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BD434S_NL [FAIRCHILD]

Power Bipolar Transistor, 4A I(C), 22V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE PACKAGE-3;
BD434S_NL
型号： BD434S_NL
厂家： FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述：

Power Bipolar Transistor, 4A I(C), 22V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE PACKAGE-3

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BD434/436/438  
Medium Power Linear and Switching  
Applications  
•
Complement to BD433, BD435 and BD437 respectively  
TO-126  
1. Emitter 2.Collector 3.Base  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
CBO  
: BD434  
: BD436  
: BD438  
- 22  
- 32  
- 45  
V
V
V
V
CES  
CEO  
EBO  
: BD434  
: BD436  
: BD438  
- 22  
- 32  
- 45  
V
V
V
V
V
: BD434  
: BD436  
: BD438  
- 22  
- 32  
- 45  
V
V
V
Emitter-Base Voltage  
Collector Current (DC)  
- 5  
- 4  
V
A
I
I
I
C
*Collector Current (Pulse)  
Base Current  
- 7  
A
CP  
B
- 1  
A
P
Collector Dissipation (T =25°C)  
36  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 65 ~ 150  
STG  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max. Units  
V
(sus)  
Collector-Emitter Sustaining Voltage  
CEO  
CBO  
CEO  
EBO  
: BD434  
: BD436  
: BD438  
I = - 100mA, I = 0  
- 22  
- 32  
- 45  
V
V
V
C
B
I
I
I
Collector Cut-off Current  
: BD434  
V
V
V
= - 22V, I = 0  
E
CB  
CB  
CB  
= - 32V, I = 0  
- 100  
- 100  
- 100  
µA  
µA  
µA  
E
: BD436  
: BD438  
= - 45V, I = 0  
E
Collector Cut-off Current  
: BD434  
V
V
V
= - 22V, V = 0  
- 100  
- 100  
- 100  
µA  
µA  
µA  
CE  
CE  
CE  
BE  
: BD436  
: BD438  
= - 32V, V = 0  
BE  
= - 45V, V = 0  
BE  
Emitter Cut-off Current  
V
= - 5V, I = 0  
- 1  
mA  
EB  
C
h
* DC Current Gain  
: BD434/436  
: BD438  
FE  
V
= - 5V, I = - 10mA  
40  
30  
85  
50  
40  
140  
140  
140  
CE  
C
: ALL DEVICE  
: BD434/436  
: BD438  
V
V
= - 1V, I = - 500mA  
C
CE  
CE  
= - 1V, I = - 2A  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
CE  
BE  
: BD434  
: BD436  
: BD438  
I = - 2A, I = - 0.2A  
- 0.2  
- 0.2  
- 0.2  
- 0.5  
- 0.5  
- 0.6  
V
V
V
C
B
(on)  
* Base-Emitter ON Voltage  
: BD434  
V
= - 1V, I = - 2A  
- 1.1  
- 1.1  
- 1.2  
V
V
V
CE  
C
: BD436  
: BD438  
f
Current Gain Bandwidth Product  
V
= - 1V, I = - 250mA  
3
MHz  
T
CE  
C
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Typical Characteristics  
1000  
100  
10  
-1  
VCE = -1V  
IC = 10 IB  
-0.1  
1
-0.01  
-0.1  
-0.01  
-0.1  
-1  
-10  
-100  
-1  
-10  
IC[A], COLLECTOR CURRENT  
IC[A], COLLECTOR CURRENT  
Figure 1. DC current Gain  
Figure 2. Collector-Emitter Saturation Voltage  
-5.0  
-1000  
VCE = -1V  
-4.5  
-4.0  
-3.5  
-3.0  
-2.5  
-2.0  
-1.5  
-1.0  
-0.5  
-0.0  
-100  
-10  
-1  
-0.0  
-0.5  
-1.0  
-1.5  
-2.0  
-0.1  
-1  
-10  
-100  
-1000  
VBE[V], BASE-EMITTER VOLTAGE  
VCB[V], COLLECTOR BASE VOLTAGE  
Figure 3. Base-Emitter On Voltage  
Figure 4. Collector-Base Capacitance  
-10  
48  
IC MAX. (Pulsed)  
10µs  
42  
36  
30  
24  
18  
12  
6
IC Max. (Continuous)  
-1  
BD434  
BD436  
BD438  
-0.1  
0
-1  
-10  
-100  
0
25  
50  
75  
100  
125  
150  
175  
200  
TC[oC], CASE TEMPERATURE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 5. Safe Operating Area  
Figure 6. Power Derating  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
Package Demensions  
TO-126  
8.00 ±0.30  
3.25 ±0.20  
ø3.20 ±0.10  
(1.00)  
(0.50)  
0.75 ±0.10  
1.75 ±0.20  
1.60 ±0.10  
0.75 ±0.10  
#1  
+0.10  
–0.05  
0.50  
2.28TYP  
[2.28±0.20]  
2.28TYP  
[2.28±0.20]  
Dimensions in Millimeters  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, June 2001  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
SuperSOT™-3  
ACEx™  
Bottomless™  
CoolFET™  
CROSSVOLT™  
DenseTrench™  
DOME™  
EcoSPARK™  
E2CMOS™  
EnSigna™  
FAST®  
FASTr™  
FRFET™  
GlobalOptoisolator™  
GTO™  
OPTOPLANAR™  
PACMAN™  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TinyLogic™  
UHC™  
POP™  
PowerTrench®  
QFET™  
HiSeC™  
QS™  
UltraFET®  
VCX™  
ISOPLANAR™  
LittleFET™  
MicroFET™  
MICROWIRE™  
OPTOLOGIC™  
QT Optoelectronics™  
Quiet Series™  
SLIENT SWITCHER®  
SMART START™  
Stealth™  
FACT™  
FACT Quiet Series™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems  
which, (a) are intended for surgical implant into the body,  
or (b) support or sustain life, or (c) whose failure to perform  
when properly used in accordance with instructions for use  
provided in the labeling, can be reasonably expected to  
result in significant injury to the user.  
2. A critical component is any component of a life support  
device or system whose failure to perform can be  
reasonably expected to cause the failure of the life support  
device or system, or to affect its safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Product Status  
Definition  
Advance Information  
Formative or In  
Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice in order to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice in order to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
©2001 Fairchild Semiconductor Corporation  
Rev. H2  

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