2N7002W_08 [DIODES]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
| 型号： | 2N7002W_08 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总3页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7002W
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
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•
•
•
•
•
•
Low-On Resistance
Low Gate Threshold Voltage
Low Input Capacitance
•
•
Case: SOT-323
Case Material: Molded Plastic, "Green" Molding Compound,
Note 4. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
•
•
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant (Note 2)
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•
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SOT-323
Drain
D
Gate
G
S
Source
TOP VIEW
TOP VIEW
Equivalent Circuit
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
Value
60
60
Unit
V
VDSS
VDGR
V
Drain-Gate Voltage RGS ≤ 1.0MΩ
Gain-Source Voltage
Continuous
Pulsed
Continuous
Continuous @ 100°C
Pulsed
±20
±40
115
73
V
VGSS
Drain Current (Note 1)
mA
ID
800
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Derating above TA = 25°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
Rθ
Value
200
1.60
Unit
mW
mW
625
°C /W
°C
JA
-55 to +150
TJ, TSTG
Notes:
1. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
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www.diodes.com
August 2008
© Diodes Incorporated
2N7002W
Document number: DS30099 Rev. 14 - 2
2N7002W
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Symbol Min
Typ
Max
Unit
Test Condition
VGS = 0V, ID = 10μA
60
⎯
⎯
70
⎯
⎯
V
BVDSS
IDSS
⎯
1.0
500
Zero Gate Voltage Drain Current
@ TC = 125°C
Gate-Body Leakage
@ TC
=
25°C
μA
nA
VDS = 60V, VGS = 0V
IGSS
±10
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
1.0
2.0
V
VGS(th)
⎯
1.8
2.6
VDS = VGS, ID = 250μA
VGS = 5.0V, ID = 0.05A
VGS = 10V, ID = 0.5A
VGS = 10V, VDS = 7.5V
VDS = 10V, ID = 0.2A
Static Drain-Source On-Resistance
@ Tj = 125°C
@ TJ = 25°C
7.5
13.5
RDS(ON)
⎯
Ω
On-State Drain Current
0.5
80
1.0
A
ID(ON)
gFS
⎯
⎯
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
mS
⎯
22
11
50
25
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
VDS = 25V, VGS = 0V
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
2.0
5.0
7.0
11
20
20
ns
ns
tD(ON)
⎯
⎯
VDD = 30V, ID = 0.2A,
RL = 150Ω, VGEN = 10V,
RGEN = 25Ω
Turn-Off Delay Time
tD(OFF)
Notes:
3. Short duration pulse test used to minimize self-heating effect.
1.0
7
6
0.8
0.6
0.4
0.2
0
5
4
3
2
1
0
0
1
2
4
5
3
0
0.2
0.4
ID, DRAIN CURRENT (A)
Fig. 2 On-Resistance vs. Drain Current
0.6
0.8
1.0
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
6
5
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
3
2
1
0
0
2
4
6
8
10 12 14 16 18
VGS, GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
-55 -30
TJ, JUNCTION TEMPERATURE (
Fig. 3 On-Resistance vs. Junction Temperature
20 45 70 95 120 145 170
-5
°C)
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www.diodes.com
August 2008
© Diodes Incorporated
2N7002W
Document number: DS30099 Rev. 14 - 2
2N7002W
Ordering Information (Notes 4)
Part Number
2N7002W-7-F
Case
SOT-323
Packaging
3000/Tape & Reel
Notes:
4. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K72 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
K72
M = Month ex: 9 = September
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004 2005
2006
2007
2008
2009
2010
2011
2012
Code
J
K
L
M
N
P
R
S
T
U
V
W
X
Y
Z
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
Package Outline Dimensions
A
SOT-323
Min
0.25
1.15
2.00
Dim
Max
0.40
1.35
2.20
A
B
C
D
F
G
H
J
C
B
TOP VIEW
0.65 Nominal
G
H
0.30
1.20
1.80
0.0
0.90
0.25
0.10
0°
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
K
J
M
K
L
M
L
F
D
α
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
X
Y
C
E
2.8
0.7
0.9
1.9
1.0
Z
C
X
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
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August 2008
© Diodes Incorporated
2N7002W
Document number: DS30099 Rev. 14 - 2
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