1
E
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
VCBO  
Parameter  
Collector-Base Voltage  
Value  
700  
Units  
V
VCEO  
VEBO  
IC  
Collector-Emitter Voltage  
Emitter-Base Voltage  
400  
V
12  
V
Collector Current (DC)  
* Collector Current (Pulse)  
Base Current (DC)  
4
A
ICP  
IB  
8
A
2
4
A
IBP  
* Base Current (Pulse)  
Collector Dissipation (TC = 25°C)  
Junction Temperature  
Storage Temperature  
A
PC  
30  
W
°C  
°C  
TJ  
150  
TSTG  
-55 ~ 150  
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed  
Package Marking and Ordering Information  
Device Marking  
J5304D  
Device  
FJD5304DTM  
Package  
D-PAK  
Reel Size  
13” Dia  
Tape Width  
Quantity  
2500  
-
J5304D  
FJD5304DTF  
D-PAK  
13” Dia  
-
2000  
©2005 Fairchild Semiconductor Corporation  
FJD5304D Rev. A  
1
www.fairchildsemi.com  
Electrical Characteristics  
T = 25°C unless otherwise noted  
C
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICES  
Parameter  
Conditions  
IC = 1mA, IE = 0  
Min.  
700  
400  
12  
Typ.  
Max Units  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
V
V
V
IC = 5mA, IB = 0  
IE = 1mA, IC = 0  
VCB = 700V, IE = 0  
VCB = 400V, IB = 0  
VEB = 12V, IC = 0  
VCE = 5V, IC = 10mA  
100  
250  
1
µA  
µA  
ICEO  
Collector Cut-off Current  
IEBO  
Emitter Cut-off Current  
mA  
hFE  
DC Current Gain  
10  
8
V
CE = 5V, IC = 2.0A  
40  
VCE(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
IC = 0.5A, IB = 0.1A  
IC = 1.0A, IB = 0.2A  
IC = 2.5A, IB = 0.5A  
IC = 0.5A, IB = 0.1A  
IC = 1.0A, IB = 0.2A  
IC = 2.5A, IB = 0.5A  
0.7  
1.0  
1.5  
1.1  
1.2  
1.3  
V
V
V
VBE(sat)  
V
V
V
tSTG  
tF  
tSTG  
tF  
Storage Time  
Fall Time  
0.6  
0.1  
µs  
µs  
µs  
µs  
VCLAMP=200V, IC=2.0A  
I
B1=0.4A, VBE(off)=-5V, L=200µH  
Storage Time  
Fall Time  
2.9  
VCC=250V, IC=2.0A  
I
B1=0.4A, IB2=-0.4A, TP=30µs  
0.2  
2
www.fairchildsemi.com  
FJD5304D Rev. A  
Typical Performance Characteristics  
Figure 1. Static Characterstic  
Figure 2. DC Current Gain  
4.0  
100  
10  
1
IB=300mA  
3.5  
TC=125oC  
3.0  
IB=150mA  
2.5  
TC= - 25oC  
TC=25oC  
IB=100mA  
2.0  
IB=50mA  
1.5  
1.0  
0.5  
0.0  
0
2
4
6
8
10  
12  
0.01  
0.1  
1
10  
VCE [V]. COLLECTOR-EMITTER VOLTAGE  
IC [A], COLLECTOR CURRENT  
Figure 3. Collector-Emitter Saturation Voltage  
Figure 4. Base-Emitter Saturation Voltage  
10  
10  
IC = 5 IB  
IC = 5 IB  
TC=125oC  
1
TC=25oC  
TC= - 25oC  
1
TC= - 25oC  
0.1  
TC=25oC  
TC=125oC  
0.01  
0.1  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
IC [A], COLLECTOR CURRENT  
IC [A], COLLECTOR CURRENT  
Figure 5. Resistive Load Switching Time  
Figure 6. Forward Biased Safe Operating Area  
10  
100  
tSTG  
Pulse IC_MAX  
10  
1µs  
1
10µs  
DC IC_MAX  
1
1ms  
tF  
0.1  
0.1  
TC = 25oC  
Single Pulse  
VCC=250V  
IC= 5 IB1= - 5 IB2  
0.01  
0.01  
0.1  
1
10  
1
10  
100  
1000  
IC [A], COLLECTOR CURRENT  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
3
www.fairchildsemi.com  
FJD5304D Rev. A  
Typical Performance Characteristics (Continued)  
Figure 7. Reverse Biased Safe Operating Area  
Figure 8. Power Derating Curve  
10  
Vcc=50V, L = 1mH  
9
IB1=1A, IB2 = -1A  
40  
20  
0
8
7
6
5
4
3
2
1
0
0
25  
50  
75  
100  
125  
150  
0
100  
200  
300  
400  
500  
600  
700  
800  
900 1000  
TC [oC], CASE TEMPERATURE  
VCE [V], COLLECTOR-EMITTER VOLTAGE  
4
www.fairchildsemi.com  
FJD5304D Rev. A  
Mechanical Dimensions  
D-PAK  
Dimensions in Millimeters  
5
www.fairchildsemi.com  
FJD5304D Rev. A  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to  
be an exhaustive list of all such trademarks.  
®
FAST  
ISOPLANAR™  
LittleFET™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
MICROWIRE™  
MSX™  
Power247™  
PowerEdge™  
PowerSaver™  
Stealth™  
ACEx™  
FASTr™  
FPS™  
SuperFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
ActiveArray™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DOME™  
®
FRFET™  
GlobalOptoisolator™  
GTO™  
PowerTrench  
®
QFET  
QS™  
®
HiSeC™  
QT Optoelectronics™  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
µSerDes™  
TinyLogic  
EcoSPARK™  
2
2
I C™  
MSXPro™  
TINYOPTO™  
TruTranslation™  
UHC™  
E CMOS™  
i-Lo™  
OCX™  
EnSigna™  
ImpliedDisconnect™  
OCXPro™  
OPTOLOGIC  
FACT™  
®
®
UltraFET  
VCX™  
FACT Quiet Series™  
®
OPTOPLANAR™  
PACMAN™  
POP™  
SILENT SWITCHER  
SMART START™  
SPM™  
Across the board. Around the world.™  
®
The Power Franchise  
Programmable Active Droop™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY  
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT  
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems which,  
(a) are intended for surgical implant into the body, or (b) support  
or sustain life, or (c) whose failure to perform when properly used  
in accordance with instructions for use provided in the labeling,  
can be reasonably expected to result in significant injury to the  
user.  
2. A critical component is any component of a life support device  
or system whose failure to perform can be reasonably expected  
to cause the failure of the life support device or system, or to  
affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Advance Information  
Product Status  
Definition  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. I13  
6
www.fairchildsemi.com  
FJD5304D Rev. A  

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