FJD5304D_10 [FAIRCHILD]
High Voltage Fast Switching Transistor; 高压快速开关晶体管
| 型号： | FJD5304D_10 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | High Voltage Fast Switching Transistor |
| 文件： | 总6页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2010
FJD5304D
High Voltage Fast Switching Transistor
Features
• Built-in Free Wheeling Diode
• Wide Safe Operating Area
• Small Variance in Storage Time
• Suitable for Electronic Ballast Application
Equivalent Circuit
C
B
D-PAK
1. Base 2. Collector 3. Emitter
1
E
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Units
700
400
12
4
8
2
4
30
1.25
V
V
V
A
A
A
A
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current (DC)
ICP
IB
IBP
PC
* Base Current (Pulse)
Collector Dissipation
T = 25°C
W
W
Tac = 25°C
TJ
TSTG
Junction Temperature
Storage Temperature
150
-55 to 150
°C
°C
* Pulse Test: PW = 300µs, Duty Cycle = 2% Pulsed
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
Rθja
Thermal Resistance Junction-Ambient **
99
°C/W
** Device mounted on minimum pad size.
© 2010 Fairchild Semiconductor Corporation
FJD5304D Rev. A1
www.fairchildsemi.com
1
Package Marking and Ordering Information
Device Marking
J5304D
Device
FJD5304DTM
Package
D-PAK
Reel Size
13” Dia
Tape Width
Quantity
2500
-
J5304D
FJD5304DTF
D-PAK
13” Dia
-
2000
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol Parameter Conditions
BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0
BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0
Min. Typ. Max. Units
700
400
12
V
V
V
BVEBO Emitter-Base Breakdown Voltage
IE = 1mA, IC = 0
VCB = 700V, IE = 0
VCB = 400V, IB = 0
VEB = 12V, IC = 0
ICES
ICEO
IEBO
hFE
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
100
250
1
µA
µA
mA
VCE = 5V, IC = 10mA
VCE = 5V, IC = 2.0A
10
8
40
VCE(sat) Collector-Emitter Saturation Voltage IC = 0.5A, IB = 0.1A
IC = 1.0A, IB = 0.2A
0.7
1.0
1.5
1.1
1.2
1.3
V
V
V
V
V
IC = 2.5A, IB = 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC = 0.5A, IB = 0.1A
IC = 1.0A, IB = 0.2A
IC = 2.5A, IB = 0.5A
V
tSTG
tF
tSTG
tF
Storage Time
Fall Time
Storage Time
Fall Time
0.6
0.1
µs
µs
µs
µs
V
VCLAMP=200V, IC=2.0A,
IB1=0.4A, VBE(off)=-5V, L=200µH
2.9
2.5
VCC=250V, IC=2.0A,
IB1=0.4A, IB2=-0.4A, TP=30µs
IF = 2A
0.2
VF
Diode Forward Voltage
© 2010 Fairchild Semiconductor Corporation
FJD5304D Rev. A1
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain
4.0
100
10
1
IB=300mA
3.5
TC=125oC
3.0
IB=150mA
2.5
TC= - 25oC
TC=25oC
IB=100mA
2.0
IB=50mA
1.5
1.0
0.5
0.0
0
2
4
6
8
10
12
0.01
0.1
1
10
VCE [V]. COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
10
10
IC = 5 IB
IC = 5 IB
TC=125oC
1
TC=25oC
TC= - 25oC
1
TC= - 25oC
0.1
TC=25oC
TC=125oC
0.01
0.1
0.01
0.1
1
10
0.01
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 5. Resistive Load Switching Time
Figure 6. Forward Biased Safe Operating Area
10
100
tSTG
Pulse IC_MAX
10
1µs
1
10µs
DC IC_MAX
1
1ms
tF
0.1
0.1
TC = 25oC
Single Pulse
VCC=250V
IC= 5 IB1= - 5 IB2
0.01
0.01
0.1
1
10
1
10
100
1000
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
© 2010 Fairchild Semiconductor Corporation
FJD5304D Rev. A1
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
Figure 7. Reverse Biased Safe Operating Area
Figure 8. Power Derating Curve
10
Vcc=50V, L = 1mH
9
I
B1=1A, IB2 = -1A
8
7
6
5
4
3
2
1
0
40
20
0
0
100
200
300
400
500
600
700
800
900 1000
0
25
50
75
100
125
150
TC [oC], CASE TEMPERATURE
VCE [V], COLLECTOR-EMITTER VOLTAGE
© 2010 Fairchild Semiconductor Corporation
FJD5304D Rev. A1
www.fairchildsemi.com
4
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
© 2010 Fairchild Semiconductor Corporation
FJD5304D Rev. A1
www.fairchildsemi.com
5
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Datasheet Identification Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
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Advance Information
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Full Production
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Obsolete
Rev. I49
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