FDS6680AF011 [FAIRCHILD]
Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8;
| 型号： | FDS6680AF011 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2001
FDS6680A
Single N-Channel, Logic Level, PowerTrench MOSFET
GeneralDescription
Features
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
12.5 A, 30 V. RDS(ON) = 0.0095 W @ VGS = 10 V
DS(ON) = 0.013 W @ VGS = 4.5 V.
R
Fast switching speed.
Low gate charge.
High performance trench technology for
extremely low RDS(ON)
.
High power and current handling capability.
SuperSOTTM-6
SO-8
SOT-223
SuperSOTTM-8
SOIC-16
SOT-23
5
6
4
3
2
1
D
D
D
D
7
8
G
S
1
S
pin
SO-8
S
Absolute Maximum Ratings TA = 25oC unless other wise noted
Symbol
VDSS
VGSS
ID
Parameter
FDS6680A
Units
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
30
±20
V
(Note 1a)
(Note 1a)
12.5
50
A
PD
Power Dissipation for Single Operation
2.5
W
(Note 1b)
(Note 1c)
1.2
1
TJ,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
RqJA
RqJC
Thermal Resistance, Junction-to-Ambient (Note 1a)
Thermal Resistance, Junction-to-Case
50
25
°C/W
°C/W
(Note 1)
FDS6680A Rev.E
© 2001 Fairchild Semiconductor Corporation
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol
Parameter
Conditions
Min Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, I D = 250 µA
30
V
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25 oC
33
mV / oC
DBVDSS/DTJ
IDSS
VDS = 24 V, VGS = 0 V
1
µA
µA
nA
nA
TJ = 55°C
10
IGSSF
IGSSR
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
VGS = 20 V, VDS = 0 V
VGS = -20 V, VDS= 0 V
100
-100
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage Temp. Coefficient
ID = 250 µA, Referenced to 25 oC
VDS = VGS, ID = 250 µA
-4.5
1.6
1.3
mV /oC
V
DVGS(th)/DTJ
VGS(th)
Gate Threshold Voltage
1
2
TJ =125°C
0.8
2.4
RDS(ON)
Static Drain-Source On-Resistance
VGS = 10 V, I D = 12.5 A
0.008 0.0095
0.012 0.016
W
TJ =125°C
VGS = 4.5 V, I D = 10.5 A
VGS = 10 V, VDS = 5 V
VDS = 15 V, I D= 12.5 A
0.0105 0.013
ID(ON)
gFS
On-State Drain Current
25
A
S
Forward Transconductance
35
DYNAMIC CHARACTERISTICS
C
Input Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
2180
500
pF
pF
pF
iss
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
255
SWITCHING CHARACTERISTICS (Note 2)
tD(on)
tr
tD(off)
tf
Turn - On Delay Time
Turn - On Rise Time
VDS= 10 V, I D= 1 A
13
14
24
26
ns
ns
VGS = 10 V , RGEN = 6 W
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
43
15
23
7
70
27
33
ns
ns
Qg
Qgs
Qgd
VDS = 15 V, I D = 12.5 A,
VGS= 5 V
nC
nC
nC
11
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
2.1
1.2
A
V
VSD
VGS = 0 V, IS = 2.1 A (Note 2)
0.72
Notes:
1. Rq is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. Rq is
JA
JC
guaranteed by design while RqCA is determined by the user's board design.
b. 105OC/W on a 0.04 in2
pad of 2oz copper.
c. 125OC/W on a 0.006 in2 pad
of 2oz copper.
a. 50OC/W on a 1 in2 pad
of 2oz copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDS6680A Rev.E
Typical Electrical Characteristics
3
2.5
2
50
VGS = 10V
4.5V
4.0V
V GS= 3.0V
6.0V
40
30
20
10
0
3.5V
3.5 V
3.0V
4.0 V
1.5
1
4.5 V
5.5V
7.0V
2.5V
10V
0
0.5
V
1
1.5
2
0
10
20
30
40
50
, DRAIN-SOURCE VOLTAGE (V)
DS
I
, DRAIN CURRENT (A)
D
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
0.04
0.03
0.02
0.01
0
ID = 12.5A
ID = 6.3A
VGS= 10V
1.6
1.4
1.2
1
125°C
25°C
0.8
0.6
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
T
, JUNCTION TEMPERATURE (°C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
J
Figure 4 . On Resistance Variation with
Gate-to-Source Voltage.
Figure 3. On-Resistance Variation with
Temperature.
50
40
VDS =5.0V
T
= -55°C
VGS= 0V
J
10
25°C
125°C
T = 125°C
40
30
20
10
0
J
1
25°C
-55°C
0.1
0.01
0.001
0.0001
1
2
3
4
0
0.2
V
0.4
0.6
0.8
1
1.2
V
, GATE TO SOURCE VOLTAGE (V)
GS
, BODY DIODE FORWARD VOLTAGE (V)
SD
Figure 5 . Transfer Characteristics.
