FDS6679Z_NL [FAIRCHILD]
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| 型号： | FDS6679Z_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 暂无描述 晶体 小信号场效应晶体管 开关 光电二极管 PC |
| 文件： | 总5页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2001
FDS6679
30 Volt P-Channel PowerTrenchÒ MOSFET
General Description
Features
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
· –13 A, –30 V. RDS(ON) = 9 mW @ VGS = –10 V
RDS(ON) = 13 mW @ VGS = – 4.5 V
· Extended VGSS range (±25V) for battery applications
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
· High performance trench technology for extremely
low RDS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
· High power and current handling capability
D
D
5
6
7
8
4
3
2
1
D
D
G
S
S
SO-8
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
–30
VGSS
ID
Gate-Source Voltage
V
A
±25
–13
Drain Current – Continuous
– Pulsed
(Note 1a)
–50
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
2.5
W
1.2
(Note 1c)
1.0
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
RqJA
°C/W
°C/W
RqJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6679
FDS6679
13’’
12mm
2500 units
FDS6679 Rev C (W)
Ó2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 mA
–30
V
Breakdown Voltage Temperature
Coefficient
DBVDSS
DTJ
ID = –250 mA, Referenced to 25°C
–23
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = –24 V, VGS = 0 V
VGS = –25 V, VDS = 0 V
VGS = –25 V, VDS = 0 V
–1
mA
nA
nA
IGSSF
IGSSR
100
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
VDS = VGS, ID = –250 mA
–1
–1.6
5
–3
V
DVGS(th)
DTJ
RDS(on)
ID = –250 mA, Referenced to 25°C
mV/°C
mW
Static Drain–Source
On–Resistance
VGS = –10 V,
ID = –13 A
7.3
10
9.5
9
13
13
VGS = –4.5 V, ID = –11 A
VGS=–10 V, ID =–13 A, TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = –10 V,
VDS = –5 V,
VDS = –5 V
ID = –13 A
–50
A
S
Forward Transconductance
44
Dynamic Characteristics
C
Input Capacitance
3939
972
pF
pF
pF
iss
VDS = –15 V,
f = 1.0 MHz
V GS = 0 V,
Coss
Output Capacitance
C
rss
Reverse Transfer Capacitance
498
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
VDD = –15 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 W
19
10
34
20
ns
ns
110
65
176
104
100
ns
ns
Qg
VDS = –15 V,
VGS = –10 V
ID = –13 A,
71
nC
nC
nC
Qgs
Qgd
12
15
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–2.1
–1.2
A
V
Drain–Source Diode Forward
VSD
VGS = 0 V, IS = –2.1 A (Note 2)
–0.7
Voltage
Notes:
1. RqJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RqJCis guaranteed by design while RqCAis determined by the user's board design.
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
2
2
1in pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
FDS6679 Rev C(W)
Typical Characteristics
50
3
2.6
2.2
1.8
1.4
1
VGS = -10V
-4.0V
-6.0V
VGS = -3.0V
40
-3.5V
-4.5V
30
-3.0V
-3.5V
20
10
0
-4.0V
-4.5V
-5.0V
-6.0V
-10V
-2.5V
0.6
0
0.5
1
1.5
2
0
10
20
30
40
50
-VDS , DRAIN TO SOURCE VOLTAGE (V)
-ID, DIRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.04
ID = -13A
ID = -7.0A
VGS = -10V
1.4
0.03
0.02
0.01
0
TA = 125oC
1.2
1
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
175
2
2.5
3
3.5
4
4.5
5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
40
30
20
10
0
100
VGS = 0V
VDS = -5.0V
10
1
TA = 125oC
25oC
0.1
-55oC
TA = -125oC
0.01
0.001
0.0001
25oC
-55oC
1.5
2
2.5
3
3.5
0
0.2
-VSD
0.4
0.6
0.8
1
1.2
-VGS, GATE TO SOURCE VOLTAGE (V)
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6679 Rev C(W)
Typical Characteristics
6000
5000
4000
3000
2000
1000
0
10
VDS = -5V
ID = -13A
-10V
f = 1 MHz
VGS = 0 V
8
6
4
2
0
-15V
CISS
COSS
CRSS
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
100ms
SINGLE PULSE
RqJA = 125°C/W
TA = 25°C
1ms
10ms
RDS(ON) LIMIT
100ms
1s
10s
1
DC
VGS = -10V
SINGLE PULSE
0.1
0.01
Rq = 125oC/W
JA
TA = 25oC
0.1
1
10
100
0.001
0.01
0.1
1
10
100
-VDS , DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RqJA(t) = r(t) + Rq
JA
0.2
RqJA = 125oC/W
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6679 Rev C(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Stealth™
UltraFET
VCX™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H2
相关型号：
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