首页 > 2N7002V_10

2N7002V_10

更新时间：2024-09-18 12:53:17

品牌：FAIRCHILD

描述：N-Channel Enhancement Mode Field Effect Transistor

PDF下载

中文翻译

PCB计价

概述
数据手册

如果您发现信息不准确，欢迎纠错

2N7002V_10 概述

N-Channel Enhancement Mode Field Effect Transistor N沟道增强型网络场效晶体管

2N7002V_10 数据手册

通过下载2N7002V_10数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

PDF下载

April 2010

2N7002V/VA

N-Channel Enhancement Mode Field Effect Transistor

Features

• Dual N-Channel MOSFET

• Low On-Resistance

• Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• Ultra-Small Surface Mount Package

• Lead Free By Design/RoHS Compliant

(Pin4)

SOT-563F

* Pin1 and Pin4 are exchangeable.

Marking : AB

Marking : AC

Absolute Maximum Ratings * T_A= 25°C unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Value

Units

V_DGR

Drain-Gate Voltage R_GS≤ 1.0MΩ

V_GSS

Gate-Source Voltage

Continuous

Pulsed

±20

±40

I_D

Drain Current

Continuous

Pulsed

280

1.5

T_{J ,}T_STGJunction and Storage Temperature Range

-55 to +150

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.

Thermal Characteristics

Symbol

Parameter

Total Device Dissipation

Derating above T_A= 25°C

Value

Units

P_D

250

2.0

mW/°C

R_θJA

Thermal Resistance, Junction to Ambient *

500

°C/W

* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, Minimum land pad size.

www.fairchildsemi.com

2N7002V/VA Rev. A1

Electrical Characteristics T_A= 25°C unless otherwise noted

Symbol Parameter Test Condition

Off Characteristics (Note1)

Min.

Typ.

Max. Units

BV_DSS

I_DSS

Drain-Source Breakdown Voltage V_GS=0V, I_D=10μA

Zero Gate Voltage Drain Current V_DS=60V, V_GS=0V

_DS=60V, V_GS=0V, @T_C=125°C

0.001

1.0

500

μA

I_GSS

Gate-Body Leakage

V_GS=±20V, V_DS=0V

0.2

±100

On Characteristics (Note1)

V_GS(th)

Gate Threshold Voltage

V_DS=V_GS, I_D=250μA

1.0

1.76

2.5

R_DS(ON)

Static Drain-Source

On-Resistance

V_GS=5V, I_D=0.05A,

1.6

2.53

7.5

13.5

V_GS=10V, I_D=0.5A, @T_J=125°C

I_D(ON)

g_FS

On-State Drain Current

V_GS=10V, V_DS=7.5V

V_DS=10V, I_D=0.2A

0.5

1.43

Forward Transconductance

356.5

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

37.8

12.4

6.5

Output Capacitance

V_DS=25V, V_GS=0V, f=1.0MHz

Reverse Transfer Capacitance

7.0

Switching Characteristics

t_D(ON)

Turn-On Delay Time

Turn-Off Delay Time

5.85

12.5

V_DD=30V, I_D=0.2A, V_GEN=10V

R_L=150Ω, R_GEN=25Ω

t_D(OFF)

Note1 : Short duration test pulse used to minimize self-heating effect.

www.fairchildsemi.com

2N7002V/VA Rev. A1

Typical Performance Characteristics

Figure 1. On-Region Characteristics

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current

3.0

1.6

V_GS= 3V

4.5V

V_GS= 10V

1.4

2.5

2.0

1.5

1.0

1.2

1.0

0.8

0.6

10V

0.4

0.2

0.0

0.2

0.4

0.6

0.8

1.0

150

I_D. DRAIN-SOURCE CURRENT(A)

V_DS. DRAIN-SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature

Figure 4. On-Resistance Variation with

Gate-Source Voltage

3.0

V_GS= 10V

I_D= 500 mA

2.5

2.0

1.5

1.0

0.5

2.5

I_D= 500 mA

2.0

I_D= 50 mA

1.5

1.0

-50

100

T_J. JUNCTION TEMPERATURE(^oC)

V_GS. GATE-SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

Figure 6. Gate Threshold Variation with

Temperature

2.5

1.0

T_J= -25^oC

V_DS= 10V

V_GS= V_DS

150^oC

0.8

25^oC

2.0

1.5

1.0

125^oC

0.6

I_D= 1 mA

75^oC

I_D= 0.25 mA

0.4

0.2

0.0

-50

100

150

T_J. JUNCTION TEMPERATURE(^oC)

V_GS. GATE-SOURCE VOLTAGE (V)

