FDN304PS62Z [FAIRCHILD]
Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3;型号: | FDN304PS62Z |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 开关 光电二极管 晶体管 |
文件: | 总5页 (文件大小:212K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
June 2000
PRELIMINARY
FDN304P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
• –2.4 A, –20 V. RDS(ON) = 0.052 Ω @ VGS = –4.5 V
RDS(ON) = 0.070 Ω @ VGS = –2.5 V
DS(ON) = 0.100 Ω @ VGS = –1.8 V
R
• Fast switching speed
Applications
• High performance trench technology for extremely
low RDS(ON)
• Battery management
• Load switch
• SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
• Battery protection
D
D
S
S
G
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
V
A
8
(Note 1a)
–2.4
–10
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
0.5
W
0.46
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
RθJA
RθJC
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.304
FDN304P
7’’
8mm
3000 units
FDN304P Rev B(W)
2000 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
–20
V
V
GS = 0 V, ID = –250 µA
Breakdown Voltage Temperature
–13
∆BVDSS
===∆TJ
IDSS
IGSSF
IGSSR
ID = –250 µA,Referenced to 25°C
mV/°C
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = –16 V, VGS = 0 V
–1
100
–100
µA
nA
nA
VGS = 8 V,
VGS = –8 V
VDS = 0 V
VDS = 0 V
On Characteristics
(Note 2)
Gate Threshold Voltage
VGS(th)
–0.4
–10
–0.8
3
–1.5
V
V
DS = VGS, ID = –250 µA
Gate Threshold Voltage
∆VGS(th)
===∆TJ
ID = –250 µA,Referenced to 25°C
mV/°C
Temperature Coefficient
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
VGS = –2.5 V,
VGS = –1.8V,
VGS = –4.5 V,
VDS = –5 V,
ID = –2.4 A
ID = –2.0 A
ID = –1.8 A
VDS = –5 V
ID = –1.25 A
0.036 0.052
0.047 0.070
0.065 0.100
Ω
ID(on)
gFS
On–State Drain Current
Forward Transconductance
A
S
12
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1312
240
106
pF
pF
pF
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
15
15
40
25
12
2
27
27
64
40
20
ns
ns
ns
VDD = –10 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6 Ω
ns
Qg
Qgs
Qgd
nC
nC
nC
V
DS = –10 V,
ID = –2.4 A,
VGS = –4.5 V
2
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.42
–1.2
A
V
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = –0.42
(Note 2)
–0.6
Voltage
Notes:
1.
RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
b) 270°C/W when mounted on a
minimum pad.
a) 250°C/W when mounted on a
2
0.02 in pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤=300 µs, Duty Cycle ≤=2.0%
FDN304P Rev B(W)
Typical Characteristics
15
4
3.5
3
VGS = -4.5V
-3.0V
-2.5V
12
9
-2.0V
VGS = -1.5V
2.5
2
-1.8V
-1.8V
6
-2.0V
1.5
1
-2.5V
9
-3.0V
-1.5V
3
-4.5V
0.5
0
0
3
6
12
15
0
0.5
1
1.5
2
2.5
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.14
0.12
0.1
1.5
1.4
ID = -1.2 A
ID = -2.4A
GS = -4.5V
V
1.3
1.2
1.1
1
0.08
0.06
0.04
0.02
TA = 125oC
TA = 25oC
0.9
0.8
0.7
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE (oC)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
15
12
9
VGS = 0V
10
VDS = - 5V
TA
=
25oC
-55oC
1
TA = 125oC
25oC
0.1
-55oC
6
0.01
0.001
3
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
0.5
1
1.5
2
2.5
3
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN304P Rev B(W)
Typical Characteristics
5
2100
1800
1500
1200
900
600
300
0
f = 1MHz
VGS = 0 V
VDS = -5V
ID = -2.4A
-10V
4
3
2
1
0
CISS
-15V
COSS
CRSS
0
5
10
15
20
0
2
4
6
8
10
12
14
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
20
15
10
5
SINGLE PULSE
RθJA = 270°C/W
TA = 25°C
RDS(ON)
1ms
10
10ms
100ms
1
1s
10s
DC
VGS =-4.5V
SINGLE PULSE
RθJA = 270oC/W
TA = 25oC
0.1
0.01
0
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
RθJA(t) = r(t) + Rθ
RθJA = 270 °C/W
JA
0.1
0.01
0.05
0.02
0.01
t1
t2
SINGLE PULSE
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN304P Rev B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
VCX™
QS™
FACT Quiet Series™
FAST
FASTr™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. E
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