FDS6680A [FAIRCHILD]
Single N-Channel, Logic Level, PowerTrench MOSFET; 单N沟道逻辑电平的PowerTrench MOSFET型号: | FDS6680A |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Single N-Channel, Logic Level, PowerTrench MOSFET |
文件: | 总5页 (文件大小:103K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
November 2004
FDS6680A
Single N-Channel, Logic Level, PowerTrench® MOSFET
General Description
Features
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor’s advanced Power
Trench process that has been especially tailored to
minimize the on-state resistance and yet maintain
superior switching performance.
• 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V
RDS(ON) = 13 mΩ @ VGS = 4.5 V
• Ultra-low gate charge
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
D
5
6
7
8
4
3
2
1
D
D
D
G
SO-8
S
S
S
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
Parameter
Drain-Source Voltage
Ratings
Units
V
30
VGSS
Gate-Source Voltage
±20
ID
Drain Current – Continuous
– Pulsed
(Note 1a)
12.5
A
50
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
2.5
PD
W
1.2
1.0
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
50
25
RθJA
°C/W
Thermal Resistance, Junction-to-Ambient
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6680A
FDS6680A
13’’
12mm
2500 units
FDS6680A Rev F1(W)
©2004 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V,
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
ID = 250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
25
mV/°C
Zero Gate Voltage Drain Current
1
µA
µA
nA
10
VDS = 24 V, VGS = 0 V, TJ=55°C
VGS = ±20 V, VDS = 0 V
IGSS
Gate–Body Leakage
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
2
3
V
VDS = VGS
,
ID = 250 µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
–4.9
ID = 250 µA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 4.5 V,
VGS = 10 V, ID = 12.5 A, TJ=125°C
ID = 12.5 A
ID = 10.5 A
7.8
9.9
11.0
9.5
13
15
mΩ
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 15 V,
VDS = 5 V
25
A
S
Forward Transconductance
ID = 12.5 A
64
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
1620
380
160
1.3
pF
pF
pF
Ω
V
DS = 15 V,
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
10
5
19
10
43
27
23
ns
ns
V
DD = 15 V,
ID = 1 A,
RGEN = 6 Ω
VGS = 10 V,
27
15
16
5
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = 15 V,
VGS = 5 V
ID = 12.5 A,
5.8
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.1
1.2
A
V
Drain–Source Diode Forward
VGS = 0 V, IS = 2.1 A
Voltage
VSD
(Note 2)
0.73
trr
Diode Reverse Recovery Time
IF = 12.5 A, diF/dt = 100 A/µs
28
18
ns
Qrr
Diode Reverse Recovery Charge
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6680A Rev F1(W)
Typical Characteristics
50
2.2
2
VGS = 10V
6.0V
4.0V
40
30
20
10
0
4.5V
VGS = 3.5V
3.5V
1.8
1.6
1.4
1.2
1
4.0V
4.5V
5.0V
6.0V
10V
40
3.0V
0.8
0
0.5
1
1.5
2
0
10
20
30
50
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.03
ID = 12.5A
ID = 6.2A
VGS = 10V
0.025
0.02
TA = 125oC
0.015
0.01
0.8
0.6
TA = 25oC
0.005
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
BFigure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
50
VGS = 0V
VDS = 5V
10
1
40
30
20
10
0
TA = 125oC
25oC
TA = 125oC
0.1
-55oC
-55oC
0.01
0.001
0.0001
25oC
0
0.2
0.4
0.6
0.8
1
1.2
1.5
2
2.5
3
3.5
4
V
SD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6680A Rev F1(W)
Typical Characteristics
10
2400
1800
1200
600
0
f = 1 MHz
GS = 0 V
ID = 12.5A
V
8
V
DS = 10V
15V
6
4
2
0
Ciss
20V
Coss
Crss
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
10
50
40
30
20
10
0
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
100µs
RDS(ON) LIMIT
1ms
10ms
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
0.1
0.01
T
A = 25oC
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 125oC/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
t2
0.01
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6680A Rev F1(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I13
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