FJD5555 [FAIRCHILD]

NPN Silicon Transistor; NPN硅晶体管
FJD5555
型号: FJD5555
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

NPN Silicon Transistor
NPN硅晶体管

晶体 晶体管
文件: 总5页 (文件大小:179K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
April 2008  
FJD5555  
NPN Silicon Transistor  
High Voltage Switch Mode Application  
Fast Speed Switching  
Wide Safe Operating Area  
Suitable for Electronic Ballast Application  
DPAK  
1
Marking : J5555  
1. Base 2. Collector 3. Emitter  
Absolute Maximum Ratings * TC=25°C unless otherwise noted  
Symbol  
BVCBO  
BVCEO  
BVEBO  
IC  
Parameter  
Value  
Units  
Collector-Base Voltage  
1050  
V
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
400  
14  
V
Collector Current (DC)  
Collector Current (Pulse)  
Base Current (DC)  
5
A
ICP  
10  
A
IB  
2
4
A
IBP  
Collector Current (Pulse)  
Collector Dissipation.  
A
PC  
1.34  
W
°C  
°C  
TJ  
Junction Temperature  
150  
TSTG  
Storage Junction Temperature Range  
- 55 ~ 150  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics Ta=25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
RθJA  
Thermal Resistance, Junction to Ambient  
95  
°C/W  
* Device mounted on minimum pad size  
Package Marking and Ordering Information  
Part Number  
Marking  
Package  
Packing Method  
Remarks  
FJD5555TM  
J5555  
D-PAK  
Tape & Reel  
© 2008 Fairchild Semiconductor Corporation  
FJD5555 Rev. A2  
www.fairchildsemi.com  
1
Electrical Characteristics * TC=25°C unless otherwise noted  
Symbol  
BVCBO  
BVCEO  
BVEBO  
hFE  
Parameter  
Conditions  
Min.  
1050  
400  
14  
Typ.  
Max  
Units  
Collector-Base Breakdown Voltage  
IC=500µA, IE=0  
V
V
V
Collector-Emitter Breakdown Voltage IC=5mA, IB=0  
Emitter-Base Breakdown Voltage  
DC Current Gain  
IE=500µA, IC=0  
VCE=5V, IC=10mA  
VCE=3V, IC=0.8A  
IC=1A, IB=0.2A  
10  
20  
40  
0.5  
1.5  
1.2  
VCE(sat)  
Collector-Emitter Saturation Voltage  
0.17  
45  
V
V
IC=3.5A, IB=1.0A  
IC=3.5A, IB=1.0A  
VCB=10V, f=1MHz  
VBE(sat)  
Cob  
tON  
Base-Emitter Saturation Voltage  
Output Capacitance  
Turn On Time  
V
pF  
µs  
µs  
µs  
µs  
µs  
µs  
mJ  
VCC=125V, IC=0.5A  
IB1=45mA, IB2=0.5A  
RL=250Ω  
1.0  
1.2  
tSTG  
tF  
Storage Time  
Fall Time  
0.3  
tON  
Turn On Time  
VCC=250V, IC=2.5A  
IB1=0.5A, IB2=1.0A  
RL=100Ω  
2.0  
2.5  
0.3  
tSTG  
tF  
Storage Time  
Fall Time  
6
EAS  
Avalanche Energy  
L= 2mH  
* Pulse Test: Pulse Width300µs, Duty Cycle2%  
© 2008 Fairchild Semiconductor Corporation  
FJD5555 Rev. A2  
www.fairchildsemi.com  
2
Typical Characteristics  
1000  
Ta = 125oC  
Ta = 75oC  
VCE = 5V  
IC = 5 IB  
100  
Ta = 125oC  
Ta = 75oC  
Ta = 25oC  
Ta = - 25oC  
Ta = - 25oC  
Ta = 25oC  
10  
100  
1
0.01  
0.01  
0.1  
1
10  
0.1  
1
10  
IC [A], COLLECTOR CURRENT  
IC [A], COLLECTOR CURRENT  
Figure 1. DC Current Gain  
Figure 2. Saturation Voltage  
1000  
100  
10  
IC = 5 IB  
tSTG  
Ta = 25oC  
1
Ta = - 25oC  
Ta = 125oC  
Ta = 75oC  
tF  
VCC=125V  
I
B1=45mA, IB2=0.5A  
0.1  
0.01  
0.1  
1
10  
0.1  
1
IC [A], COLLECTOR CURRENT  
IC [A], COLLECTOR CURRENT  
Figure 3. Saturation Voltage  
Figure 4. Resistive Load Switching  
10000  
1000  
100  
1.5  
