FJD5553TM [FAIRCHILD]
NPN Silicon Transistor; NPN硅晶体管型号: | FJD5553TM |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | NPN Silicon Transistor |
文件: | 总5页 (文件大小:178K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
April 2008
FJD5553
NPN Silicon Transistor
High Voltage Switch Mode Application
•
•
•
Fast Speed Switching
Wide Safe Operating Area
Suitable for Electronic Ballast Application
DPAK
Marking : J5553
1
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings * TC=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
IC
Parameter
Value
Units
Collector-Base Voltage
1050
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
400
14
V
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
3
A
ICP
6
A
IB
1
2
A
IBP
Collector Current (Pulse)
Collector Dissipation
A
PC
1.25
W
°C
°C
TJ
Junction Temperature
150
TSTG
Storage Junction Temperature Range
- 55 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Value
Units
RθJA
Thermal Resistance, Junction to Ambient
100
°C/W
* Device mounted on minimum pad size
Ordering Information
Part Number
Marking
Package
Packing Method
Remarks
FJD5553TM
J5553
D-PAK
Tape & Reel
© 2008 Fairchild Semiconductor Corporation
FJD5553 Rev. A1
www.fairchildsemi.com
1
Electrical Characteristics * TC=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
hFE
Parameter
Conditions
Min.
1050
400
14
Typ.
Max
Units
Collector-Base Breakdown Voltage
IC=500µA, IE=0
V
V
V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0
Emitter-Base Breakdown Voltage
* DC Current Gain
IE=500µA, IC=0
VCE=5V, IC=10mA
VCE=3V, IC=0.4A
IC=1A, IB=0.2A
IC=1A, IB=0.2A
VCB=10V, f=1MHz
10
30
60
0.5
1.2
VCE(sat)
VBE(sat)
Cob
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Turn On Time
0.23
45
V
V
pF
µs
µs
µs
µs
µs
µs
mJ
tON
VCC=125V, IC=0.5A
IB1=45mA, IB2=0.5A
RL=250Ω
1.0
1.2
tSTG
tF
Storage Time
Fall Time
0.3
tON
Turn On Time
VCC=250V, IC=2.5A
IB1=0.5A, IB2=1.0A
RL=100Ω
2.0
2.5
0.3
tSTG
tF
Storage Time
Fall Time
3.5
EAS
Avalanche Energy
L= 2mH
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
© 2008 Fairchild Semiconductor Corporation
FJD5553 Rev. A1
www.fairchildsemi.com
2
Typical Characteristics
1000
Ta = 75oC
Ta = 125oC
VCE = 5V
IC = 5 IB
100
10
1
Ta = 125oC
Ta = - 25oC
Ta = 75oC
Ta = 25oC
Ta = - 25oC
Ta = 25oC
100
0.01
0.1
1
10
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Saturation Voltage
1000
100
10
IC = 5 IB
tSTG
Ta = 25oC
1
Ta = - 25oC
Ta = 75oC
Ta = 125oC
tF
VCC=125V
I
B1=45mA, IB2=0.5A
0.1
0.01
0.1
1
10
0.1
1
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. Saturation Voltage
Figure 4. Resistive Load Switching
10000
1000
100
1.5
1.2
0.9
0.6
0.3
0.0
tSTG
tF
VCC=250V
I
B1=0.5A, IB2=1.0A
10
0.1
0
25
50
75
100
125
150
175
1
10
Tc[oC], CASE TEMPERATURE
IC [A], COLLECTOR CURRENT
Figure 5. Resistive Load Switching
Figure 6. Power Derating
© 2008 Fairchild Semiconductor Corporation
FJD5553 Rev. A1
www.fairchildsemi.com
3
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
© 2008 Fairchild Semiconductor Corporation
FJD5553 Rev. A1
www.fairchildsemi.com
4
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in significant injury to the user.
2.
A critical component is any component of a life support
device or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
Full Production
Not In Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
No Identification Needed
Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation
FJD5553 Rev. A1
www.fairchildsemi.com
5
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