FDPF44N25T [FAIRCHILD]
250V N-Channel MOSFET; 250V N沟道MOSFET
| 型号： | FDPF44N25T |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 250V N-Channel MOSFET |
| 文件： | 总7页 (文件大小：884K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
UniFET
FDPF44N25
250V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
18A, 250V, RDS(on) = 0.069Ω @VGS = 10 V
Low gate charge ( typical 47 nC)
Low Crss ( typical 60 pF)
Fast switching
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
100% avalanche tested
Improved dv/dt capability
D
G
TO-220F
FDPF Series
G D
S
S
Absolute Maximum Ratings
Symbol
Parameter
FDPF44N25
Unit
VDSS
Drain-Source Voltage
Drain Current
250
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
18
10.8
A
A
(Note 1)
(Note 2)
IDM
Drain Current
- Pulsed
72
±30
2055
18
A
V
VGSS
EAS
IAR
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
(Note 1)
(Note 1)
(Note 3)
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
5.6
mJ
V/ns
4.5
Power Dissipation
(TC = 25°C)
56
W
- Derate above 25°C
0.45
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
°C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
Thermal Characteristics
Symbol
Parameter
Min.
Max.
2.23
Unit
°C/W
°C/W
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
--
--
62.5
©2005 Fairchild Semiconductor Corporation
FDPF44N25 Rev A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDPF44N25
FDPF44N25T
TO-220F
--
--
50
Potting Type
FDPF44N25
FDPF44N25
TO-220F
--
--
50
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min. Typ. Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
250
--
--
--
--
V
∆BVDSS
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
0.25
V/°C
/
∆TJ
IDSS
Zero Gate Voltage Drain Current
VDS = 250V, VGS = 0V
VDS = 200V, TC = 125°C
--
--
--
--
1
10
µA
µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250µA
VGS = 10V, ID = 9A
VDS = 40V, ID = 9A
3.0
--
--
0.058
32
5.0
0.069
--
V
Ω
S
Static Drain-Source
On-Resistance
(Note 4)
gFS
Forward Transconductance
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
2210
450
60
2870
585
90
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 125V, ID = 44A
RG = 25Ω
--
--
--
--
--
--
--
53
402
85
117
814
179
234
61
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4, 5)
(Note 4, 5)
112
47
ns
Qg
VDS = 200V, ID = 44A
VGS = 10V
nC
nC
nC
Qgs
Qgd
18
--
24
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
18
72
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 18A
--
V
VGS = 0V, IS = 44A
195
1.8
ns
µC
dIF/dt =100A/µs
(Note 4)
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 10.1mH, I = 18A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 18A, di/dt ≤ 200A/µs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
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FDPF44N25 Rev A
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
102
101
100
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
102
Bottom : 5.5 V
150oC
25oC
101
-55oC
∝ Notes :
∝ Notes :
1. VDS = 40V
2. 250レs Pulse Test
1. 250レs Pulse Test
2. TC = 25∩
100
10-1
100
101
2
4
6
8
10
12
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.10
0.08
102
VGS = 10V
101
0.06
150∩
25∩
VGS = 20V
∝ Notes :
0.04
1. VGS = 0V
∝ Note : T = 25∩
2. 250レs Pulse Test
J
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
25
50
75
100
125
150
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
10
8
6000
C
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
Crss = Cgd
VDS = 50V
VDS = 125V
VDS = 200V
5000
4000
3000
2000
1000
0
Coss
C
6
iss
4
∝ Note ;
1. VGS = 0 V
2. f = 1 MHz
C
2
rss
∝ Note : ID = 44A
0
10-1
100
101
0
10
20
30
40
50
60
70
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
3
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FDPF44N25 Rev A
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
∝ Notes :
1. VGS = 0 V
0.9
∝ Notes :
1. VGS = 10 V
2. ID = 250 レA
0.5
2. ID = 9 A
0.8
-100
0.0
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
T, Junction Temperature [oC]
TJ, Junction Temperature [oC]
J
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
20
10
0
102
10 µs
100 µs
1 ms
101
10 ms
100 ms
Operation in This Area
is Limited by R DS(on)
DC
100
∝ Notes :
-1
10
1. TC = 25 o
C
2. T = 150 o
C
J
3. Single Pulse
-2
10
100
101
102
25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [∩ ]
Figure 11. Transient Thermal Response Curve
1 0 0
1 0 -1
1 0 -2
D = 0 .5
0 .2
0 .1
∝
N o te s
:
1 . Z ヨ (t)
=
2 .2 3
2 . D u ty F a c to r, D = t1 /t2
3 . T JM T C P D M Z ヨ (t)
∩ /W M a x .
JC
0 .0 5
-
=
*
J C
0 .0 2
0 .0 1
PDM
t1
t2
s in g le p u ls e
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
1 0 0
1 0 1
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
4
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FDPF44N25 Rev A
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5
www.fairchildsemi.com
FDPF44N25 Rev A
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
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FDPF44N25 Rev A
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
7
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FDPF44N25 Rev A
相关型号：
FDPF51N25YDTU
N-Channel UniFETTM MOSFET 250V, 51A, 60mΩ, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, Y FORMED LEAD, 800/RAIL
FAIRCHILD
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