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2N7002W_05 [PANJIT]

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
2N7002W_05
型号： 2N7002W_05
厂家： PAN JIT INTERNATIONAL INC.    PAN JIT INTERNATIONAL INC.
描述：

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
N沟道增强型网络场效晶体管

晶体 晶体管
文件： 总4页 (文件大小：106K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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2N7002W  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Unit: inch (mm)  
SOT-323  
POWER  
200 mWatts  
60 Volts  
VOLTAGE  
FEATURES  
• N-channel enhancement mode field effect transistor,designed  
for high speed pulse amplifier and drive application,which  
ismanufactured by the N-channel DMOS process.  
• High density cell design for low RDS(ON)  
.087(2.2)  
.070(1.8)  
• Voltage controlled small signal switching.  
• Rugged and reliabale.  
.054(1.35)  
.045(1.15)  
• High saturation current capability.  
• High-speed switching.CMOS logic compatible.  
• CMOS logic compatible input.  
• Not thermal runaway.  
.006(.15)  
.002(.05)  
.056(1.40)  
.047(1.20)  
• No secondary breakdown.  
• Pb free product : 99% Sn above can meet RoHS environment  
substance directive request  
.004(.10)MAX.  
.016(.40)  
.078(.20)  
MECHANICALDATA  
• Case: SOT-323, Plastic  
• Terminals: Solderable per MIL-STD-750, Method 2026  
• Approx. Weight: 0.0048 gram  
• Marking: 72W  
ABSOLUTE RATINGS  
PARAMETER  
Symbol  
Value  
Units  
V
Drain-Source Voltagee  
Drain-gate Voltagee  
Gate-Source Voltage  
Drain Current  
VDSS  
VDRG  
VGSS  
ID  
60  
60  
20  
V
V
115  
mA  
mW  
O C  
Total Power Dissipation  
PD  
200  
Operating and Storage Temperature Range  
Thermal Risistance,Junction-to-Ambient  
TJ, TSTG  
-55 to + 150  
625  
RθJA  
O C/W  
D
3
Note 1: RGS<20K Ω  
2: FR-5 board 1.0x0.75x0.062 inch witg minmum recommended pad layout  
1
2
G
S
STAD-DEC.07.2005  
PAGE . 1  
2N7002W  
ELECTRICAL CHARACTERISTICS TA=25OC Unless otherwise noted  
PARAMETER  
Symbol  
Test Condition  
MIN.  
TYP.  
MAX.  
Units  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage, Forward  
Gate-Body Leakage, Reverse  
BVDSS  
V
GS=0V, I  
D
=10uA  
60  
--  
80  
--  
--  
V
V
V
DS=60V, VGS=0V, T  
DS=60V, VGS=0V, T  
J
J
=25O  
=125O  
C
C
1.0  
0.5  
uA  
mA  
I
DSS  
I
I
GSSF  
GSSR  
V
V
DS=0, VGS=20V  
DS=0, VGS=20V  
--  
--  
100  
nA  
nA  
--  
--  
-100  
ON CHARACTERISTIC(note1)  
Gate Threshold Voltage  
V
R
V
I
GS(th  
)
V
V
DS=VGS, I  
D
=250uA  
1.0  
--  
2.1  
3.7  
--  
2.5  
2.5  
V
Static Drain-Source On-Resisitance  
Drain-Source On-Voltage  
DS(ON)  
DS(ON)  
D(ON)  
GS=10V, I  
GS=10V, I  
D
D
=500mA, T  
=500mA  
J C  
=25O  
Ω
V
V
3.75  
1.5  
--  
V
GS=5V, ID=50mA  
On-State Drain Current  
VGS=10V, VDS>2VDS(ON)  
500  
80  
--  
--  
--  
mA  
mS  
Forward Transconductance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
G
FS  
V
DS>2VDS(ON), I  
D
=200mA  
--  
G
ISS  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
50  
25  
5
pF  
pF  
pF  
ns  
ns  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-On Time  
G
OSS  
RSS  
V
DS=25V, VGS=0V, f=1.0MHz  
G
T
ON  
20  
20  
V
V
DD=30V, R  
GS=10V, RGEN=25Ω  
L=25Ω, ID=500mA  
Turn-Off Time  
T
OFF  
STAD-DEC.07.2005  
PAGE . 2  
2N7002W  
ELECTRICALCHARACTERISTICSCURVE  
2.0  
1.0  
0.8  
0.6  
0.4  
0.2  
0
TA  
= 25oC  
V
DS=10V  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
25oC  
-55oC  
V
GS=10V  
9V  
125oC  
8V  
7V  
6V  
5V  
4V  
3V  
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10  
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10  
V
DS, DRAIN SOURCE VOLTAGE(VOLTS)  
VGS, GATE SOURCE VOLTAGE(VOLTS)  
Figure 1. Ohmic Region  
Fig. 9 Z-Current vs. Z-Voltage  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
1.2  
1.05  
1.1  
V
GS=10V  
=200mA  
V
DS=VGS  
=1.0mA  
I
D
I
D
1.10  
1.0  
0.95  
0.9  
0.85  
0.8  
0.75  
0.7  
-60  
-20  
+20  
+60  
+100  
+140  
-60  
-20  
+20  
+60  
+100  
+140  
T,TEMPERATURE(oC)  
T,TEMPERATURE(oC)  
Figure 4. Temperature versus Gate  
Threshold Voltage  
Figure 3. Temperature versus Static  
Drain-Source On-Resistance  
STAD-DEC.07.2005  
PAGE . 3  
2N7002W  
MOUNTING PAD LAYOUT  
ORDER INFORMATION  
• Packing information  
T/R - 12K per 13" plastic Reel  
T/R - 3K per 7" plastic Reel  
LEGAL STATEMENT  
Copyright PanJit International, Inc 2005  
The information presented in this document is believed to be accurate and reliable. The specifications and information  
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the  
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or  
systems. Pan Jit does not convey any license under its patent rights or rights of others.  
STAD-DEC.07.2005  
PAGE . 4  

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