FDMS2672 [FAIRCHILD]
N-Channel UltraFET Trench MOSFET 200V, 20A, 77mohm; N沟道UltraFET沟槽MOSFET 200V ， 20A ， 77mohm
| 型号： | FDMS2672 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel UltraFET Trench MOSFET 200V, 20A, 77mohm |
| 文件： | 总7页 (文件大小：508K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
February 2007
FDMS2672
tm
N-Channel UltraFET Trench MOSFET
200V, 20A, 77mΩ
Features
General Description
Max rDS(on) = 77mΩ at VGS = 10V, ID = 3.7A
Max rDS(on) = 88mΩ at VGS = 6V, ID = 3.5A
Low Miller Charge
UItraFET devices combine characteristics that enable
benchmark efficiency in power conversion applications.
Optimized for rDS(on), low ESR, low total and Miller gate charge,
these devices are ideal for high frequency DC to DC converters.
RoHS Compliant
Application
DC - DC Conversion
S
S
G
S
Pin 1
D
D
G
S
5
6
7
8
4
3
2
1
S
S
D
D
D
D
D
D
Power 56 (Bottom view)
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
Units
Drain to Source Voltage
Gate to Source Voltage
200
V
V
±20
Drain Current -Continuous (Silicon limited)
TC = 25°C
TA = 25°C
20
ID
-Continuous
-Pulsed
(Note 1a)
(Note 1a)
3.7
A
20
78
Power Dissipation
TC = 25°C
TA = 25°C
PD
W
Power Dissipation
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
1.6
50
°C/W
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
13’’
Tape Width
12mm
Quantity
FDMS2672
FDMS2672
Power 56
3000 units
1
©2007 Fairchild Semiconductor Corporation
FDMS2672 Rev.C
www.fairchildsemi.com
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
200
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
210
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 160V
1
µA
VGS = ±20V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
2
3.1
-10
4
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
mV/°C
VGS = 10V, ID = 3.7A
64
69
77
88
rDS(on)
gFS
Drain to Source On Resistance
VGS = 6V, ID = 3.5A
mΩ
VGS = 10V, ID = 3.7A TJ = 125°C
VDS = 10V, ID = 3.7A
129
14
156
Forward Transconductance
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
1740
95
2315
125
45
pF
pF
pF
Ω
VDS = 100V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
30
f = 1MHz
0.9
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
22
11
36
10
30
7
34
22
57
20
42
ns
ns
VDD = 100V, ID = 3.7A
VGS = 10V, RGEN = 6Ω
Turn-Off Delay Time
Fall Time
ns
ns
Qg(TOT)
Qgs
Qgd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0V to 10V
nC
nC
nC
VDD = 100V
ID = 3.7A
8
Drain-Source Diode Characteristics
VSD
trr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 3.7A (Note 2)
0.8
70
1.2
105
357
V
ns
nC
IF = 3.7A, di/dt = 100A/µs
Qrr
Reverse Recovery Charge
238
Notes:
2
1:
R
is determined with the device mounted on a 1in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper
a. 50°C/W when mounted on
a 1 in pad of 2 oz copper
2
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
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2
FDMS2672 Rev.C
Typical Characteristics TJ = 25°C unless otherwise noted
40
3.0
2.5
2.0
1.5
1.0
0.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
V
= 8V
GS
30
20
10
0
VGS = 5V
VGS = 6V
V
= 6V
GS
V
= 10V
GS
VGS = 8V
V
GS
= 5V
VGS = 10V
0
1
2
3
4
0
10
20
30
40
V
, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)
DS
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
2.4
200
175
150
125
100
75
ID = 3.7A
GS = 10V
I
D
= 4.5A
PULSE DURATION = 80µs
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
DUTY CYCLE = 0.5%MAX
T
A
= 150oC
T
A
= 25oC
50
-75 -50 -25
0
25 50 75 100 125 150
4
5
6
7
8
9
10
TJ, JUNCTION TEMPERATURE (oC)
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure4. On-Resistance vs Gate to
Source Voltage
25
40
10
V
GS
= 0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
20
T = 150oC
J
1
0.1
T = 150oC
15
10
5
J
T
= 25oC
J
T
= 25oC
J
T
J
= -55oC
0.01
1E-3
T
= -55oC
J
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
2
3
4
5
6
7
V , BODY DIODE FORWARD VOLTAGE (V)
SD
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
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3
FDMS2672 Rev.C
Typical Characteristics TJ = 25°C unless otherwise noted
10
4000
1000
C
iss
V
DD
= 50V
8
6
4
2
0
V
= 100V
DD
C
oss
V
= 150V
DD
C
rss
100
f = 1MHz
= 0V
V
GS
10
0
10
20
30
40
0.1
1
10
100
Q , GATE CHARGE(nC)
g
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
5
4
25
20
15
10
5
V
GS
= 10V
3
TJ = 25oC
V
GS
= 6V
2
TJ = 125oC
R
θJC
= 1.6oC/W
50
1
0.01
0
0.1
1
10
25
75
100
125
150
tAV, TIME IN AVALANCHE(ms)
TC, CASE TEMPERATURE (oC)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
60
10
2000
o
T
= 25 C
A
1000
100
10
100us
FOR TEMPERATURES
o
VGS = 10V
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
150 – T
1
0.1
1ms
A
----------------------
I = I
25
125
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
100ms
SINGLE PULSE
0.01
1E-3
1s
T
= MAX RATED
= 25OC
J
1
SINGLE PULSE
DC
T
A
0.3
10-3
10-2
10-1
t, PULSE WIDTH (s)
100
101
102
103
700
0.1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
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4
FDMS2672 Rev.C
Typical Characteristics TJ = 25°C unless otherwise noted
2
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
1E-3
5E-4
SINGLE PULSE
10-2
PEAK T = P
x Z
x R
+ T
θJA A
J
DM
θJA
10-3
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
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5
FDMS2672 Rev.C
www.fairchildsemi.com
6
FDMS2672 Rev.C
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Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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Obsolete
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
FDMS2672 Rev. C
7
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