2N7002W [DIODES]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
| 型号： | 2N7002W |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总3页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
·
·
·
·
·
·
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
SOT-323
Dim
A
Min
0.30
1.15
2.00
Max
0.40
1.35
2.20
A
D
B
C
TOP VIEW
B
C
D
0.65 Nominal
G
S
E
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.25
Mechanical Data
D
G
E
G
H
·
·
Case: SOT-323, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
H
J
M
K
K
0.90
0.25
0.10
·
·
·
Terminal Connections: See Diagram
Marking: K72
Weight: 0.006 grams (approx.)
J
L
L
M
All Dimensions in mm
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Drain-Source Voltage
Symbol
2N7002W
Units
VDSS
VDGR
60
60
V
V
Drain-Gate Voltage RGS £ 1.0MW
Gate-Source Voltage
Continuous
Pulsed
20
40
VGSS
V
115
73
800
Drain Current (Note 1)
Continuous
Continuous @ 100°C
Pulsed
ID
mA
Total Power Dissipation (Note 1)
Derating above TA = 25°C
200
1.60
mW
mW/°C
Pd
RqJA
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
625
K/W
°C
Tj, TSTG
-55 to +150
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £ 300ms, duty cycle £ 2%.
DS30099 Rev. 4P-1
1 of 3
2N7002W
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
IDSS
VGS = 0V, ID = 10mA
60
¾
¾
70
¾
¾
¾
V
@ TC
=
25°C
1.0
500
VDS = 60V, VGS = 0V
µA
nA
@ TC = 125°C
VGS
= 20V, VDS = 0V
IGSS
Gate-Body Leakage
10
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(th)
V
DS = VGS, ID =-250mA
1.0
¾
2.0
V
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
VGS = 10V, VDS = 7.5V
Static Drain-Source On-Resistance
@ Tj = 25°C
@ Tj = 125°C
3.2
4.4
7.5
13.5
RDS (ON)
¾
W
ID(ON)
gFS
On-State Drain Current
0.5
80
1.0
¾
¾
A
VDS =10V, ID = 0.2A
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
¾
mS
Ciss
Coss
Crss
¾
¾
¾
22
11
50
25
pF
pF
pF
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
2.0
5.0
V
DD = 30V, ID = 0.2A,
RL = 150W, VGEN = 10V,
GEN = 25W
tD(ON)
¾
¾
7.0
11
20
20
ns
ns
tD(OFF)
Turn-Off Delay Time
R
Note: 1. Valid provided that terminals are kept at specified ambient temperature.
2. Pulse width £ 300ms, duty cycle £ 2%.
DS30099 Rev. 4P-1
2 of 3
2N7002W
1.0
7
VGS = 10V
9.0V
8.0V
Tj = 25°C
7.0V
6.5V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
6
5
4
3
2
0.8
0.6
VGS = 5.0V
5.5V
5.0V
2.5V
2.0/1.0V
VGS = 10V
0.4
0.2
0
1
0
0
0.2
0.4
0.6
0.8
1.0
3
0
1
2
4
5
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
Fig. 2 On-Resistance vs Drain Current
6
5
4
3
2
2.0
1.5
1.0
VGS = 10V, ID = 0.5A
ID = 500mA
ID = 50mA
VGS = 5.0V, ID = 0.05A
0.5
0
1
0
-55 -30
-5
20
45
70 95
120 145
0
2
4
6
8
10 12 14 16 18
Tj, JUNCTION TEMPERATURE (°C)
Fig. 3 On-Resistance vs Junction Temperature
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
DS30099 Rev. 4P-1
3 of 3
2N7002W
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