Figure 6 . Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6680A Rev.E
Typical Electrical And Thermal Characteristics
4000
2000
1000
10
VDS = 5V
I D = 12.5A
C
10V
iss
8
15V
6
4
2
0
C
oss
400
200
100
C
rss
f = 1 MHz
VGS = 0 V
0.1
0.2
0.5
, DRAIN TO SOURCE VOLTAGE (V)
DS
1
2
5
10
30
0
10
20
30
40
50
60
V
Q
, GATE CHARGE (nC)
g
Figure 8. Capacitance Characteristics.
Figure 7. Gate Charge Characteristics.
50
40
30
20
10
0
100
SINGLE PULSE
RqJA =125°C/W
TA = 25°C
30
10
3
1
VGS =10V
SINGLE PULSE
RqJA = 125°C/W
TA= 25°C
0.1
0.01
0.05 0.1
0.001
0.01
0.1
1
10
100 300
0.5
1
2
5
10
30 50
SINGLE PULSE TIME (SEC)
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power
Dissipation.
1
D = 0.5
0.5
0.2
0.1
0.2
0.1
R
(t) = r(t) * R
JA
JA
q
q
R
= 125°C/W
JA
q
0.05
0.05
0.02
0.01
P(pk)
0.02
0.01
t1
t2
Single Pulse
0.005
T - T = P * R
(t)
JA
q
J
A
0.002
0.001
Duty Cycle, D = t1 /t
2
0.0001
0.001
0.01
0.1
, TIME (sec)
1
10
100
300
t
1
Figure 11. Transient Thermal Response Curve .
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6680A Rev.E
SOIC-8 Tape and Reel Data
SOIC(8lds)Packaging
Configuration: Figure 1.0
ATTENTION
OBSERVE PRECAUTIONS
FOR HANDLING
ELECTROSTATIC
SENSITIVE
Packaging Description:
DEVICES
SOIC-8 parts are shipped in tape. The carrier tape is
Embossed ESD Marking
made from a dissipative (carbon filled) polycarbonate
N
EC
R
IO
NT
ER
ONS
TE
O
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13” or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7” or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
UTI
A
T
A
VE
P
BS
NG
ANDLI
H
C
FOR
IC
AT
ST
O
TR
ELE
VE
I
IT
S
Antistatic Cover Tape
EN
S
ES
C
DEVI
These full reels are individually barcode labeled and
placed inside
a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
F852
NDS
9959
Customized
Label
F
F
F
F
Pin1
SOIC (8lds) Packaging Information
Standard
L86Z
Packaging Option
Packaging type
F011
D84Z
(no flow code)
SOIC-8 Unit Orientation
TNR
Rail/Tube
TNR
4,000
TNR
500
Qtyper Reel/Tube/Bag
Reel Size
2,500
95
-
Barcode Label
13” Dia
13” Dia
7” Dia
Box Dimension(mm)
Maxqty per Box
355x333x40 530x130x83 355x333x40 193x183x80
5,000
0.0774
0.6060
30,000
0.0774
-
8,000
0.0774
0.9696
2,000
0.0774
0.1182
Weight per unit(gm)
Weight per Reel (kg)
Note/Comments
Barcode
Label
Barcode
Label
355mm x 333mm x 40mm
Intermediate container for 13” reel option
Barcode Label sample
LOT: CBVK741B019
FSID: FDS9953A
QTY: 2500
SPEC:
193mm x 183mm x 80mm
Pizza Box for Standard Option
SOIC(8lds)Tape Leader and Trailer
Configuration: Figure 2.0
D/C1: Z9842AB QTY1:
SPEC REV:
CPN:
D/C2:
QTY2:
FAIRCHILD SEMICONDUCTOR CORPORATION
(F63T NR)
Carrier Tape
Cover Tape
Components
Tr ailer Ta pe
Leader Tape
640mm minimum or
80 empty pockets
1680mm minimum or
210 empty pockets
June 2001, Revꢀ C1
©2001 Fairchild Semiconductor Corporation
SOIC-8 Tape and Reel Data, continued
SOIC(8lds) Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
E2
F
W
K0
Wc
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
Pkg type
0.450
+/-
0.150
(8lds)
SOIC
(12mm)
5.30
+/-0.10
6.50
+/-0.10
12.0
+/-0.3
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
10.25
min
5.50
+/-0.05
8.0
+/-0.1
4.0
+/-0.1
2.1
+/-0.10
9.2
+/-0.3
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
SOIC(8lds) Reel Configuration: Figure 4.0
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7"Diameter Option
B Min
Dim C
See detail AA
Dim D
min
W3
13" Diameter Option
W2 max Measured at Hub
DETAIL AA
Dim W2
Dimensions are in inches and millimeters
Reel
Tape Size
12mm
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W3 (LSL-USL)
Option
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
7" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
7.00
178
0.488 +0.078/-0.000
12.4 +2/0
0.724
18.4
0.469 – 0.606
11.9 – 15.4
12mm
13" Dia
January 2001, Revꢀ C
SOIC-8 Package Dimensions
SOIC-8 (FS PKG Code S1)
1 : 1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0774
9
September 1998, Rev. A
©2000 Fairchild Semiconductor International
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
相关型号：
FDS6680D84Z
Small Signal Field-Effect Transistor, 11.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
FDS6680L86Z
Small Signal Field-Effect Transistor, 11.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
FDS6680_NL
Small Signal Field-Effect Transistor, 11.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明