BD435 [FAIRCHILD]
Medium Power Linear and Switching Applications; 中功率线性和开关应用
| 型号： | BD435 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Medium Power Linear and Switching Applications |
| 文件： | 总5页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BD433/435/437
Medium Power Linear and Switching
Applications
•
Complement to BD434, BD436 and BD438 respectively
TO-126
1. Emitter 2.Collector 3.Base
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
CBO
: BD433
: BD435
: BD437
22
32
45
V
V
V
V
CES
CEO
EBO
: BD433
: BD435
: BD437
22
32
45
V
V
V
V
V
: BD433
: BD435
: BD437
22
32
45
V
V
V
Emitter-Base Voltage
Collector Current (DC)
5
V
A
I
I
I
4
C
*Collector Current (Pulse)
Base Current
7
A
CP
B
1
36
A
P
Collector Dissipation (T =25°C)
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 65 ~ 150
STG
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
V
(sus)
Collector-Emitter Sustaining Voltage
CEO
CBO
CEO
EBO
: BD433
: BD435
: BD437
I = 100mA, I = 0
22
32
45
V
V
V
C
B
I
I
I
Collector Cut-off Current
: BD433
V
V
V
= 22V, I = 0
100
100
100
µA
µA
µA
CB
CB
CB
E
: BD435
: BD437
= 32V, I = 0
E
= 45V, I = 0
E
Collector Cut-off Current
: BD433
V
V
V
= 22V, V = 0
100
100
100
µA
µA
µA
CE
CE
CE
BE
: BD435
: BD437
= 32V, V = 0
BE
= 45V, V = 0
BE
Emitter Cut-off Current
V
= 5V, I = 0
1
mA
EB
C
h
* DC Current Gain
: BD433/435
: BD437
FE
V
= 5V, I = 10mA
40
30
85
50
40
130
130
140
CE
C
: ALL DEVICE
: BD433/435
: BD437
V
V
= 1V, I = 500mA
C
CE
CE
= 1V, I = 2A
C
V
V
(sat)
* Collector-Emitter Saturation Voltage
CE
BE
: BD433
: BD435
: BD437
I = 2A, I = 0.2A
0.2
0.2
0.2
0.5
0.5
0.6
V
V
V
C
B
(on)
* Base-Emitter ON Voltage
: BD433
V
= 1V, I = 2A
1.1
1.1
1.2
V
V
V
CE
C
: BD435
: BD437
f
Current Gain Bandwidth Product
V
= 1V, I = 250mA
3
MHz
T
CE
C
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical Characteristics
1
1000
100
10
VCE = 1V
IC = 10 IB
0.1
1
0.01
0.01
0.1
0.1
1
10
100
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
5.0
1000
VCE = 1V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
0.0
0.5
1.0
1.5
2.0
0.1
1
10
100
1000
VBE[V], BASE-EMITTER VOLTAGE
VCB[V], COLLECTOR BASE VOLTAGE
Figure 3. Base-Emitter On Voltage
Figure 4. Collector-Base Capacitance
10
48
IC MAX. (Pulsed)
10µs
42
36
30
24
18
12
6
IC Max. (Continuous)
1
BD433
BD435
BD437
0.1
0
1
10
100
0
25
50
75
100
125
150
175
200
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Package Demensions
TO-126
8.00 ±0.30
3.25 ±0.20
ø3.20 ±0.10
(1.00)
(0.50)
0.75 ±0.10
1.75 ±0.20
1.60 ±0.10
0.75 ±0.10
#1
+0.10
–0.05
0.50
2.28TYP
[2.28±0.20]
2.28TYP
[2.28±0.20]
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
SuperSOT™-3
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FAST®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
OPTOPLANAR™
PACMAN™
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
POP™
PowerTrench®
QFET™
HiSeC™
QS™
UltraFET®
VCX™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
SMART START™
Stealth™
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H2
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