2N7002V/VA Rev. A1

www.fairchildsemi.com

Typical Performance Characteristics

Figure 7. Reverse Drain Current Variation with

Diode Forward Voltage and Temperature

Figure 8. Power Derating

300

250

200

150

100

V_GS= 0 V

150^oC

100

25^oC

-55^oC

0.0

0.2

0.4

0.6

0.8

1.0

100

125

150

175

T_a[^oC], AMBIENT TEMPERATURE

V_SD, Body Diode Forward Voltage [V]

2N7002V/VA Rev. A1

www.fairchildsemi.com

Package Dimensions

SOT-563F

1.70

1.50

0.50

0.30

0.15

0.50

1.20 BSC

(0.20)

1.60

1.25

1.80

0.1 C B A

0.30

0.55

0.50

1.00

TOP VIEW

LAND PATTERN RECOMMENDATION

0.60

0.56

0.18

0.10

SEE DETAIL A

0.35 BSC

0.20 BSC

BOTTOM VIEW

DETAIL A

0.10

0.00

SCALE 2 : 1

Dimensions in Millimeters

2N7002V/VA Rev. A1

www.fairchildsemi.com

TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not

intended to be an exhaustive list of all such trademarks.

FRFET^®

PowerTrench^®

PowerXS™

Programmable Active Droop¥

QFET^®

The Power Franchise^®

AccuPower¥

Auto-SPM¥

Build it Now¥

CorePLUS¥

CorePOWER¥

CROSSVOLT¥

CTL¥

Global Power Resource^SM

Green FPS¥

Green FPS¥ e-Series¥

Gmax¥

TinyBoost¥

TinyBuck¥

QS¥

Quiet Series¥

RapidConfigure¥

GTO¥

IntelliMAX¥

ISOPLANAR¥

MegaBuck¥

MICROCOUPLER¥

MicroFET¥

TinyCalc¥

TinyLogic^®

Current Transfer Logic¥

DEUXPEED^®

Dual Cool™

TINYOPTO¥

TinyPower¥

TinyPWM¥

TinyWire¥

TriFault Detect¥

TRUECURRENT¥*

PSerDes¥

Saving our world, 1mW/W/kW at a time™

SignalWise¥

SmartMax¥

EcoSPARK^®

EfficientMax¥

MicroPak¥

SMART START¥

SPM^®

MicroPak2¥

MillerDrive¥

MotionMax¥

Motion-SPM¥

OptoHiT™

Fairchild^®

STEALTH¥

SuperFET¥

SuperSOT¥-3

SuperSOT¥-6

SuperSOT¥-8

SupreMOS¥

Fairchild Semiconductor^®

FACT Quiet Series¥

FACT^®

UHC^®

Ultra FRFET¥

UniFET¥

VCX¥

VisualMax¥

XS™

OPTOLOGIC^®

FAST^®

OPTOPLANAR^®

FastvCore¥

SyncFET¥

FETBench¥

FlashWriter^®

Sync-Lock™

PDP SPM™

Power-SPM¥

FPS¥

F-PFS¥

* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR

CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE

SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,

WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE

EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems which, (a) are

intended for surgical implant into the body or (b) support or sustain life,

and (c) whose failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to

cause the failure of the life support device or system, or to affect its

safety or effectiveness.

ANTI-COUNTERFEITING POLICY

Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,

under Sales Support.

Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.

Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,

and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of

counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are

listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have

full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.

Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide

any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our

customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status

Definition

Datasheet contains the design specifications for product development. Specifications may change in

any manner without notice.

Advance Information

Preliminary

Formative / In Design

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild

Semiconductor reserves the right to make changes at any time without notice to improve design.

First Production

Full Production

Not In Production

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes

at any time without notice to improve the design.

No Identification Needed

Obsolete

Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.

The datasheet is for reference information only.

Rev. I47

www.fairchildsemi.com

2N7002V_10 相关器件

型号	制造商	描述	价格	文档
2N7002W	DIODES	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	获取价格
2N7002W	ONSEMI	Small Signal MOSFET 60 V, 340 mA, Single, N−Channel, SC−70	获取价格
2N7002W	SECOS	Small Signal MOSFET	获取价格
2N7002W	UTC	300mA, 60V N-CHANNEL POWER MOSFET	获取价格
2N7002W	MCC	N-Channel Enhancement Mode Field Effect Transistor	获取价格
2N7002W	TYSEMI	Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance	获取价格
2N7002W	CJ	SOT-323	获取价格
2N7002W	YANGJIE	SOT-323	获取价格
2N7002W	BL Galaxy Electrical	0.115A, 60V, 0.2W, N Channel, Small Signal MOSFETs	获取价格
2N7002W	KEXIN	N-Channel MOSFET	获取价格