BD435 [TRSYS]
EPITAXIAL SILICON POWER TRANSISTORS; 外延硅功率晶体管
| 型号： | BD435 |
| 厂家： | 
TRANSYS Electronics Limited |
| 描述： | EPITAXIAL SILICON POWER TRANSISTORS |
| 文件： | 总3页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
EPITAXIAL SILICON POWER TRANSISTORS
BD433
BD435
BD437
BD439
BD441
NPN
BD434
BD436
BD438
BD440
BD442
PNP
E
C
B
TO126
Plastic Package
Intended for use in Medium Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
BD433
BD434
22
BD435
BD436
32
BD437
BD438
45
BD439
BD440
60
BD441
BD442
80
UNIT
VCBO
VCES
VCEO
VEBO
IC
V
V
V
V
A
A
A
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage
Emitter Base Voltage
45
45
60
60
22
22
32
32
80
80
5.0
4.0
7.0
1.0
Collector Current
ICM
Collector Peak Current (t=10ms
IB
Base Current
Total Dissipation @ TC=25ºC
Total Dissipation @ Ta=25ºC
Derate above 25ºC
PD
PD
W
36.0
W
1.25
10
mW/ ºC
Operating and Storage
Junction Temperature Range
Tj, Tstg
- 65 to 150
ºC
THERMAL RESISTANCE
Junction to Case
Rth (j-c)
Rth (j-a)
ºC/W
ºC/W
3.5
Junction to Ambient in free air
100
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
TEST CONDITION
DESCRIPTION
SYMBOL
BD433 BD435 BD437 BD439 BD441
BD434 BD436 BD438 BD440 BD442
UNIT
VCB=Rated VCBO, IE=0
VBE=0, VCE=Rated VCES
VEB=5V, IC=0
ICBO
ICES
Collector Cut off Current
Collector Cut off Current
Emitter Cut off Current
<100 <100 <100
<100 <100 <100
<100
<100
<1.0
>60
<100
<100
<1.0
>80
mA
mA
mA
V
IEBO
<1.0
>22
<1.0
>32
<1.0
>45
IC=100mA, IB=0
*VCEO (sus)
Collector Emitter Sustaining
Voltage
IC=2.0A, IB=0.2A
*VCE (sat)
<0.5
<0.5
<0.6
<0.8
<0.8
V
Collector Emitter Saturation
Voltage
IC=10mA, VCE=5V ALL
*VBE (on)
Base Emitter On Voltage
typ 0.58
<1.2
V
V
IC=2.0A, VCE=1V
<1.1
<1.1
<1.5
<1.5
EPITAXIAL SILICON POWER TRANSISTORS
BD433
BD435
BD437
BD439
BD441
NPN
BD434
BD436
BD438
BD440
BD442
PNP
E
C
B
TO126
Plastic Package
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
TEST CONDITION
DESCRIPTION
SYMBOL
BD433 BD435 BD437 BD439 BD441
UNIT
BD434 BD436 BD438 BD440 BD442
IC=10mA, VCE=5V
IC=500mA, VCE=1V
IC=2.0A, VCE=1V
*hFE
DC Current Gain
>40
>85
>50
>40
>85
>50
>30
>85
>40
>20
>40
>25
>15
>40
>15
Matched
Pairs
*hFE1 / hFE2
IC=500mA, VCE=1V ALL
IC=250mA, VCE=1V ALL
<1.4
>3.0
fT
Current Gain Bandwidth
Product
MHz
*Pulsed Pulse Duration=300ms, Duty Cycle=1.5%
BD433
BD435
BD437
BD439
BD441
NPN
BD434
BD436
BD438
BD440
BD442
PNP
TO126
Plastic Package
TO-126 (SOT-32) Plastic Package
A
C
DIM
A
MIN
7.4
MAX
7.8
N
10.5
2.4
10.8
2.7
B
P
B
C
D
E
0.7
0.9
2.25 TYP.
S
F
0.49
0.75
1
2
G
L
4.5 TYP.
3
Pin Configuration
15.7 TYP.
1.27 TYP.
3.75 TYP.
1
2
3
1. Emitter
2. Collector
3. Base
L
M
N
P
3.0
2.5 TYP.
3.2
D
S
F
All dimensions in mm.
E
M
G
TO-126 TUBE PACKING
±0.50
532.00
3.70
±0.05
ø3.10 THRU (2 NOS)
MARKING SIDE
R 0.50
MARKING SIDE
+0
-1.00
390.00
±0.10
ø5.90 THRU (2 NOS)
0.65
71.00
A
AMMO PACK SIZE
1.00
1.20
Label
20 Tubes/Ammo Pack
1000 Pcs./Ammo Pack
10.0
A
SECTION AA
±0.10
11.95
+0.1
-0
3.0
3.5
R2.5
PRINTING AREA
7.6
3CP 66382 ANTISTATICz
03
PVC
6.5
11.0
6.0
2
9.0
4
20.0
7.0 3 7.0 3.5 7.0 6.0
ARROW
3.35
+0
-0.1
1.0
MATL:- PVC BLACK WITH
ANTISTATIC DIPPING
GENERAL TOLERANCE
0 mm 0.01 mm 30.01 mm 120.01 mm ABOVE
END PIN (2 PCS/TUBE)
ANGULAR
±0' 30"
5 mm 30 mm
120 mm 315 mm
315 mm
3.0
±0.1 ±0.2
±0.3 ±0.5
±0.8
Notes:
1. All print in black.
DIN SYMBOL
All dimensions in mm
2. All text in Helvetia medium font.
Packing Detail
PACKAGE
STANDARD PACK
INNER CARTON BOX
OUTER CARTON BOX
Details
500 pcs/polybag 340 gm/500 pcs 3" x 7.5" x 7.5"
50 pcs/tube 73 gm/50 pcs 3" x 3.7" x 21.5"
Net Weight/Qty
Size
Qty
Size
Qty
Gr Wt
TO-126 Bulk
TO-126 Tube
2K
1K
17" x 15" x 13.5"
19" x 19" x 19"
32K
10K
31 kgs
15 kgs
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