tSTG  
1.2  
0.9  
0.6  
0.3  
0.0  
tF  
VCC=250V  
I
B1=0.5A, IB2=1.0A  
0
25  
50  
75  
100  
125  
150  
175  
10  
0.1  
Tc[oC], CASE TEMPERATURE  
1
10  
IC [A], COLLECTOR CURRENT  
Figure 5. Resistive Load Switching  
Figure 6. Power Derating  
© 2008 Fairchild Semiconductor Corporation  
FJD5555 Rev. A2  
www.fairchildsemi.com  
3
Mechanical Dimensions  
D-PAK  
Dimensions in Millimeters  
© 2008 Fairchild Semiconductor Corporation  
FJD5555 Rev. A2  
www.fairchildsemi.com  
4
TRADEMARKS  
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and  
is not intended to be an exhaustive list of all such trademarks.  
ACEx®  
Green FPS™  
Green FPS™ e-Series™  
GTO™  
i-Lo™  
IntelliMAX™  
ISOPLANAR™  
MegaBuck™  
MICROCOUPLER™  
MicroFET™  
Power247®  
SuperSOT™-8  
SyncFET™  
Build it Now™  
CorePLUS™  
CROSSVOLT™  
CTL™  
Current Transfer Logic™  
EcoSPARK®  
POWEREDGE®  
Power-SPM™  
PowerTrench®  
Programmable Active Droop™  
QFET®  
The Power Franchise®  
TinyBoost™  
TinyBuck™  
TinyLogic®  
TINYOPTO™  
TinyPower™  
TinyPWM™  
TinyWire™  
µSerDes™  
UHC®  
QS™  
QT Optoelectronics™  
Quiet Series™  
RapidConfigure™  
SMART START™  
SPM®  
STEALTH™  
SuperFET™  
SuperSOT™-3  
SuperSOT™-6  
Fairchild®  
Fairchild Semiconductor®  
FACT Quiet Series™  
FACT®  
MicroPak™  
MillerDrive™  
Motion-SPM™  
OPTOLOGIC®  
FAST®  
FastvCore™  
FPS™  
OPTOPLANAR®  
®
UniFET™  
VCX™  
FRFET®  
PDP-SPM™  
Power220®  
Global Power ResourceSM  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS  
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF  
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE  
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF  
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE  
PRODUCTS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body, or  
(b) support or sustain life, and (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to result  
in significant injury to the user.  
2.  
A critical component is any component of a life support  
device or system whose failure to perform can be reasonably  
expected to cause the failure of the life support device or  
system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
This datasheet contains the design specifications for product development.  
Specifications may change in any manner without notice.  
Advance Information  
Formative or In Design  
This datasheet contains preliminary data; supplementary data will be pub-  
lished at a later date. Fairchild Semiconductor reserves the right to make  
changes at any time without notice to improve design.  
Preliminary  
First Production  
Full Production  
Not In Production  
This datasheet contains final specifications. Fairchild Semiconductor reserves  
the right to make changes at any time without notice to improve design.  
No Identification Needed  
Obsolete  
This datasheet contains specifications on a product that has been discontin-  
ued by Fairchild semiconductor. The datasheet is printed for reference infor-  
mation only.  
Rev. I31  
© 2008 Fairchild Semiconductor Corporation  
FJD5555 Rev. A2  
www.fairchildsemi.com  
5

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