BD435 [STMICROELECTRONICS]
COMPLEMENTARY SILICON POWER TRANSISTORS; 互补硅功率晶体管
| 型号： | BD435 |
| 厂家： | 
ST |
| 描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 文件： | 总4页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BD433/5/7
BD434/6/8
COMPLEMENTARY SILICON POWER TRANSISTORS
■
■
SGS-THOMSON PREFERRED SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The BD433, BD435, and BD437 are silicon
epitaxial-base NPN power transistors in Jedec
SOT-32 plastic package, intented for use in
medium power linear and switching applications.
The BD433 is especially suitable for use in
car-radio output stages.
1
2
3
The complementary PNP types are BD434,
BD436, and BD438 respectively.
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
PNP
BD433
BD434
22
BD435
BD437
BD438
45
BD436
VCBO
VCES
VCEO
VEBO
IC
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
32
V
V
22
32
45
22
32
45
V
5
V
4
A
ICM
Collector Peak Current (t ≤ 10 ms)
Base Current
7
A
IB
1
36
A
o
Ptot
Tstg
Tj
Total Dissipation at Tc ≤ 25 C
W
oC
oC
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
1/4
June 1997
BD433/434/435/436/437/438
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
3.5
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
for BD433/434
for BD435/436
for BD437/438
VCB = 22 V
VCB = 32 V
VCB = 45 V
100
100
100
µA
µA
µA
ICES
Collector Cut-off
Current (VBE = 0)
for BD433/434
for BD435/436
for BD437/438
VCE = 22 V
VCE = 32 V
VCE = 45 V
100
100
100
µA
µA
µA
IEBO
Emitter Cut-off Current VEB = 5 V
(IC = 0)
1
mA
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
for BD433/434
for BD435/436
for BD437/438
22
32
45
V
V
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 2 A
IB = 0.2 A
for BD433/434
for BD435/436
for BD437/438
0.2
0.2
0.2
0.5
0.5
0.6
V
V
V
VBE
Base-Emitter Voltage
DC Current Gain
IC = 10 mA
IC = 2 A
VCE = 5 V
VCE = 1 V
for BD433/434
for BD435/436
for BD437/438
0.58
V
1.1
1.1
1.2
V
V
V
hFE
IC = 10 mA
VCE = 5 V
for BD433/434
for BD435/436
for BD437/438
VCE = 1 V
40
40
30
85
130
130
130
140
IC = 500 mA
IC = 2 A
VCE = 1 V
for BD433/434
for BD435/436
for BD437/438
50
50
40
h
FE1/hFE2 Matched Pair
fT Transition frequency
IC = 500 mA
IC = 250 mA
VCE = 1 V
VCE = 1 V
1.4
3
MHz
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/4
BD433/434/435/436/437/438
SOT-32 (TO-126) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
7.4
TYP.
MAX.
7.8
MIN.
0.291
0.413
0.028
0.019
0.040
0.039
0.606
MAX.
0.307
0.445
0.035
0.030
0.106
0.050
0.629
A
B
10.5
0.7
10.8
0.9
b
b1
C
0.49
2.4
0.75
2.7
c1
D
1.0
1.3
15.4
16.0
e
2.2
3.8
0.087
0.150
e3
F
4.15
3
4.65
0.163
0.118
0.183
G
H
3.2
0.126
0.100
2.54
H2
2.15
0.084
H2
0016114
3/4
BD433/434/435/436/437/438
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
4/4
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